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Title: Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [4]; ORCiD logo [5];  [5];  [5]; ORCiD logo [6]; ORCiD logo [5]
  1. Department of Materials Science and Engineering, Rutgers, The State University of New Jersey, Piscataway NJ 08854 USA
  2. James Franck Institute and Kadanoff Center for Theoretical Physics, University of Chicago, IL 60637 USA
  3. Department of Applied Physics, Stanford University, Stanford CA 94305 USA, Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park CA 94025 USA
  4. Condensed Matter Physics and Materials Science, Brookhaven National Lab, Upton NY 11973 USA
  5. Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway NJ 08854 USA
  6. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park CA 94025 USA, Department of Physics, Stanford University, Stanford CA 94305 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1530473
Grant/Contract Number:  
AC02−98CH10886; AC02-76SF00515
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung-Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber-Gordon, David, and Oh, Seongshik. Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level. Germany: N. p., 2019. Web. doi:10.1002/adma.201901091.
Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung-Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber-Gordon, David, & Oh, Seongshik. Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level. Germany. doi:10.1002/adma.201901091.
Salehi, Maryam, Shapourian, Hassan, Rosen, Ilan Thomas, Han, Myung-Geun, Moon, Jisoo, Shibayev, Pavel, Jain, Deepti, Goldhaber-Gordon, David, and Oh, Seongshik. Mon . "Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level". Germany. doi:10.1002/adma.201901091.
@article{osti_1530473,
title = {Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level},
author = {Salehi, Maryam and Shapourian, Hassan and Rosen, Ilan Thomas and Han, Myung-Geun and Moon, Jisoo and Shibayev, Pavel and Jain, Deepti and Goldhaber-Gordon, David and Oh, Seongshik},
abstractNote = {},
doi = {10.1002/adma.201901091},
journal = {Advanced Materials},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {7}
}

Journal Article:
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This content will become publicly available on June 30, 2020
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Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010


Topological Insulator Materials
journal, October 2013

  • Ando, Yoichi
  • Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001
  • DOI: 10.7566/JPSJ.82.102001