Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G.

doi:10.1063/1.5018343

Title: Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c² dark matter

Journal Article · 21 March 2018 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5018343 · OSTI ID:1530346

^[1];

^[1]; Hanrahan, S. ^[1]; Bizarri, G. ^[2]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Cranfield Univ. (United Kingdom)

This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c² mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm), and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c².

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530346

Alternate ID(s):: OSTI ID: 1427316

Journal Information:: Journal of Applied Physics, Vol. 123, Issue 11; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (45)

Detectability of Light Dark Matter with Superfluid Helium Schutz, Katelin; Zurek, Kathryn M. Physical Review Letters, Vol. 117, Issue 12 https://doi.org/10.1103/PhysRevLett.117.121302	journal	September 2016
Light dark matter: Models and constraints Knapen, Simon; Lin, Tongyan; Zurek, Kathryn M. Physical Review D, Vol. 96, Issue 11 https://doi.org/10.1103/PhysRevD.96.115021	journal	December 2017
Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center Williams, E. W. Physical Review, Vol. 168, Issue 3 https://doi.org/10.1103/PhysRev.168.922	journal	April 1968
Results from the Super Cryogenic Dark Matter Search Experiment at Soudan Agnese, R.; Aramaki, T.; Arnquist, I. J. Physical Review Letters, Vol. 120, Issue 6 https://doi.org/10.1103/PhysRevLett.120.061802	journal	February 2018
Conductivity of n -type GaAs near the Mott transition Benzaquen, M.; Walsh, D.; Mazuruk, K. Physical Review B, Vol. 36, Issue 9 https://doi.org/10.1103/PhysRevB.36.4748	journal	September 1987
STUDY OF THE MOTT TRANSITION IN n-TYPE CdS BY SPIN FLIP RAMAN SCATTERING AND SPIN FARADAY ROTATION Geschwind, S.; Romestain, R.; Devlin, G. E. Le Journal de Physique Colloques, Vol. 37, Issue C4 https://doi.org/10.1051/jphyscol:1976455	journal	October 1976
Direct detection of sub-GeV dark matter with scintillating targets Derenzo, Stephen; Essig, Rouven; Massari, Andrea Physical Review D, Vol. 96, Issue 1 https://doi.org/10.1103/PhysRevD.96.016026	journal	July 2017
Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals Kretzer, U.; Börner, F.; Bünger, T. Physica B: Condensed Matter, Vol. 401-402 https://doi.org/10.1016/j.physb.2007.08.158	journal	December 2007
Wide-angle and broadband graded-refractive-index antireflection coatings Zhang, Jun-Chao; Xiong, Li-Min; Fang, Ming Chinese Physics B, Vol. 22, Issue 4 https://doi.org/10.1088/1674-1056/22/4/044201	journal	April 2013
On Thermoluminescence in Conductive Semiconductors Opanowicz, A. physica status solidi (a), Vol. 93, Issue 1 https://doi.org/10.1002/pssa.2210930166	journal	January 1986
A measurement of the light yield of common inorganic scintillators Holl, I.; Lorenz, E.; Mageras, G. IEEE Transactions on Nuclear Science, Vol. 35, Issue 1 https://doi.org/10.1109/23.12684	journal	February 1988
The incorporation and characterisation of acceptors in epitaxial GaAs Ashen, D. J.; Dean, P. J.; Hurle, D. T. J. Journal of Physics and Chemistry of Solids, Vol. 36, Issue 10 https://doi.org/10.1016/0022-3697(75)90043-8	journal	October 1975
Superconducting Transition Edge Sensors for Quantum Optics Gerrits, Thomas; Lita, Adriana; Calkins, Brice Quantum Science and Technology https://doi.org/10.1007/978-3-319-24091-6_2	book	January 2016
Identification of the 0.95 eV luminescence band in n-type GaAs:Si Lei, H.; Leipner, H. S.; Bondarenko, V. Journal of Physics: Condensed Matter, Vol. 16, Issue 2 https://doi.org/10.1088/0953-8984/16/2/033	journal	December 2003
