Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures

doi:10.1063/1.5087956

Title: Probing the band alignment in rectifying SrIrO₃/Nb:SrTiO₃ heterostructures

Abstract

Here, we have examined the band alignment in SrIrO₃/Nb:SrTiO₃ (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

Authors:

Kim, B. S. Y. ^[1]; Birkhölzer, Y. A. ^[2]; Feng, X. ^[1]; Hikita, Y. ^[3]; Hwang, H. Y. ^[4]

Stanford Univ., Stanford, CA (United States)
Stanford Univ., Stanford, CA (United States); Univ. of Twente (The Netherlands)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Publication Date:: 2019-04-04

Research Org.:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1528890

Alternate Identifier(s):: OSTI ID: 1505009

Grant/Contract Number:: ECCS-1542152; AC02-76SF00515; GBMF4415

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 114; Journal Issue: 13; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats


                    Kim, B. S. Y., Birkhölzer, Y. A., Feng, X., Hikita, Y., and Hwang, H. Y. Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures.  United States: N. p., 2019. 
        Web.  doi:10.1063/1.5087956.

Copy to clipboard


                    Kim, B. S. Y., Birkhölzer, Y. A., Feng, X., Hikita, Y., & Hwang, H. Y. Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures.  United States.  doi:10.1063/1.5087956.

Copy to clipboard


                    Kim, B. S. Y., Birkhölzer, Y. A., Feng, X., Hikita, Y., and Hwang, H. Y. Thu .  
        "Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures".  United States.  doi:10.1063/1.5087956.  https://www.osti.gov/servlets/purl/1528890.

Copy to clipboard


                    
@article{osti_1528890,

  title        = {Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures},

  author       = {Kim, B. S. Y. and Birkhölzer, Y. A. and Feng, X. and Hikita, Y. and Hwang, H. Y.},

  abstractNote = {Here, we have examined the band alignment in SrIrO3/Nb:SrTiO3 (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.},

  doi          = {10.1063/1.5087956},

  journal      = {Applied Physics Letters},

  number       = 13,

  volume       = 114,

  place        = {United States},

  year         = {2019},

  month        = {4}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

DOI: 10.1063/1.5087956

Other availability

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Interplay of Spin-Orbit Interactions, Dimensionality, and Octahedral Rotations in Semimetallic ${SrIrO}_{3}$
journal, January 2015

Nie, Y. F.; King, P. D. C.; Kim, C. H.
Physical Review Letters, Vol. 114, Issue 1
DOI: 10.1103/PhysRevLett.114.016401

Electron Tunneling and Band Structure of SrTi $O_{3}$ and KTa $O_{3}$
journal, October 1970

Sroubek, Z.
Physical Review B, Vol. 2, Issue 8
DOI: 10.1103/PhysRevB.2.3170

Characterization of the Schottky barrier in SrRuO3∕Nb:SrTiO3 junctions
journal, April 2007

Hikita, Y.; Kozuka, Y.; Susaki, T.
Applied Physics Letters, Vol. 90, Issue 14
DOI: 10.1063/1.2719157

Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces
journal, July 2004

Ohnishi, T.; Shibuya, K.; Lippmaa, M.
Applied Physics Letters, Vol. 85, Issue 2
DOI: 10.1063/1.1771461

Electronic transport in doped ${SrTiO}_{3}$ : Conduction mechanisms and potential applications
journal, April 2010

Spinelli, A.; Torija, M. A.; Liu, C.
Physical Review B, Vol. 81, Issue 15
DOI: 10.1103/PhysRevB.81.155110

Band Alignment and Charge Transfer in Complex Oxide Interfaces
journal, March 2017

Zhong, Zhicheng; Hansmann, Philipp
Physical Review X, Vol. 7, Issue 1
DOI: 10.1103/PhysRevX.7.011023

Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures
journal, November 2018

Wang, Lingfei; Feng, Qiyuan; Kim, Yoonkoo
Nature Materials, Vol. 17, Issue 12
DOI: 10.1038/s41563-018-0204-4

Thermodynamic guiding principles in selective synthesis of strontium iridate Ruddlesden-Popper epitaxial films
journal, March 2016

Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki
APL Materials, Vol. 4, Issue 3
DOI: 10.1063/1.4943519

Engineering a Spin-Orbital Magnetic Insulator by Tailoring Superlattices
journal, June 2015

