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Title: Ultrahigh thermal conductivity of isotopically enriched silicon

Abstract

Most of the stable elements possess two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably robust isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ( T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm -1K -1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart natSi with the natural isotopic constitution. For highly enriched crystal 28Si and crystal natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity wasmore » determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (~80 K). The κ( T) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.« less

Authors:
ORCiD logo [1];  [1]; ORCiD logo [2];  [2];  [3]; ORCiD logo [3];  [4];  [5]
  1. National Research Centre (NRC), Moscow (Russian Federation). Kurchatov Inst. (NRCKI)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  3. Leibniz-Institut für Kristallzüchtung, Berlin (Germany)
  4. VITCON Projectconsult GmbH, Jena (Germany)
  5. Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Russian Foundation for Basic Research; USDOE
OSTI Identifier:
1530344
Alternate Identifier(s):
OSTI ID: 1423925
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 9; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, and Becker, Peter. Ultrahigh thermal conductivity of isotopically enriched silicon. United States: N. p., 2018. Web. doi:10.1063/1.5017778.
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, & Becker, Peter. Ultrahigh thermal conductivity of isotopically enriched silicon. United States. doi:10.1063/1.5017778.
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, and Becker, Peter. Tue . "Ultrahigh thermal conductivity of isotopically enriched silicon". United States. doi:10.1063/1.5017778. https://www.osti.gov/servlets/purl/1530344.
@article{osti_1530344,
title = {Ultrahigh thermal conductivity of isotopically enriched silicon},
author = {Inyushkin, Alexander V. and Taldenkov, Alexander N. and Ager, Joel W. and Haller, Eugene E. and Riemann, Helge and Abrosimov, Nikolay V. and Pohl, Hans-Joachim and Becker, Peter},
abstractNote = {Most of the stable elements possess two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably robust isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ(T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm-1K-1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart natSi with the natural isotopic constitution. For highly enriched crystal 28Si and crystal natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (~80 K). The κ(T) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.},
doi = {10.1063/1.5017778},
journal = {Journal of Applied Physics},
number = 9,
volume = 123,
place = {United States},
year = {2018},
month = {3}
}

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Works referenced in this record:

Thermal conductivity of isotopically enriched 28Si: revisited
journal, August 2004

  • Kremer, R. K.; Graf, K.; Cardona, M.
  • Solid State Communications, Vol. 131, Issue 8, p. 499-503
  • DOI: 10.1016/j.ssc.2004.06.022