Dopant profiling in p-i-n GaN structures using secondary electrons

Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai; Liu, Hanxiao; Zhao, Yuji; Ponce, Fernando A.

doi:10.1063/1.5096273

Title: Dopant profiling in p-i-n GaN structures using secondary electrons

Journal Article · 07 July 2019 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5096273 · OSTI ID:1530635

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^[1]; Zhao, Yuji ^[2];

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Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1530635

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 126 Journal Issue: 1; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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