Matsuno, J.; Ihara, K.; Yamamura, S.
Physical Review Letters, Vol. 114, Issue 24
DOI: 10.1103/PhysRevLett.114.247209

Balanced electron-hole transport in spin-orbit semimetal ${SrIrO}_{3}$ heterostructures
journal, February 2018

Manca, Nicola; Groenendijk, Dirk J.; Pallecchi, Ilaria
Physical Review B, Vol. 97, Issue 8
DOI: 10.1103/PhysRevB.97.081105

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
journal, July 2013

Han, Wei; Jiang, Xin; Kajdos, Adam
Nature Communications, Vol. 4, Issue 1
DOI: 10.1038/ncomms3134

Atomically engineered epitaxial anatase TiO ₂ metal-semiconductor field-effect transistors
journal, March 2018

Kim, Brian S. Y.; Minohara, Makoto; Hikita, Yasuyuki
Applied Physics Letters, Vol. 112, Issue 13
DOI: 10.1063/1.5024418

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
journal, February 1999

Robertson, J.; Chen, C. W.
Applied Physics Letters, Vol. 74, Issue 8
DOI: 10.1063/1.123476

Metal insulator transitions in perovskite SrIrO ₃ thin films
journal, December 2014

Biswas, Abhijit; Kim, Ki-Seok; Jeong, Yoon Hee
Journal of Applied Physics, Vol. 116, Issue 21
DOI: 10.1063/1.4903314

A highly active and stable IrO _x /SrIrO ₃ catalyst for the oxygen evolution reaction
journal, September 2016

Seitz, Linsey C.; Dickens, Colin F.; Nishio, Kazunori
Science, Vol. 353, Issue 6303
DOI: 10.1126/science.aaf5050

The capacitance of degenerate‐semiconductor Schottky barriers at low temperatures
journal, March 1980

Stoeckly, Beth
Applied Physics Letters, Vol. 36, Issue 5
DOI: 10.1063/1.91496

Why some interfaces cannot be sharp
journal, January 2006

Nakagawa, Naoyuki; Hwang, Harold Y.; Muller, David A.
Nature Materials, Vol. 5, Issue 3, p. 204-209
DOI: 10.1038/nmat1569

Compressive strain-induced metal–insulator transition in orthorhombic SrIrO ₃ thin films
journal, October 2014

Gruenewald, John H.; Nichols, John; Terzic, Jasminka
Journal of Materials Research, Vol. 29, Issue 21
DOI: 10.1557/jmr.2014.288

Electron doping of cuprates via interfaces with manganites
journal, August 2007

Yunoki, S.; Moreo, A.; Dagotto, E.
Physical Review B, Vol. 76, Issue 6
DOI: 10.1103/PhysRevB.76.064532

The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures
journal, July 1931

Fowler, R. H.
Physical Review, Vol. 38, Issue 1, p. 45-56
DOI: 10.1103/PhysRev.38.45

Recent advances in Schottky barrier concepts
journal, November 2001

Tung, Raymond T.
Materials Science and Engineering: R: Reports, Vol. 35, Issue 1-3
DOI: 10.1016/S0927-796X(01)00037-7

SrTi $O_{3}$ : An intrinsic quantum paraelectric below 4 K
journal, April 1979

Müller, K. A.; Burkard, H.
Physical Review B, Vol. 19, Issue 7
DOI: 10.1103/PhysRevB.19.3593

Charge Transfer in Iridate-Manganite Superlattices
journal, March 2017

Okamoto, Satoshi; Nichols, John; Sohn, Changhee
Nano Letters, Vol. 17, Issue 4
DOI: 10.1021/acs.nanolett.6b04107

Emerging magnetism and anomalous Hall effect in iridate–manganite heterostructures
journal, September 2016

Nichols, John; Gao, Xiang; Lee, Shinbuhm
Nature Communications, Vol. 7, Issue 1
DOI: 10.1038/ncomms12721

Understanding and Controlling the Work Function of Perovskite Oxides Using Density Functional Theory
journal, May 2016

Jacobs, Ryan; Booske, John; Morgan, Dane
Advanced Functional Materials, Vol. 26, Issue 30
DOI: 10.1002/adfm.201600243

Relativistic $G W$ +BSE study of the optical properties of Ruddlesden-Popper iridates
journal, July 2018

