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Title: Ionization-induced thermally activated defect-annealing process in SiC

Abstract

Ionizing events can lead to panoply of irradiation effects, and in silicon carbide (SiC), they drastically modify the defect production rate or the initial density. To better comprehend this phenomenon, 6H-SiC single crystals were first predamaged using low-velocity 100-keV Fe+ ions at three fluences in the range of 1014cm-2 to induce three different initial disorder levels peaking at values between ~0.8 and 1 (1 corresponding to full amorphization). Crystals were then submitted to swift heavy ion irradiation in the 1013cm-2 fluence range at both low (~100 K) and high (~770 K) temperature. Rutherford backscattering spectrometry in channeling conditions revealed that swift ions allow annealing part of the initial damage, the recovery efficiency increasing with the irradiation temperature and reaching 75% in initially severely disordered crystals. This temperature effect has been qualitatively predicted by molecular dynamics simulations. Transmission electron microscopy allowed imaging both the recovery and the difference in the microstructure of the layers irradiated at low or high temperature. Recovery cross sections are discovered to lie in the range of a few square nanometers, consistent with previously reported values. A scenario for a general, two-step annealing mechanism referred to as an ionization-activated, thermally assisted defect-annealing (IATADA) process is proposed. Thismore » mechanism rationalizes the diverse descriptions reported so far in the literature.« less

Authors:
 [1];  [1];  [2];  [1];  [3]; ORCiD logo [4]
  1. Univ. Paris-Sud, Orsay (France)
  2. Centre National de la Recherche Scientifique (CNRS), Caen (France)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1530075
Alternate Identifier(s):
OSTI ID: 1546362
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 6; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Debelle, Aurélien, Thomé, Lionel, Monnet, Isabelle, Garrido, Frédérico, Pakarinen, Olli H., and Weber, William J. Ionization-induced thermally activated defect-annealing process in SiC. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.063609.
Debelle, Aurélien, Thomé, Lionel, Monnet, Isabelle, Garrido, Frédérico, Pakarinen, Olli H., & Weber, William J. Ionization-induced thermally activated defect-annealing process in SiC. United States. doi:10.1103/PhysRevMaterials.3.063609.
Debelle, Aurélien, Thomé, Lionel, Monnet, Isabelle, Garrido, Frédérico, Pakarinen, Olli H., and Weber, William J. Thu . "Ionization-induced thermally activated defect-annealing process in SiC". United States. doi:10.1103/PhysRevMaterials.3.063609. https://www.osti.gov/servlets/purl/1530075.
@article{osti_1530075,
title = {Ionization-induced thermally activated defect-annealing process in SiC},
author = {Debelle, Aurélien and Thomé, Lionel and Monnet, Isabelle and Garrido, Frédérico and Pakarinen, Olli H. and Weber, William J.},
abstractNote = {Ionizing events can lead to panoply of irradiation effects, and in silicon carbide (SiC), they drastically modify the defect production rate or the initial density. To better comprehend this phenomenon, 6H-SiC single crystals were first predamaged using low-velocity 100-keV Fe+ ions at three fluences in the range of 1014cm-2 to induce three different initial disorder levels peaking at values between ~0.8 and 1 (1 corresponding to full amorphization). Crystals were then submitted to swift heavy ion irradiation in the 1013cm-2 fluence range at both low (~100 K) and high (~770 K) temperature. Rutherford backscattering spectrometry in channeling conditions revealed that swift ions allow annealing part of the initial damage, the recovery efficiency increasing with the irradiation temperature and reaching 75% in initially severely disordered crystals. This temperature effect has been qualitatively predicted by molecular dynamics simulations. Transmission electron microscopy allowed imaging both the recovery and the difference in the microstructure of the layers irradiated at low or high temperature. Recovery cross sections are discovered to lie in the range of a few square nanometers, consistent with previously reported values. A scenario for a general, two-step annealing mechanism referred to as an ionization-activated, thermally assisted defect-annealing (IATADA) process is proposed. This mechanism rationalizes the diverse descriptions reported so far in the literature.},
doi = {10.1103/PhysRevMaterials.3.063609},
journal = {Physical Review Materials},
number = 6,
volume = 3,
place = {United States},
year = {2019},
month = {6}
}

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Works referenced in this record:

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    Works referencing / citing this record:

    Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
    journal, December 2018


    Radiation effects on solid state diffusion
    journal, January 1975


    The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction
    journal, November 2017


    Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC
    journal, February 2013


    Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation
    journal, December 2017

    • Zhang, Yanwen; Xue, Haizhou; Zarkadoula, Eva
    • Current Opinion in Solid State and Materials Science, Vol. 21, Issue 6
    • DOI: 10.1016/j.cossms.2017.09.003

