Dopant profiling in p-i-n GaN structures using secondary electrons

Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai; Liu, Hanxiao; Zhao, Yuji; Ponce, Fernando A.

doi:10.1063/1.5096273

Title: Dopant profiling in p-i-n GaN structures using secondary electrons

Authors:

^[1];

^[2];

^[1]; Zhao, Yuji ^[2];

^[1]

Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

Publication Date:: 2019-07-07

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1530635

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 1; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, and Ponce, Fernando A.. Dopant profiling in p-i-n GaN structures using secondary electrons.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5096273.

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                    Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, & Ponce, Fernando A.. Dopant profiling in p-i-n GaN structures using secondary electrons.  United States.  https://doi.org/10.1063/1.5096273

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                    Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, and Ponce, Fernando A.. Sun .  
"Dopant profiling in p-i-n GaN structures using secondary electrons".  United States.  https://doi.org/10.1063/1.5096273.

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@article{osti_1530635,

  title        = {Dopant profiling in p-i-n GaN structures using secondary electrons},

  author       = {Alugubelli, Shanthan R. and Fu, Houqiang and Fu, Kai and Liu, Hanxiao and Zhao, Yuji and Ponce, Fernando A.},

  abstractNote = {},

  doi          = {10.1063/1.5096273},

  journal      = {Journal of Applied Physics},

  number       = 1,

  volume       = 126,

  place        = {United States},

  year         = {2019},

  month        = {7}

}

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Works referenced in this record:

Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
journal, January 1998

Venables, D.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 1
DOI: 10.1116/1.589811

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers
journal, October 2017

Fu, Houqiang; Huang, Xuanqi; Chen, Hong
Applied Physics Letters, Vol. 111, Issue 15
DOI: 10.1063/1.4993201

Ion implantation doping and isolation of GaN
journal, September 1995

Pearton, S. J.; Vartuli, C. B.; Zolper, J. C.
Applied Physics Letters, Vol. 67, Issue 10
DOI: 10.1063/1.114518

GaN (0001)-(1×1) surfaces: Composition and electronic properties
journal, April 1998

Wu, C. I.; Kahn, A.; Taskar, N.
Journal of Applied Physics, Vol. 83, Issue 8
DOI: 10.1063/1.367182

Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM
journal, June 2004

Kazemian, P.
Microelectronic Engineering, Vol. 73-74
DOI: 10.1016/S0167-9317(04)00249-7

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
journal, February 2019

Liu, Hanxiao; Fu, Houqiang; Fu, Kai
Applied Physics Letters, Vol. 114, Issue 8
DOI: 10.1063/1.5088168

Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements
journal, January 2010

Volotsenko, I.; Molotskii, M.; Barkay, Z.
Journal of Applied Physics, Vol. 107, Issue 1
DOI: 10.1063/1.3276090

Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015

Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur
IEEE Transactions on Electron Devices, Vol. 62, Issue 2
DOI: 10.1109/TED.2014.2360861

The 2018 GaN power electronics roadmap
journal, March 2018

Amano, H.; Baines, Y.; Beam, E.
Journal of Physics D: Applied Physics, Vol. 51, Issue 16
DOI: 10.1088/1361-6463/aaaf9d

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination
journal, July 2018

Fu, Houqiang; Fu, Kai; Huang, Xuanqi
IEEE Electron Device Letters, Vol. 39, Issue 7
DOI: 10.1109/LED.2018.2837625

Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update
journal, January 2005

El-Gomati, M.; Zaggout, F.; Jayacody, H.
Surface and Interface Analysis, Vol. 37, Issue 11
DOI: 10.1002/sia.2108

Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
journal, August 2000

Chernyak, Leonid; Osinsky, Andrei; Fuflyigin, Vladimir
Applied Physics Letters, Vol. 77, Issue 6
DOI: 10.1063/1.1306910

Preparation and characterization of atomically clean, stoichiometric surfaces of n - and p -type GaN(0001)
journal, September 2003