Liu, Peitao; Kim, Bongjae; Chen, Xing-Qiu
Physical Review Materials, Vol. 2, Issue 7
DOI: 10.1103/PhysRevMaterials.2.075003

Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled ${SrIrO}_{3}$
journal, December 2017

Schütz, P.; Di Sante, D.; Dudy, L.
Physical Review Letters, Vol. 119, Issue 25
DOI: 10.1103/PhysRevLett.119.256404

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions
journal, June 2014

Mikheev, Evgeny; Hoskins, Brian D.; Strukov, Dmitri B.
Nature Communications, Vol. 5, Issue 1
DOI: 10.1038/ncomms4990

Spin-Orbit Semimetal ${SrIrO}_{3}$ in the Two-Dimensional Limit
journal, December 2017

Groenendijk, D. J.; Autieri, C.; Girovsky, J.
Physical Review Letters, Vol. 119, Issue 25
DOI: 10.1103/PhysRevLett.119.256403

Activation of ultrathin SrTiO ₃ with subsurface SrRuO ₃ for the oxygen evolution reaction
journal, January 2018

Akbashev, A. R.; Zhang, L.; Mefford, J. T.
Energy & Environmental Science, Vol. 11, Issue 7
DOI: 10.1039/C8EE00210J

Bulk electronic structure of SrTiO3: Experiment and theory
journal, December 2001

van Benthem, K.; Elsässer, C.; French, R. H.
Journal of Applied Physics, Vol. 90, Issue 12
DOI: 10.1063/1.1415766

Interface-driven topological Hall effect in SrRuO ₃ -SrIrO ₃ bilayer
journal, July 2016

Matsuno, Jobu; Ogawa, Naoki; Yasuda, Kenji
Science Advances, Vol. 2, Issue 7
DOI: 10.1126/sciadv.1600304

Epitaxial growth and thermodynamic stability of SrIrO ₃ /SrTiO ₃ heterostructures
journal, July 2016

Groenendijk, D. J.; Manca, N.; Mattoni, G.
Applied Physics Letters, Vol. 109, Issue 4
DOI: 10.1063/1.4960101

Electrical transport across Au/Nb:SrTiO ₃ Schottky interface with different Nb doping
journal, May 2012

Rana, K. G.; Khikhlovskyi, V.; Banerjee, T.
Applied Physics Letters, Vol. 100, Issue 21
DOI: 10.1063/1.4720516

Fundamental Transition in the Electronic Nature of Solids
journal, June 1969

Kurtin, S.; McGill, T. C.; Mead, C. A.
Physical Review Letters, Vol. 22, Issue 26
DOI: 10.1103/PhysRevLett.22.1433

Interface band profiles of $Mott-insulator / Nb : {SrTiO}_{3}$ heterojunctions as investigated by optical spectroscopy
journal, November 2010

Nakamura, Masao; Sawa, Akihito; Fujioka, Jun
Physical Review B, Vol. 82, Issue 20
DOI: 10.1103/PhysRevB.82.201101

Similar Records in DOE PAGES and OSTI.GOV collections:

Inhomogeneous barrier heights at dipole-controlled SrRuO₃/Nb:SrTiO₃ Schottky junctions

Journal Article Yajima, T. ; Minohara, M. ; Bell, C. ; ... - Applied Physics Letters

It has recently been shown that the Schottky barrier height (SBH) formed at metal-semiconductor perovskite oxide heterojunctions can be dramatically tuned by the insertion of atomic-scale dipole layers at the interface. However, in idealized form, this would only allow for specific values of the SBH, discretized by the dipole layer thickness. We examine the effect of fractional unit cell LaAlO₃ dipoles inserted between SrRuO₃ and Nb:SrTiO₃ in (001) Schottky junctions, as a function of their in-plane lateral distribution. When the LaAlO₃ dipoles are finely dispersed, we observe uniformly rectifying junctions, with SBHs reflecting the fractional LaAlO₃ coverage. For larger length-scalemore »« less
Cited by 2
DOI: 10.1063/1.5052712

Full Text Available
Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

Journal Article Sinha, Neeraj ; Department of Materials Science, Gulbarga University, Gulbarga 585106 ; Roul, Basanta ; ... - Materials Research Bulletin

