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Title: Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode

Abstract

Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W-1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.

Authors:
 [1];  [2];  [2];  [2];  [2];  [3];  [3]; ORCiD logo [4];  [3]; ORCiD logo [4]
  1. Fudan Univ., Shanghai (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Fudan Univ., Shanghai (China)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NNSFC); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1530330
Alternate Identifier(s):
OSTI ID: 1413039; OSTI ID: 1579797
Grant/Contract Number:  
AC02-05CH11231; EE0004946; AC02‐76SF00515; AC02-76SF00515; 51471051; 11674061
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi rrl
Additional Journal Information:
Journal Volume: 12; Journal Issue: 2; Journal ID: ISSN 1862-6254
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CuS; photodetectors; photodiodes; transparent conducting materials; transparent electronics; ZnS

Citation Formats

Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, and Ager, Joel W. Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode. United States: N. p., 2017. Web. doi:10.1002/pssr.201700381.
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, & Ager, Joel W. Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode. United States. doi:10.1002/pssr.201700381.
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, and Ager, Joel W. Tue . "Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode". United States. doi:10.1002/pssr.201700381. https://www.osti.gov/servlets/purl/1530330.
@article{osti_1530330,
title = {Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode},
author = {Xu, Xiaojie and Shukla, Sudhanshu and Liu, Ya and Yue, Binbin and Bullock, James and Su, Longxing and Li, Yanmei and Javey, Ali and Fang, Xiaosheng and Ager, Joel W.},
abstractNote = {Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W-1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.},
doi = {10.1002/pssr.201700381},
journal = {Physica Status Solidi rrl},
number = 2,
volume = 12,
place = {United States},
year = {2017},
month = {12}
}

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