14.1% CsPbI 3 Perovskite Quantum Dot Solar Cells via Cesium Cation Passivation

Ling, Xufeng; Zhou, Sijie; Yuan, Jianyu; Shi, Junwei; Qian, Yuli; Larson, Bryon W.; Zhao, Qian; Qin, Chaochao; Li, Fangchao; Shi, Guozheng; Stewart, Connor; Hu, Jiaxin; Zhang, Xuliang; Luther, Joseph M.; Duhm, Steffen; Ma, Wanli

doi:10.1002/aenm.201900721

Title: 14.1% CsPbI ₃ Perovskite Quantum Dot Solar Cells via Cesium Cation Passivation

Journal Article · 23 June 2019 · Advanced Energy Materials

DOI: https://doi.org/10.1002/aenm.201900721 · OSTI ID:1529017

Ling, Xufeng ^[1]; Zhou, Sijie ^[1]; Yuan, Jianyu ^[1]; Shi, Junwei ^[1]; Qian, Yuli ^[1]; Larson, Bryon W. ^[2]; Zhao, Qian ^[2]; Qin, Chaochao ^[3]; Li, Fangchao ^[1]; Shi, Guozheng ^[1]; Stewart, Connor ^[4]; Hu, Jiaxin ^[1]; Zhang, Xuliang ^[1]; Luther, Joseph M. ^[2]; Duhm, Steffen ^[1];

^[1]

Institute of Functional Nano &, Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Joint International Research Laboratory of Carbon‐Based Functional Materials and Devices Soochow University 199 Ren‐Ai Road, Suzhou Industrial Park Suzhou Jiangsu 215123 P. R. China
Chemistry &, Nanoscience Center National Renewable Energy Laboratory Golden CO 80401 USA
College of Physics and Materials Science Henan Normal University Xinxiang Henan 453007 P. R. China
Department of Chemistry University of Western Ontario London Ontario N6A 5B7 Canada

Abstract Surface manipulation of quantum dots (QDs) has been extensively reported to be crucial to their performance when applied into optoelectronic devices, especially for photovoltaic devices. In this work, an efficient surface passivation method for emerging CsPbI ₃ perovskite QDs using a variety of inorganic cesium salts (cesium acetate (CsAc), cesium idodide (CsI), cesium carbonate (Cs ₂ CO ₃ ), and cesium nitrate (CsNO ₃ )) is reported. The Cs‐salts post‐treatment can not only fill the vacancy at the CsPbI ₃ perovskite surface but also improve electron coupling between CsPbI ₃ QDs. As a result, the free carrier lifetime, diffusion length, and mobility of QD film are simultaneously improved, which are beneficial for fabricating high‐quality conductive QD films for efficient solar cell devices. After optimizing the post‐treatment process, the short‐circuit current density and fill factor are significantly enhanced, delivering an impressive efficiency of 14.10% for CsPbI ₃ QD solar cells. In addition, the Cs‐salt‐treated CsPbI ₃ QD devices exhibit improved stability against moisture due to the improved surface environment of these QDs. These findings will provide insight into the design of high‐performance and low‐trap‐states perovskite QD films with desirable optoelectronic properties.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC36‐08GO28308

OSTI ID:: 1529017

Journal Information:: Advanced Energy Materials, Journal Name: Advanced Energy Materials Vol. 9 Journal Issue: 28; ISSN 1614-6832

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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