Highlights: • InGaN thin films were grown on GaN template by PAMBE. • InGaN films were characterized by HRXRD, SEM and PL and Raman spectroscopy. • The indium incorporation in single phase InGaN films was found to be 23%. • The I–V characteristic of the InGaN/GaN heterojunction shows rectifying behavior. • Log–log plot of the I–V characteristics indicates the presence of SCLC mechanism. - Abstract: InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phasemore »« less
DOI: 10.1016/J.MATERRESBULL.2014.10.059
Reversible modulation of electric transport properties by oxygen absorption and releasing on Nb:SrTiO{sub 3} surface

Journal Article Lu, H. X. ; Liu, Y. B. ; Chen, Y. S., E-mail: yschen@aphy.iphy.ac.cn ; ... - Journal of Applied Physics

Pt Schottky contacts on (001)-orientated Nb-doped SrTiO{sub 3} (NSTO) in both ambient air and vacuum were investigated by the conductive atomic force microscope. The co-existed TiO{sub 2} and SrO termination layers were identified on the terrace-structured NSTO surface, where the former possessed a higher forward current than the latter. In ambient air, the barrier height of Pt/NSTO Schottky junction exhibited periodical variation with cyclic terrace plane and step sites, whereas it became homogeneous in ambient vacuum. We suggested that the oxygen absorption and releasing of surface dangling bonds were the origin for reversible changes in transport properties, which indicates amore »« less
DOI: 10.1063/1.4901346
A conductive scanning study of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/Nb:SrTiO{sub 3} hetero-junction

Journal Article Lu, H. X. ; Zhang, J. ; Zhang, H. R. ; ... - Applied Physics Letters

Basing on conductive atomic force microscopy, we presented a direct conductance mapping for the interface of the La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/Nb:SrTiO{sub 3} hetero-junction. The most remarkable observation is the presence of an interfacial layer in Nb:SrTiO{sub 3} adjacent to the manganite film. Within this layer, the AFM tip/Nb:SrTiO{sub 3} contact shows a current-voltage dependence that strongly deviates from Shockley equation, unlike a Schottky diode. Spatial extension of this layer is explored and possible transport mechanism in or outside this interfacial layer is discussed. The present work gives a direct intuitional image on the interface of manganite junction. The principle provenmore »« less
DOI: 10.1063/1.4941419
Conduction band offset at the InN/GaN heterojunction

Journal Article Kejia, Wang ; Chuanxin, Lian ; Ning, Su ; ... - Applied Physics Letters

The conduction-band offset between GaN and InN is experimentally determined. InN/n-type GaN isotype heterojunctions grown by molecular beam epitaxy are observed to exhibit Schottky-junction like behavior based on rectifying vertical current flow. From capacitance-voltage measurements on the heterojunction, the Schottky barrier height is found to be {approx}0.94 eV. The photocurrent spectroscopy measurement by backside illumination reveals an energy barrier height of 0.95 eV across the heterojunction, consistent with the capacitance measurement. By combining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results, the conduction band offset between InN and GaN is estimated to be {delta}E{sub C}=1.68{+-}0.1 eV.
DOI: 10.1063/1.2821378

Similar Records

Title: Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures

Abstract

Citation Formats

Interplay of Spin-Orbit Interactions, Dimensionality, and Octahedral Rotations in Semimetallic SrIrO 3 journal, January 2015

Electron Tunneling and Band Structure of SrTi O 3 and KTa O 3 journal, October 1970

Characterization of the Schottky barrier in SrRuO3∕Nb:SrTiO3 junctions journal, April 2007

Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces journal, July 2004

Electronic transport in doped SrTiO 3 : Conduction mechanisms and potential applications journal, April 2010

Band Alignment and Charge Transfer in Complex Oxide Interfaces journal, March 2017

Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures journal, November 2018

Thermodynamic guiding principles in selective synthesis of strontium iridate Ruddlesden-Popper epitaxial films journal, March 2016

Engineering a Spin-Orbital Magnetic Insulator by Tailoring Superlattices journal, June 2015

Balanced electron-hole transport in spin-orbit semimetal SrIrO 3 heterostructures journal, February 2018

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique journal, July 2013

Atomically engineered epitaxial anatase TiO 2 metal-semiconductor field-effect transistors journal, March 2018

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate journal, February 1999

Metal insulator transitions in perovskite SrIrO 3 thin films journal, December 2014

A highly active and stable IrO x /SrIrO 3 catalyst for the oxygen evolution reaction journal, September 2016

The capacitance of degenerate‐semiconductor Schottky barriers at low temperatures journal, March 1980

