Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications

Zhang, Zeyu; Jung, Daehwan; Norman, Justin C.; Chow, Weng W.; Bowers, John E.

doi:10.1109/JSTQE.2019.2916884

Title: Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications

Full Record
Other Related Research

Authors:

; Jung, Daehwan;

; Chow, Weng W.;

Publication Date:: Fri Nov 01 00:00:00 EDT 2019

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1529745

Alternate Identifier(s):: OSTI ID: 1529746

Grant/Contract Number:: AR000067; AC04-94AL85000

Resource Type:: Published Article

Journal Name:: IEEE Journal of Selected Topics in Quantum Electronics

Additional Journal Information:: Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Journal Volume: 25 Journal Issue: 6; Journal ID: ISSN 1077-260X

Publisher:: Institute of Electrical and Electronics Engineers

Country of Publication:: United States

Language:: English

Citation Formats


                    Zhang, Zeyu, Jung, Daehwan, Norman, Justin C., Chow, Weng W., and Bowers, John E. Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications.  United States: N. p., 2019. 
Web.  doi:10.1109/JSTQE.2019.2916884.

Copy to clipboard


                    Zhang, Zeyu, Jung, Daehwan, Norman, Justin C., Chow, Weng W., & Bowers, John E. Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications.  United States.  https://doi.org/10.1109/JSTQE.2019.2916884

Copy to clipboard


                    Zhang, Zeyu, Jung, Daehwan, Norman, Justin C., Chow, Weng W., and Bowers, John E. Fri .  
"Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications".  United States.  https://doi.org/10.1109/JSTQE.2019.2916884.

Copy to clipboard


                    
@article{osti_1529745,

  title        = {Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications},

  author       = {Zhang, Zeyu and Jung, Daehwan and Norman, Justin C. and Chow, Weng W. and Bowers, John E.},

  abstractNote = {},

  doi          = {10.1109/JSTQE.2019.2916884},

  journal      = {IEEE Journal of Selected Topics in Quantum Electronics},

  number       = 6,

  volume       = 25,

  place        = {United States},

  year         = {Fri Nov 01 00:00:00 EDT 2019},

  month        = {Fri Nov 01 00:00:00 EDT 2019}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Publisher's Version of Record
https://doi.org/10.1109/JSTQE.2019.2916884

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 32 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Spectral dispersion of the linewidth enhancement factor and four wave mixing conversion efficiency of an InAs/GaAs multimode quantum dot laser

Journal Article Ding, Shihao ; Dong, Bozhang ; Huang, Heming ; ... - Applied Physics Letters

The spectral dependence of the linewidth enhancement factor (αH-factor) of a multimode InAs/GaAs quantum dot laser is analyzed. Amplified spontaneous and high-frequency modulation methods are used to experimentally retrieve the αH-factor of each longitudinal mode below and above the threshold. A dispersion of the αH-factor is unlocked across the entire optical spectrum, which is further illustrated in the context of four wave mixing experiments. The results show that the induced conversion efficiency is increased at lasing wavelengths where the linewidth enhancement is lower. These results highlight the importance of carefully monitoring the linewidth enhancement factor in quantum dot lasers especiallymore »« less
https://doi.org/10.1063/5.0077221
On quantum-dot lasing at gain peak with linewidth enhancement factor $$α$$_H = 0

Journal Article Chow, Weng W. ; Zhang, Zeyu ; Norman, Justin C. ; ... - APL Photonics

This paper describes an investigation of the linewidth enhancement factor α_H in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing α_H. In particular, the feasibility of lasing at the gain peak with α_H = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.
Cited by 15
https://doi.org/10.1063/1.5133075

Full Text Available
Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

Journal Article Duan, J. ; Huang, H. ; Jung, D. ; ... - Applied Physics Letters

This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
Cited by 52
https://doi.org/10.1063/1.5025879
Clamping of the Linewidth Enhancement Factor in Narrow Quantum-Well GRINSCH Semiconductor Lasers

Journal Article Bossert, D ; Chow, W W ; Hader, J ; ... - Applied Physics Letters

The linewidth enhancement factor in single quantum-well GRINSCH semiconductor lasers is investigated theoretically and experimentally. For thin wells a small linewidth enhancement factor is obtained which clamps with increasing carrier density, in contrast to the monotonous increase observed for thicker wells. Microscopic many-body calculations reproduce the experimental observations attributing the clamping to a subtle interplay between excitation dependent gain shifts and carrier population distributions.
Full Text Available
Determining the linewidth enhancement factor via optical feedback in quantum dot micropillar lasers

Journal Article Holzinger, Steffen ; Kreinberg, Sören ; Hokr, Brett H. ; ... - Optics Express
Cited by 4
https://doi.org/10.1364/OE.26.031363

Similar Records