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Title: Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [1]
  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1530634
Grant/Contract Number:  
DEAR0000470
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 1; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Clinton, Evan A., Vadiee, Ehsan, Tellekamp, M. Brooks, and Doolittle, W. Alan. Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy. United States: N. p., 2019. Web. doi:10.1063/1.5097557.
Clinton, Evan A., Vadiee, Ehsan, Tellekamp, M. Brooks, & Doolittle, W. Alan. Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy. United States. doi:10.1063/1.5097557.
Clinton, Evan A., Vadiee, Ehsan, Tellekamp, M. Brooks, and Doolittle, W. Alan. Sun . "Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy". United States. doi:10.1063/1.5097557.
@article{osti_1530634,
title = {Observation and mitigation of RF-plasma-induced damage to III-nitrides grown by molecular beam epitaxy},
author = {Clinton, Evan A. and Vadiee, Ehsan and Tellekamp, M. Brooks and Doolittle, W. Alan},
abstractNote = {},
doi = {10.1063/1.5097557},
journal = {Journal of Applied Physics},
number = 1,
volume = 126,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
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This content will become publicly available on July 2, 2020
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