Results from a search for dark matter in the complete LUX exposure Akerib, D. S.; Alsum, S.; Araújo, H. M. arXiv https://doi.org/10.48550/arxiv.1608.07648	text	January 2016
Cerium-doped lutetium oxyorthosilicate: a fast, efficient new scintillator Melcher, C. L.; Schweitzer, J. S. IEEE Transactions on Nuclear Science, Vol. 39, Issue 4 https://doi.org/10.1109/23.159655	journal	January 1992
Cerium-doped lutetium oxyorthosilicate: a fast, efficient new scintillator Melcher, C. L.; Schweitzer, J. S. Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference https://doi.org/10.1109/nssmic.1991.258886	conference	January 1991
Light Dark Matter: Models and Constraints Knapen, Simon; Lin, Tongyan; Zurek, Kathryn M. arXiv https://doi.org/10.48550/arxiv.1709.07882	text	January 2017
Results from a Search for Dark Matter in the Complete LUX Exposure Akerib, D. S.; Alsum, S.; Araújo, H. M. Physical Review Letters, Vol. 118, Issue 2 https://doi.org/10.1103/PhysRevLett.118.021303	journal	January 2017
Direct detection of sub-GeV dark matter with semiconductor targets Essig, Rouven; Fernández-Serra, Marivi; Mardon, Jeremy Journal of High Energy Physics, Vol. 2016, Issue 5 https://doi.org/10.1007/JHEP05(2016)046	journal	May 2016
Thermoluminescence in conductive n-type ZnSe crystals Oczkowski, H. L. Physica Status Solidi (a), Vol. 68, Issue 1 https://doi.org/10.1002/pssa.2210680127	journal	November 1981
Direct detection of sub-GeV dark matter Essig, Rouven; Mardon, Jeremy; Volansky, Tomer Physical Review D, Vol. 85, Issue 7 https://doi.org/10.1103/PhysRevD.85.076007	journal	April 2012
Electronic structure observed by magnetic resonance Jerome, D.; Ryter, C.; Schulz, H. J. Philosophical Magazine B, Vol. 52, Issue 3 https://doi.org/10.1080/13642818508240611	journal	September 1985
First Direct Detection Limits on Sub-GeV Dark Matter from XENON10 Essig, Rouven; Manalaysay, Aaron; Mardon, Jeremy Physical Review Letters, Vol. 109, Issue 2 https://doi.org/10.1103/PhysRevLett.109.021301	journal	July 2012
XENON100 dark matter results from a combination of 477 live days Aprile, E.; Aalbers, J.; Agostini, F. Physical Review D, Vol. 94, Issue 12 https://doi.org/10.1103/PhysRevD.94.122001	journal	December 2016
First Dark Matter Search Results from the XENON1T Experiment Aprile, E.; Aalbers, J.; Agostini, F. Physical Review Letters, Vol. 119, Issue 18 https://doi.org/10.1103/PhysRevLett.119.181301	journal	October 2017
Boron-Silicon complex defects in GaAs: An ab initio study Leitsmann, R.; Chicker, F.; Plänitz, Ph. Journal of Applied Physics, Vol. 109, Issue 6 https://doi.org/10.1063/1.3561373	journal	March 2011
Semiconductor-to-Metal Transition in n -Type Group IV Semiconductors Alexander, Michael N.; Holcomb, Donald F. Reviews of Modern Physics, Vol. 40, Issue 4 https://doi.org/10.1103/RevModPhys.40.815	journal	October 1968
Dark Matter Detection Using Helium Evaporation and Field Ionization Maris, Humphrey J.; Seidel, George M.; Stein, Derek Physical Review Letters, Vol. 119, Issue 18 https://doi.org/10.1103/PhysRevLett.119.181303	journal	November 2017
Radiative recombination from GaAs directly excited by electron beams Cusano, D. A. Solid State Communications, Vol. 2, Issue 11 https://doi.org/10.1016/0038-1098(64)90259-5	journal	November 1964
XENON100 Dark Matter Results from a Combination of 477 Live Days Collaboration, Xenon100; Aprile, E.; Aalbers, J. American Physical Society https://doi.org/10.5167/uzh-129741	text	January 2016
Results on light dark matter particles with a low-threshold CRESST-II detector Angloher, G.; Bento, A.; Bucci, C. The European Physical Journal C, Vol. 76, Issue 1 https://doi.org/10.1140/epjc/s10052-016-3877-3	journal	January 2016
