Optical and electrical properties of two-dimensional palladium diselenide
Abstract
Two-dimensional (2D) noble-metal dichalcogenides exhibit exceptionally strong thickness-dependent bandgaps, which can be leveraged in a wide variety of device applications. A detailed study of their optical (e.g., optical bandgaps) and electrical properties (e.g., mobilities) is important in determining potential future applications of these materials. Here, we perform detailed optical and electrical characterization of 2D PdSe2 nanoflakes mechanically exfoliated from a single-crystalline source. Layer-dependent bandgap analysis from optical absorption results indicates that this material is an indirect semiconductor with bandgaps of approximately 1.37 and 0.50 eV for the monolayer and bulk, respectively. Spectral photoresponse measurements further confirm these bandgap values. Moreover, temperature-dependent electrical measurements of a 6.8-nm-thick PdSe2 flake-based transistor show effective electron mobilities of 130 and 520 cm2 V–1 s–1 at 300 K and 77 K, respectively. Finally, we demonstrate that PdSe2 can be utilized for short-wave infrared photodetectors. A room-temperature specific detectivity (D*) of 1.8 × 1010 cm Hz1/2 W–1 at 1 μm with a band edge at 1.94 μm is achieved on a 6.8-nm-thick PdSe2 flake-based photodetector.
- Authors:
-
[1];
[1];
[1];
[1];
[3];
[4];
[1]
- Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Nanyang Technological Univ. (Singapore). Center for Programmable Materials, School of Materials Science and Engineering
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
- Nanyang Technological Univ. (Singapore). Center for Programmable Materials, School of Materials Science and Engineering; City Univ. of Hong Kong (Hong Kong). Dept. of Chemistry
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Defense Advanced Research Projects Agency (DARPA)
- OSTI Identifier:
- 1638989
- Alternate Identifier(s):
- OSTI ID: 1529042
- Grant/Contract Number:
- AC02-05CH11231; HR0011-16-1-0004
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 25; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; infrared photodetector; electrical characterization; electronic transport; electrical properties and parameters; optical absorption; transistors; band gap; semiconductors; electric measurements; transition metals
Citation Formats
Zhang, George, Amani, Matin, Chaturvedi, Apoorva, Tan, Chaoliang, Bullock, James, Song, Xiaohui, Kim, Hyungjin, Lien, Der-Hsien, Scott, Mary C., Zhang, Hua, and Javey, Ali. Optical and electrical properties of two-dimensional palladium diselenide. United States: N. p., 2019.
Web. doi:10.1063/1.5097825.
Zhang, George, Amani, Matin, Chaturvedi, Apoorva, Tan, Chaoliang, Bullock, James, Song, Xiaohui, Kim, Hyungjin, Lien, Der-Hsien, Scott, Mary C., Zhang, Hua, & Javey, Ali. Optical and electrical properties of two-dimensional palladium diselenide. United States. https://doi.org/10.1063/1.5097825
Zhang, George, Amani, Matin, Chaturvedi, Apoorva, Tan, Chaoliang, Bullock, James, Song, Xiaohui, Kim, Hyungjin, Lien, Der-Hsien, Scott, Mary C., Zhang, Hua, and Javey, Ali. Mon .
"Optical and electrical properties of two-dimensional palladium diselenide". United States. https://doi.org/10.1063/1.5097825. https://www.osti.gov/servlets/purl/1638989.
@article{osti_1638989,
title = {Optical and electrical properties of two-dimensional palladium diselenide},
author = {Zhang, George and Amani, Matin and Chaturvedi, Apoorva and Tan, Chaoliang and Bullock, James and Song, Xiaohui and Kim, Hyungjin and Lien, Der-Hsien and Scott, Mary C. and Zhang, Hua and Javey, Ali},
abstractNote = {Two-dimensional (2D) noble-metal dichalcogenides exhibit exceptionally strong thickness-dependent bandgaps, which can be leveraged in a wide variety of device applications. A detailed study of their optical (e.g., optical bandgaps) and electrical properties (e.g., mobilities) is important in determining potential future applications of these materials. Here, we perform detailed optical and electrical characterization of 2D PdSe2 nanoflakes mechanically exfoliated from a single-crystalline source. Layer-dependent bandgap analysis from optical absorption results indicates that this material is an indirect semiconductor with bandgaps of approximately 1.37 and 0.50 eV for the monolayer and bulk, respectively. Spectral photoresponse measurements further confirm these bandgap values. Moreover, temperature-dependent electrical measurements of a 6.8-nm-thick PdSe2 flake-based transistor show effective electron mobilities of 130 and 520 cm2 V–1 s–1 at 300 K and 77 K, respectively. Finally, we demonstrate that PdSe2 can be utilized for short-wave infrared photodetectors. A room-temperature specific detectivity (D*) of 1.8 × 1010 cm Hz1/2 W–1 at 1 μm with a band edge at 1.94 μm is achieved on a 6.8-nm-thick PdSe2 flake-based photodetector.},
doi = {10.1063/1.5097825},
journal = {Applied Physics Letters},
number = 25,
volume = 114,
place = {United States},
year = {Mon Jun 24 00:00:00 EDT 2019},
month = {Mon Jun 24 00:00:00 EDT 2019}
}
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Works referencing / citing this record:
Photoresponse of wafer-scale palladium diselenide films prepared by selenization method
journal, December 2019
- Mak, Chun Hin; Lin, Shenghuang; Rogée, Lukas
- Journal of Physics D: Applied Physics, Vol. 53, Issue 6