Negative electronic compressibility and tunable spin splitting in WSe2

Riley, J. M.; Meevasana, W.; Bawden, L.; Asakawa, M.; Takayama, T.; Eknapakul, T.; Kim, T. K.; Hoesch, M.; Mo, S. -K.; Takagi, H.; Sasagawa, T.; Bahramy, M. S.; King, P. D.  C.

doi:10.1038/nnano.2015.217

Title: Negative electronic compressibility and tunable spin splitting in WSe₂

Journal Article · 21 September 2015 · Nature Nanotechnology

DOI: https://doi.org/10.1038/nnano.2015.217 · OSTI ID:1530213

Riley, J. M. ^[1]; Meevasana, W. ^[2]; Bawden, L. ^[3]; Asakawa, M. ^[4]; Takayama, T. ^[5]; Eknapakul, T. ^[2]; Kim, T. K. ^[6]; Hoesch, M. ^[6];

^[7]; Takagi, H. ^[5]; Sasagawa, T. ^[4]; Bahramy, M. S. ^[8];

^[3]

Univ. of St. Andrews, Scotland (United Kingdom); Diamond Light Source, Harwell Campus, Didcot (United Kingdom)
Suranaree University of Technology, Nakhon Ratchasima (Thailand)
Univ. of St. Andrews, Scotland (United Kingdom)
Tokyo Institute of Technology, Kanagawa (Japan)
Univ. of Tokyo (Japan); Max Planck Institute for Solid State Research, Stuttgart (Germany)
Diamond Light Source, Harwell Campus, Didcot (United Kingdom)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of Tokyo (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako (Japan)

We report that tunable bandgaps, extraordinarily large exciton-binding energies, strong light-matter coupling and a locking of the electron spin with layer and valley pseudospins have established transition-metal dichalcogenides (TMDs) as a unique class of two-dimensional (2D) semiconductors with wide-ranging practical applications. Using angle-resolved photoemission (ARPES), we show here that doping electrons at the surface of the prototypical strong spin-orbit TMD WSe₂, akin to applying a gate voltage in a transistor-type device, induces a counterintuitive lowering of the surface chemical potential concomitant with the formation of a multivalley 2D electron gas (2DEG). These measurements provide a direct spectroscopic signature of negative electronic compressibility (NEC), a result of electron-electron interactions, which we find persists to carrier densities approximately three orders of magnitude higher than in typical semiconductor 2DEGs that exhibit this effect. An accompanying tunable spin splitting of the valence bands further reveals a complex interplay between single-particle band-structure evolution and many-body interactions in electrostatically doped TMDs. Lastly, understanding and exploiting this will open up new opportunities for advanced electronic and quantum-logic devices.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530213

Journal Information:: Nature Nanotechnology, Vol. 10, Issue 12; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 76 works

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Title: Negative electronic compressibility and tunable spin splitting in WSe₂