High-gain leaky surface acoustic wave amplifier in epitaxial InGaAs on lithium niobate heterostructure
Abstract
Active surface acoustic wave components have the potential to transform RF front ends by consolidating functionalities that currently occur across multiple chip technologies, leading to reduced insertion loss from converting back and forth between acoustic and electronic domains in addition to improved size and power efficiency. This letter reflects a significant advance in these active devices with a compact, high-gain, and low-power leaky surface acoustic wave amplifier based on the acoustoelectric effect. Devices use an acoustically thin semi-insulating InGaAs surface film on a YX lithium niobate substrate to achieve exceptionally high acoustoelectric interaction strength via an epitaxial In0.53Ga0.47As(P)/InP quaternary layer structure and wafer-scale bonding. Here, we demonstrate 1.9 dB of gain per acoustic wavelength and power consumption of 90 mW for 30 dB of electronic gain. Despite the strong intrinsic leaky propagation loss, 5 dB of terminal gain is obtained for a semiconductor that is only 338 μm long due to state-of-the-art heterogenous integration and an improved material platform.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1529154
- Alternate Identifier(s):
- OSTI ID: 1529412
- Report Number(s):
- SAND-2019-4833J
Journal ID: ISSN 0003-6951; 675132
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 25; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Hackett, L., Siddiqui, A., Dominguez, D., Douglas, J. K., Tauke-Pedretti, A., Friedmann, T., Peake, G., Arterburn, S., and Eichenfield, M. High-gain leaky surface acoustic wave amplifier in epitaxial InGaAs on lithium niobate heterostructure. United States: N. p., 2019.
Web. doi:10.1063/1.5108724.
Hackett, L., Siddiqui, A., Dominguez, D., Douglas, J. K., Tauke-Pedretti, A., Friedmann, T., Peake, G., Arterburn, S., & Eichenfield, M. High-gain leaky surface acoustic wave amplifier in epitaxial InGaAs on lithium niobate heterostructure. United States. https://doi.org/10.1063/1.5108724
Hackett, L., Siddiqui, A., Dominguez, D., Douglas, J. K., Tauke-Pedretti, A., Friedmann, T., Peake, G., Arterburn, S., and Eichenfield, M. Tue .
"High-gain leaky surface acoustic wave amplifier in epitaxial InGaAs on lithium niobate heterostructure". United States. https://doi.org/10.1063/1.5108724. https://www.osti.gov/servlets/purl/1529154.
@article{osti_1529154,
title = {High-gain leaky surface acoustic wave amplifier in epitaxial InGaAs on lithium niobate heterostructure},
author = {Hackett, L. and Siddiqui, A. and Dominguez, D. and Douglas, J. K. and Tauke-Pedretti, A. and Friedmann, T. and Peake, G. and Arterburn, S. and Eichenfield, M.},
abstractNote = {Active surface acoustic wave components have the potential to transform RF front ends by consolidating functionalities that currently occur across multiple chip technologies, leading to reduced insertion loss from converting back and forth between acoustic and electronic domains in addition to improved size and power efficiency. This letter reflects a significant advance in these active devices with a compact, high-gain, and low-power leaky surface acoustic wave amplifier based on the acoustoelectric effect. Devices use an acoustically thin semi-insulating InGaAs surface film on a YX lithium niobate substrate to achieve exceptionally high acoustoelectric interaction strength via an epitaxial In0.53Ga0.47As(P)/InP quaternary layer structure and wafer-scale bonding. Here, we demonstrate 1.9 dB of gain per acoustic wavelength and power consumption of 90 mW for 30 dB of electronic gain. Despite the strong intrinsic leaky propagation loss, 5 dB of terminal gain is obtained for a semiconductor that is only 338 μm long due to state-of-the-art heterogenous integration and an improved material platform.},
doi = {10.1063/1.5108724},
journal = {Applied Physics Letters},
number = 25,
volume = 114,
place = {United States},
year = {2019},
month = {6}
}
Web of Science
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