    Effect of electronic energy dissipation on strain relaxation in irradiated concentrated solid solution alloys
    journal, April 2019

    • Sellami, Neila; Debelle, Aurélien; Ullah, Mohammad W.
    • Current Opinion in Solid State and Materials Science, Vol. 23, Issue 2
    • DOI: 10.1016/j.cossms.2019.02.002

    Magnesium behavior and structural defects in Mg+ ion implanted silicon carbide
    journal, March 2015


    Dimensional isotropy of 6H and 3C SiC under neutron irradiation
    journal, April 2016


    Effect of coupled electronic and nuclear energy deposition on strain and stress levels in UO2
    journal, June 2019


    Modern analysis of ion channeling data by Monte Carlo simulations
    journal, October 2005

    • Nowicki, Lech; Turos, Andrzej; Ratajczak, Renata
    • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 240, Issue 1-2
    • DOI: 10.1016/j.nimb.2005.06.129

    Chemical short-range order in ion-beam-induced amorphous SiC: Irradiation temperature dependence
    journal, January 2006

    • Ishimaru, Manabu; Bae, In-Tae; Hirata, Akihiko
    • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 242, Issue 1-2
    • DOI: 10.1016/j.nimb.2005.08.066

    Swift heavy ion induced recrystallization in cubic silicon carbide: New insights from designed experiments and MD simulations
    journal, May 2014

    • Debelle, A.; Backman, M.; Thomé, L.
    • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 326
    • DOI: 10.1016/j.nimb.2013.10.080

    SCALP, a platform dedicated to material modifications and characterization under ion beam
    journal, September 2017

    • Bacri, C. -O.; Bachelet, C.; Baumier, C.
    • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 406
    • DOI: 10.1016/j.nimb.2017.03.036

    Annealing of preexisting defects in silicon single crystals by ion irradiation
    journal, July 2019

    • Mihai, M. D.; Ionescu, P.; Pantelica, D.
    • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 450
    • DOI: 10.1016/j.nimb.2018.09.005

    Ionization-induced annealing of pre-existing defects in silicon carbide
    journal, August 2015

    • Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.
    • Nature Communications, Vol. 6, Issue 1
    • DOI: 10.1038/ncomms9049

    Single spins in silicon carbide
    journal, December 2014


    Improving atomic displacement and replacement calculations with physically realistic damage models
    journal, March 2018


    Heavy ion ranges from first-principles electron dynamics
    journal, April 2019

    • Sand, Andrea E.; Ullah, Rafi; Correa, Alfredo A.
    • npj Computational Materials, Vol. 5, Issue 1
    • DOI: 10.1038/s41524-019-0180-5

    Understanding and simulating the material behavior during multi-particle irradiations
    journal, July 2016

    • Mir, Anamul H.; Toulemonde, M.; Jegou, C.
    • Scientific Reports, Vol. 6, Issue 1
    • DOI: 10.1038/srep30191

    Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
    journal, February 2005

    • Slotte, J.; Saarinen, K.; Janson, M. S.
    • Journal of Applied Physics, Vol. 97, Issue 3
    • DOI: 10.1063/1.1844618

    Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide
    journal, December 2006

    • Benyagoub, A.; Audren, A.; Thomé, L.
    • Applied Physics Letters, Vol. 89, Issue 24
    • DOI: 10.1063/1.2405410

    Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation
    journal, November 2014

    • Guo, Daxi; Martin-Bragado, Ignacio; He, Chaohui
    • Journal of Applied Physics, Vol. 116, Issue 20
    • DOI: 10.1063/1.4902145

    Recovery effects due to the interaction between nuclear and electronic energy losses in SiC irradiated with a dual-ion beam
    journal, March 2015

    • Thomé, Lionel; Velisa, Gihan; Miro, Sandrine
    • Journal of Applied Physics, Vol. 117, Issue 10
    • DOI: 10.1063/1.4914305

    Investigating the effect of material microstructure and irradiation temperature on the radiation tolerance of yttria stabilized zirconia against high energy heavy ions
    journal, March 2019

    • Kalita, Parswajit; Ghosh, Santanu; Singh, Udai B.
    • Journal of Applied Physics, Vol. 125, Issue 11
    • DOI: 10.1063/1.5080934

    Molecular dynamics investigations of surface damage produced by kiloelectronvolt self-bombardment of solids
    journal, April 1999


    Synergistic effects of nuclear and electronic energy deposition on damage production in KTaO 3
    journal, July 2018


    Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
    journal, October 2010


    Optical spectroscopy study of damage induced in 4H-SiC by swift heavy ion irradiation
    journal, February 2012


    Silicon Carbide as a Platform for Power Electronics
    journal, June 2009


    Synergy between electronic and nuclear energy losses for color center creation in AlN
    journal, April 2013