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Title: Dopant profiling in p-i-n GaN structures using secondary electrons

Journal Article · · Journal of Applied Physics
DOI: https://doi.org/10.1063/1.5096273 · OSTI ID:1530635

Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI ID:
1530635
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 126 Journal Issue: 1; ISSN 0021-8979
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

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