Dopant profiling in p-i-n GaN structures using secondary electrons
- Authors:
-
- Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
- Publication Date:
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1530635
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 1; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, and Ponce, Fernando A.. Dopant profiling in p-i-n GaN structures using secondary electrons. United States: N. p., 2019.
Web. doi:10.1063/1.5096273.
Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, & Ponce, Fernando A.. Dopant profiling in p-i-n GaN structures using secondary electrons. United States. https://doi.org/10.1063/1.5096273
Alugubelli, Shanthan R., Fu, Houqiang, Fu, Kai, Liu, Hanxiao, Zhao, Yuji, and Ponce, Fernando A.. Sun .
"Dopant profiling in p-i-n GaN structures using secondary electrons". United States. https://doi.org/10.1063/1.5096273.
@article{osti_1530635,
title = {Dopant profiling in p-i-n GaN structures using secondary electrons},
author = {Alugubelli, Shanthan R. and Fu, Houqiang and Fu, Kai and Liu, Hanxiao and Zhao, Yuji and Ponce, Fernando A.},
abstractNote = {},
doi = {10.1063/1.5096273},
journal = {Journal of Applied Physics},
number = 1,
volume = 126,
place = {United States},
year = {2019},
month = {7}
}
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https://doi.org/10.1063/1.5096273
https://doi.org/10.1063/1.5096273
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Cited by: 13 works
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