Title: Ferroelectricity‐Enhanced Piezo‐Phototronic Effect in 2D V‐Doped ZnO Nanosheets

Abstract

Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo-phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p-Si/V-doped-ferroelectric-ZnO 2D nanosheets (FESZ-PD) is fabricated, and the ferroelectricity-enhanced piezo-phototronic effect on the photoresponse behavior of the FESZ-PD is carefully investigated. By introducing the ferroelectricity and the piezo-phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo-phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain-free conditions, the photoresponsivity R of the FESZ-PD increases by 2.4 times when applying a -0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo-phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high-performance electronic and optoelectronic devices.

Authors:

Dai, Yejing  ^[1];

• Search DOE PAGES for author "Dai, Yejing"
• Search DOE PAGES for ORCID "0000-0003-3538-2224"

Wu, Changsheng ^[2]; Wu, Zhiyi ^[2]; Zhao, Zhihao ^[3]; Li, Li ^[4]; Lu, Yang ^[4]; Wang, Zhong Lin  ^[5]

• Search DOE PAGES for author "Wang, Zhong Lin"
• Search DOE PAGES for ORCID "0000-0002-5530-0380"

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+ Show Author Affiliations

1. School of MaterialsSun Yat‐sen University Guangzhou 510275 China, School of Materials Science and EngineeringGeorgia Institute of Technology Atlanta GA 30332‐0245 USA, Key Laboratory of Advanced Ceramics and Machining TechnologyMinistry of EducationSchool of Materials Science and EngineeringTianjin University Tianjin 300072 China
2. School of Materials Science and EngineeringGeorgia Institute of Technology Atlanta GA 30332‐0245 USA
3. School of MaterialsSun Yat‐sen University Guangzhou 510275 China, Key Laboratory of Advanced Ceramics and Machining TechnologyMinistry of EducationSchool of Materials Science and EngineeringTianjin University Tianjin 300072 China
4. Key Laboratory of Advanced Ceramics and Machining TechnologyMinistry of EducationSchool of Materials Science and EngineeringTianjin University Tianjin 300072 China
5. School of Materials Science and EngineeringGeorgia Institute of Technology Atlanta GA 30332‐0245 USA, Beijing Institute of Nanoenergy and NanosystemsChinese Academy of Sciences Beijing 100083 China

Publication Date:

Sat Jun 22 00:00:00 EDT 2019

Research Org.:

Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Org.:

USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:

1529012

Alternate Identifier(s):

OSTI ID: 1529013; OSTI ID: 1609848

Grant/Contract Number:  

FG02‐07ER46394; FG02-07ER46394

Resource Type:

Published Article

Journal Name:

Advanced Science

Additional Journal Information:

Journal Name: Advanced Science Journal Volume: 6 Journal Issue: 16; Journal ID: ISSN 2198-3844

Publisher:

Wiley

Country of Publication:

Germany

Language:

English

Subject:

36 MATERIALS SCIENCE; Chemistry; Science & Technology - Other Topics; Materials Science; coupling effect; ferroelectricity; photodetectors; piezo‐phototronic effect; ZnO nanosheets