Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode
Abstract
Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W-1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.
- Authors:
-
[4];
[4]
- Fudan Univ., Shanghai (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Fudan Univ., Shanghai (China)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NNSFC); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1530330
- Alternate Identifier(s):
- OSTI ID: 1413039; OSTI ID: 1579797
- Grant/Contract Number:
- AC02-05CH11231; EE0004946; AC02‐76SF00515; AC02-76SF00515; 51471051; 11674061
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physica Status Solidi rrl
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 2; Journal ID: ISSN 1862-6254
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CuS; photodetectors; photodiodes; transparent conducting materials; transparent electronics; ZnS
Citation Formats
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, and Ager, Joel W. Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode. United States: N. p., 2017.
Web. doi:10.1002/pssr.201700381.
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, & Ager, Joel W. Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode. United States. doi:10.1002/pssr.201700381.
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, and Ager, Joel W. Tue .
"Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode". United States. doi:10.1002/pssr.201700381. https://www.osti.gov/servlets/purl/1530330.
@article{osti_1530330,
title = {Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode},
author = {Xu, Xiaojie and Shukla, Sudhanshu and Liu, Ya and Yue, Binbin and Bullock, James and Su, Longxing and Li, Yanmei and Javey, Ali and Fang, Xiaosheng and Ager, Joel W.},
abstractNote = {Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W-1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.},
doi = {10.1002/pssr.201700381},
journal = {Physica Status Solidi rrl},
number = 2,
volume = 12,
place = {United States},
year = {2017},
month = {12}
}
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