Tracy, K. M.; Mecouch, W. J.; Davis, R. F.
Journal of Applied Physics, Vol. 94, Issue 5
DOI: 10.1063/1.1596369

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning
journal, March 2018

Chee, Augustus K. W.
Scientific Reports, Vol. 8, Issue 1
DOI: 10.1038/s41598-018-22909-2

Measuring the backscattering coefficient and secondary electron yield inside a scanning electron microscope
journal, January 1980

Reimer, L.; Tollkamp, C.
Scanning, Vol. 3, Issue 1
DOI: 10.1002/sca.4950030105

From the physics of secondary electron emission to image contrasts in scanning electron microscopy
journal, August 2012

Cazaux, J.
Journal of Electron Microscopy, Vol. 61, Issue 5
DOI: 10.1093/jmicro/dfs048

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer
journal, March 2017

Ji, Dong; Laurent, Matthew A.; Agarwal, Anchal
IEEE Transactions on Electron Devices, Vol. 64, Issue 3
DOI: 10.1109/TED.2016.2632150

Quantitative Dopant Profiling by Energy Filtering in the Scanning Electron Microscope
journal, June 2016

Chee, Augustus K. W.
IEEE Transactions on Device and Materials Reliability, Vol. 16, Issue 2
DOI: 10.1109/TDMR.2016.2531506

Evolution of the Electron Yield Curves of Insulators as a Function of Impinging Electron Fluence and Energy
journal, October 2006

Dennison, J. R.; Sim, A.; Thomson, C. D.
IEEE Transactions on Plasma Science, Vol. 34, Issue 5
DOI: 10.1109/TPS.2006.883398

Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition
journal, December 2018

Fu, Kai; Fu, Houqiang; Liu, Hanxiao
Applied Physics Letters, Vol. 113, Issue 23
DOI: 10.1063/1.5052479

Dopant profiling with the scanning electron microscope—A study of Si
journal, June 2002

Elliott, S. L.; Broom, R. F.; Humphreys, C. J.
Journal of Applied Physics, Vol. 91, Issue 11
DOI: 10.1063/1.1476968

Microscopic origins of surface states on nitride surfaces
journal, April 2007

Van de Walle, Chris G.; Segev, David
Journal of Applied Physics, Vol. 101, Issue 8
DOI: 10.1063/1.2722731

Secondary electron emission in the scanning electron microscope
journal, November 1983

Seiler, H.
Journal of Applied Physics, Vol. 54, Issue 11
DOI: 10.1063/1.332840

Mechanism for secondary electron dopant contrast in the SEM
journal, January 2000

Sealy, C. P.; Castell, M. R.; Wilshaw, P. R.
Journal of Electron Microscopy, Vol. 49, Issue 2
DOI: 10.1093/oxfordjournals.jmicro.a023811

Control of charging in low-voltage SEM
journal, January 1989

Joy, D. C.
Scanning, Vol. 11, Issue 1
DOI: 10.1002/sca.4950110102

Band bending and photoemission-induced surface photovoltages on clean n - and p -GaN (0001) surfaces
journal, September 2002

Long, J. P.; Bermudez, V. M.
Physical Review B, Vol. 66, Issue 12
DOI: 10.1103/PhysRevB.66.121308

Hole conductivity and compensation in epitaxial GaN:Mg layers
journal, October 2000

Kaufmann, U.; Schlotter, P.; Obloh, H.
Physical Review B, Vol. 62, Issue 16
DOI: 10.1103/PhysRevB.62.10867

Secondary electron emission from diamond surfaces
journal, August 1997

Shih, A.; Yater, J.; Pehrsson, P.
Journal of Applied Physics, Vol. 82, Issue 4
DOI: 10.1063/1.365990

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
journal, January 2018

Zhao, Yuji; Fu, Houqiang; Wang, George T.
Advances in Optics and Photonics, Vol. 10, Issue 1
DOI: 10.1364/AOP.10.000246

Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
journal, April 1995

Perovic, D. D.; Castell, M. R.; Howie, A.
Ultramicroscopy, Vol. 58, Issue 1
DOI: 10.1016/0304-3991(94)00183-N

Origin of secondary‐electron‐emission yield‐curve parameters
journal, August 1975

Dionne, Gerald F.
Journal of Applied Physics, Vol. 46, Issue 8
DOI: 10.1063/1.322061

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Title: Dopant profiling in p-i-n GaN structures using secondary electrons

Citation Formats

Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update journal, January 1998

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers journal, October 2017

Ion implantation doping and isolation of GaN journal, September 1995

GaN (0001)-(1×1) surfaces: Composition and electronic properties journal, April 1998

Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM journal, June 2004

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics journal, February 2019

Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements journal, January 2010

Vertical Power p-n Diodes Based on Bulk GaN journal, February 2015

The 2018 GaN power electronics roadmap journal, March 2018

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination journal, July 2018

Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update journal, January 2005

Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices journal, August 2000

Preparation and characterization of atomically clean, stoichiometric surfaces of n - and p -type GaN(0001) journal, September 2003

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning journal, March 2018

Measuring the backscattering coefficient and secondary electron yield inside a scanning electron microscope journal, January 1980

From the physics of secondary electron emission to image contrasts in scanning electron microscopy journal, August 2012

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer journal, March 2017

Quantitative Dopant Profiling by Energy Filtering in the Scanning Electron Microscope journal, June 2016

Evolution of the Electron Yield Curves of Insulators as a Function of Impinging Electron Fluence and Energy journal, October 2006

Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition journal, December 2018

Dopant profiling with the scanning electron microscope—A study of Si journal, June 2002

Microscopic origins of surface states on nitride surfaces journal, April 2007

Secondary electron emission in the scanning electron microscope journal, November 1983

Mechanism for secondary electron dopant contrast in the SEM journal, January 2000

Control of charging in low-voltage SEM journal, January 1989

Band bending and photoemission-induced surface photovoltages on clean n - and p -GaN (0001) surfaces journal, September 2002

Hole conductivity and compensation in epitaxial GaN:Mg layers journal, October 2000

Secondary electron emission from diamond surfaces journal, August 1997

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes journal, January 2018

Field-emission SEM imaging of compositional and doping layer semiconductor superlattices journal, April 1995

Origin of secondary‐electron‐emission yield‐curve parameters journal, August 1975

Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
journal, January 1998

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers
journal, October 2017

Ion implantation doping and isolation of GaN
journal, September 1995

GaN (0001)-(1×1) surfaces: Composition and electronic properties
journal, April 1998

Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM
journal, June 2004

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
journal, February 2019

Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements
journal, January 2010

Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015

The 2018 GaN power electronics roadmap
journal, March 2018

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination
journal, July 2018

Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update
journal, January 2005

Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
journal, August 2000

Preparation and characterization of atomically clean, stoichiometric surfaces of n - and p -type GaN(0001)
journal, September 2003

Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning
journal, March 2018

Measuring the backscattering coefficient and secondary electron yield inside a scanning electron microscope
journal, January 1980

From the physics of secondary electron emission to image contrasts in scanning electron microscopy
journal, August 2012

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journal, March 2017

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journal, June 2016

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journal, October 2006

Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition
journal, December 2018

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journal, June 2002

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journal, April 2007

Secondary electron emission in the scanning electron microscope
journal, November 1983

Mechanism for secondary electron dopant contrast in the SEM
journal, January 2000

Control of charging in low-voltage SEM
journal, January 1989

Band bending and photoemission-induced surface photovoltages on clean n - and p -GaN (0001) surfaces
journal, September 2002

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journal, October 2000

Secondary electron emission from diamond surfaces
journal, August 1997

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
journal, January 2018

Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
journal, April 1995

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journal, August 1975