DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices

Journal Article · · Advanced Materials Interfaces
ORCiD logo [1];  [2];  [3];  [4];  [5];  [5];  [1];  [3];  [1]
  1. Electrical and Computer Engineering University of Utah 50 S. Central Campus Dr., MEB Rm 2110 Salt Lake City UT 84112 USA
  2. Idaho National Laboratory Nuclear Materials Department 2525 Fremont Avenue Idaho Falls ID 83415 USA
  3. Electrical and Computer Engineering Purdue University Birck Nanotechnology Center Room 2270, 1205 West State Street West Lafayette IN 47906 USA
  4. Department of Chemistry University of Utah 36 S. Wasatch Drive, SMBB Room 2515 Salt Lake City UT 84112 USA
  5. Electrical Engineering University of South Florida Mail Point: ENB118, 4202 East Fowler Ave Tampa FL 33620 USA

Abstract Leading photovoltaic technologies such as multicrystalline Si, CdTe, Cu(In,Ga)Se 2 , and lead halide perovskites are polycrystalline, yet achieve relatively high performance. At the moment polycrystalline photovoltaic technologies stand at a juncture where further advances in device performance and reliability necessitate additional characterization and modeling to include nanoscale property variations. Properties and implications of grain boundaries are previously studied, yet chemistry variations along individual grain boundaries and its implications are not yet fully explored. Here, the effects of bromine etching of CdTe absorber layers on the nanoscale chemistry are reported. Bromine etching is commonly used for improving CdTe back contacts, yet it removes both cadmium and chlorine along grain boundaries to depths closer to 1 µm. 2D device simulations reveal these composition modifications limit photovoltaic performance. Since grain boundaries and their intersections with surfaces and interfaces are universal to thin film photovoltaics, these findings call for similar studies in each of the photovoltaic technologies to further enable advances.

Sponsoring Organization:
USDOE
Grant/Contract Number:
EE0004946
OSTI ID:
1530474
Journal Information:
Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 16 Vol. 6; ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

References (31)

Recrystallization and sulfur diffusion in CdCl2-treated CdTe/CdS thin films journal July 1997
Understanding the Beneficial Role of Grain Boundaries in Polycrystalline Solar Cells from Single-Grain-Boundary Scanning Probe Microscopy journal March 2006
Direct Imaging of Cl- and Cu-Induced Short-Circuit Efficiency Changes in CdTe Solar Cells journal May 2014
Solar cell efficiency tables (version 49): Solar cell efficiency tables (version 49) journal November 2016
The Transmission Electron Microscope book January 1996
Chemical Interaction of CdTe and CdZnTe with Aqueous Solutions of H2O2-HI-Tartaric Acid journal April 2009
Chemical etching of crystal and thin film cadmium telluride journal December 1986
Development of efficient and stable back contacts on CdTe/CdS solar cells journal May 2001
Structural and chemical interface characterization of CdTe solar cells by transmission electron microscopy journal May 2003
Polycrystalline CdTe photovoltaics with efficiency over 18% through improved absorber passivation and current collection journal March 2018
Phase control of CuxTe film and its effects on CdS/CdTe solar cell journal May 2007
Direct Observation of CdCl 2 Treatment Induced Grain Boundary Carrier Depletion in CdTe Solar Cells Using Scanning Probe Microwave Reflectivity Based Capacitance Measurements journal March 2016
CdTe solar cells with open-circuit voltage breaking the 1 V barrier journal February 2016
Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17% journal May 2016
Effects of surface treatments on Schottky barrier formation at metal/ n ‐type CdTe contacts journal January 1989
Interdiffusion of CdS/CdTe thin films: Modeling x-ray diffraction line profiles journal January 2001
Passivation of double-positioning twin boundaries in CdTe journal July 2004
Grain-boundary recombination in Cu(In,Ga)Se2 solar cells journal December 2005
CdCl2 treatment, S diffusion, and recombination in polycrystalline CdTe journal May 2006
Study on polished and etched surfaces of polar (111) CdTe by x‐ray photoelectron spectroscopy and grazing‐incidence x‐ray diffraction journal May 1992
Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe journal November 2016
The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells journal June 2017
Study of CdTe etching process in alcoholic solutions of bromine journal August 1998
Grain-Boundary-Enhanced Carrier Collection in CdTe Solar Cells journal April 2014
Status and Potential of CdTe Solar-Cell Efficiency journal July 2015
Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm 2 Short-Circuit Current journal January 2018
Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution journal August 2015
Assessing the Validity and Accuracy of Effective Electronic Materials: Can 1D Simulations Predict Polycrystalline Device Performance? conference June 2017
Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells journal April 1980
Study of cleaved, oxidized, etched, and heat‐treated CdTe surfaces
  • Häring, J. ‐P.; Werthen, J. G.; Bube, R. H.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 1, Issue 3 https://doi.org/10.1116/1.572170
journal July 1983
Bromine-Methanol Etching of Cadmium Telluride in a Rotating Disk Reactor journal January 1990