skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode

Abstract

Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. Furthermore, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W -1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices discussed in the literature.

Authors:
 [1];  [2];  [2];  [2];  [2];  [3];  [3]; ORCiD logo [4];  [3]; ORCiD logo [4]
  1. Fudan Univ., Shanghai (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Fudan Univ., Shanghai (China)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NNSFC); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1530330
Alternate Identifier(s):
OSTI ID: 1413039
Grant/Contract Number:  
AC02-05CH11231; EE0004946; AC02‐76SF00515; AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi rrl
Additional Journal Information:
Journal Volume: 12; Journal Issue: 2; Journal ID: ISSN 1862-6254
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CuS; photodetectors; photodiodes; transparent conducting materials; transparent electronics; ZnS

Citation Formats

Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, and Ager, Joel W. Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode. United States: N. p., 2017. Web. doi:10.1002/pssr.201700381.
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, & Ager, Joel W. Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode. United States. doi:10.1002/pssr.201700381.
Xu, Xiaojie, Shukla, Sudhanshu, Liu, Ya, Yue, Binbin, Bullock, James, Su, Longxing, Li, Yanmei, Javey, Ali, Fang, Xiaosheng, and Ager, Joel W. Tue . "Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode". United States. doi:10.1002/pssr.201700381. https://www.osti.gov/servlets/purl/1530330.
@article{osti_1530330,
title = {Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode},
author = {Xu, Xiaojie and Shukla, Sudhanshu and Liu, Ya and Yue, Binbin and Bullock, James and Su, Longxing and Li, Yanmei and Javey, Ali and Fang, Xiaosheng and Ager, Joel W.},
abstractNote = {Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. Furthermore, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W-1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices discussed in the literature.},
doi = {10.1002/pssr.201700381},
journal = {Physica Status Solidi rrl},
number = 2,
volume = 12,
place = {United States},
year = {2017},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 10 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO
journal, December 2003