Dopant profiling in p-i-n GaN structures using secondary electrons
Journal Article
·
· Journal of Applied Physics
- Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI ID:
- 1530635
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 126 Journal Issue: 1; ISSN 0021-8979
- Publisher:
- American Institute of PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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