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Title: Dopant profiling in p-i-n GaN structures using secondary electrons

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1];  [2]; ORCiD logo [1]
  1. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
  2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1530635
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 1; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, and Ponce, Fernando A. Dopant profiling in p-i-n GaN structures using secondary electrons. United States: N. p., 2019. Web. doi:10.1063/1.5096273.
Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, & Ponce, Fernando A. Dopant profiling in p-i-n GaN structures using secondary electrons. United States. doi:10.1063/1.5096273.
Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, and Ponce, Fernando A. Sun . "Dopant profiling in p-i-n GaN structures using secondary electrons". United States. doi:10.1063/1.5096273.
@article{osti_1530635,
title = {Dopant profiling in p-i-n GaN structures using secondary electrons},
author = {Alugubelli, Shanthan R. and Fu, Houqiang and Fu, Kai and Liu, Hanxiao and Zhao, Yuji and Ponce, Fernando A.},
abstractNote = {},
doi = {10.1063/1.5096273},
journal = {Journal of Applied Physics},
number = 1,
volume = 126,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
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This content will become publicly available on July 2, 2020
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