First Direct Detection Limits on sub-GeV Dark Matter from XENON10 Essig, Rouven; Manalaysay, Aaron; Mardon, Jeremy arXiv https://doi.org/10.48550/arxiv.1206.2644	text	January 2012
Refractive index, n , and dispersion, − d n / d λ, of GaAs at 2 K determined from Fabry–Perot cavity oscillations Reynolds, D. C.; Bajaj, K. K.; Litton, C. W. Journal of Applied Physics, Vol. 61, Issue 1 https://doi.org/10.1063/1.338828	journal	January 1987
Cerium-doped lutetium oxyorthosilicate: a fast, efficient new scintillator Melcher, C. L.; Schweitzer, J. S. PET in Clinical Oncology https://doi.org/10.1007/978-3-642-57703-1_8	book	January 2000
Light Dark Matter in Superfluid Helium: Detection with Multi-excitation Production Knapen, Simon; Lin, Tongyan; Zurek, Kathryn M. arXiv https://doi.org/10.48550/arxiv.1611.06228	text	January 2016
Dark Matter Detection Using Helium Evaporation and Field Ionization Maris, Humphrey J.; Seidel, George M.; Stein, Derek arXiv https://doi.org/10.48550/arxiv.1706.00117	text	January 2017
On Thermoluminescence in Conductive Semiconductors Opanowicz, A. physica status solidi (a), Vol. 93, Issue 1 https://doi.org/10.1002/pssa.2210930166	journal	January 1986
Light dark matter in superfluid helium: Detection with multi-excitation production Knapen, Simon; Lin, Tongyan; Zurek, Kathryn M. Physical Review D, Vol. 95, Issue 5 https://doi.org/10.1103/PhysRevD.95.056019	journal	March 2017
First Direct Detection Limits on sub-GeV Dark Matter from XENON10 Essig, Rouven; Manalaysay, Aaron; Mardon, Jeremy arXiv https://doi.org/10.48550/arxiv.1206.2644	text	January 2012
A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs Auret, F. D.; Leitch, A. W. R.; Vermaak, J. S. Journal of Applied Physics, Vol. 59, Issue 1 https://doi.org/10.1063/1.336854	journal	January 1986
Final model independent results of DAMA/LIBRA-phase1 and perspectives of phase2 Bernabei, R.; Belli, P.; Cappella, F. Physics of Particles and Nuclei, Vol. 46, Issue 2 https://doi.org/10.1134/S1063779615020045	journal	March 2015
Observation of boron‐related photoluminescence in GaAs layers grown by molecular beam epitaxy Brierley, Steven K.; Hendriks, Henry T.; Hoke, William E. Applied Physics Letters, Vol. 63, Issue 6 https://doi.org/10.1063/1.109916	journal	August 1993
First dark matter search results from the XENON1T experiment Collaboration, Xenon; Baudis, Laura; Brown, Adam American Physical Society https://doi.org/10.5167/uzh-148800	text	January 2017
High quality factor platinum silicide microwave kinetic inductance detectors Szypryt, P.; Mazin, B. A.; Ulbricht, G. Applied Physics Letters, Vol. 109, Issue 15 https://doi.org/10.1063/1.4964665	journal	October 2016

Cited By (1)

Low temperature scintillation properties of Ga ₂ O ₃ Mykhaylyk, V. B.; Kraus, H.; Kapustianyk, V. Applied Physics Letters, Vol. 115, Issue 8 https://doi.org/10.1063/1.5119130	journal	August 2019

Figures / Tables (11)

Similar Records

How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs

Journal Article · 2020 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:1826702

Derenzo, S.; Bourret, E.; Frank-Rotsch, C.; +2 more

A study of the photodissociation physics of methyl bromide on gallium arsenide(110)

Thesis/Dissertation · 1992 · OSTI ID:7044145

Schwarz, W N

Direct detection of sub-GeV dark matter with scintillating targets

Journal Article · 2017 · Physical Review D · OSTI ID:1430683

Derenzo, Stephen; Essig, Rouven; Massari, Andrea; +2 more

Related Subjects

36 MATERIALS SCIENCE

Title: Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

Citation Formats