Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices
- Electrical and Computer Engineering University of Utah 50 S. Central Campus Dr., MEB Rm 2110 Salt Lake City UT 84112 USA
- Idaho National Laboratory Nuclear Materials Department 2525 Fremont Avenue Idaho Falls ID 83415 USA
- Electrical and Computer Engineering Purdue University Birck Nanotechnology Center Room 2270, 1205 West State Street West Lafayette IN 47906 USA
- Department of Chemistry University of Utah 36 S. Wasatch Drive, SMBB Room 2515 Salt Lake City UT 84112 USA
- Electrical Engineering University of South Florida Mail Point: ENB118, 4202 East Fowler Ave Tampa FL 33620 USA
Abstract Leading photovoltaic technologies such as multicrystalline Si, CdTe, Cu(In,Ga)Se 2 , and lead halide perovskites are polycrystalline, yet achieve relatively high performance. At the moment polycrystalline photovoltaic technologies stand at a juncture where further advances in device performance and reliability necessitate additional characterization and modeling to include nanoscale property variations. Properties and implications of grain boundaries are previously studied, yet chemistry variations along individual grain boundaries and its implications are not yet fully explored. Here, the effects of bromine etching of CdTe absorber layers on the nanoscale chemistry are reported. Bromine etching is commonly used for improving CdTe back contacts, yet it removes both cadmium and chlorine along grain boundaries to depths closer to 1 µm. 2D device simulations reveal these composition modifications limit photovoltaic performance. Since grain boundaries and their intersections with surfaces and interfaces are universal to thin film photovoltaics, these findings call for similar studies in each of the photovoltaic technologies to further enable advances.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- EE0004946
- OSTI ID:
- 1530474
- Journal Information:
- Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 16 Vol. 6; ISSN 2196-7350
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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