Why some interfaces cannot be sharp journal, January 2006

Compressive strain-induced metal–insulator transition in orthorhombic SrIrO 3 thin films journal, October 2014

Electron doping of cuprates via interfaces with manganites journal, August 2007

The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures journal, July 1931

Recent advances in Schottky barrier concepts journal, November 2001

SrTi O 3 : An intrinsic quantum paraelectric below 4 K journal, April 1979

Charge Transfer in Iridate-Manganite Superlattices journal, March 2017

Emerging magnetism and anomalous Hall effect in iridate–manganite heterostructures journal, September 2016

Understanding and Controlling the Work Function of Perovskite Oxides Using Density Functional Theory journal, May 2016

Relativistic G W +BSE study of the optical properties of Ruddlesden-Popper iridates journal, July 2018

Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled SrIrO 3 journal, December 2017

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions journal, June 2014

Spin-Orbit Semimetal SrIrO 3 in the Two-Dimensional Limit journal, December 2017

Activation of ultrathin SrTiO 3 with subsurface SrRuO 3 for the oxygen evolution reaction journal, January 2018

Bulk electronic structure of SrTiO3: Experiment and theory journal, December 2001

Interface-driven topological Hall effect in SrRuO 3 -SrIrO 3 bilayer journal, July 2016

Epitaxial growth and thermodynamic stability of SrIrO 3 /SrTiO 3 heterostructures journal, July 2016

Electrical transport across Au/Nb:SrTiO 3 Schottky interface with different Nb doping journal, May 2012

Fundamental Transition in the Electronic Nature of Solids journal, June 1969

Interface band profiles of Mott-insulator / Nb : SrTiO 3 heterojunctions as investigated by optical spectroscopy journal, November 2010

Title: Probing the band alignment in rectifying SrIrO₃/Nb:SrTiO₃ heterostructures

Interplay of Spin-Orbit Interactions, Dimensionality, and Octahedral Rotations in Semimetallic ${SrIrO}_{3}$
journal, January 2015

Electron Tunneling and Band Structure of SrTi $O_{3}$ and KTa $O_{3}$
journal, October 1970

Characterization of the Schottky barrier in SrRuO3∕Nb:SrTiO3 junctions
journal, April 2007

Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces
journal, July 2004

Electronic transport in doped ${SrTiO}_{3}$ : Conduction mechanisms and potential applications
journal, April 2010

Band Alignment and Charge Transfer in Complex Oxide Interfaces
journal, March 2017

Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures
journal, November 2018

Thermodynamic guiding principles in selective synthesis of strontium iridate Ruddlesden-Popper epitaxial films
journal, March 2016

Engineering a Spin-Orbital Magnetic Insulator by Tailoring Superlattices
journal, June 2015

Balanced electron-hole transport in spin-orbit semimetal ${SrIrO}_{3}$ heterostructures
journal, February 2018

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
journal, July 2013

Atomically engineered epitaxial anatase TiO ₂ metal-semiconductor field-effect transistors
journal, March 2018

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
journal, February 1999

Metal insulator transitions in perovskite SrIrO ₃ thin films
journal, December 2014

A highly active and stable IrO _x /SrIrO ₃ catalyst for the oxygen evolution reaction
journal, September 2016

The capacitance of degenerate‐semiconductor Schottky barriers at low temperatures
journal, March 1980

Why some interfaces cannot be sharp
journal, January 2006

Compressive strain-induced metal–insulator transition in orthorhombic SrIrO ₃ thin films
journal, October 2014

Electron doping of cuprates via interfaces with manganites
journal, August 2007

The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures
journal, July 1931

Recent advances in Schottky barrier concepts
journal, November 2001

SrTi $O_{3}$ : An intrinsic quantum paraelectric below 4 K
journal, April 1979

Charge Transfer in Iridate-Manganite Superlattices
journal, March 2017

Emerging magnetism and anomalous Hall effect in iridate–manganite heterostructures
journal, September 2016

Understanding and Controlling the Work Function of Perovskite Oxides Using Density Functional Theory
journal, May 2016

Relativistic $G W$ +BSE study of the optical properties of Ruddlesden-Popper iridates
journal, July 2018

Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled ${SrIrO}_{3}$
journal, December 2017

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions
journal, June 2014

Spin-Orbit Semimetal ${SrIrO}_{3}$ in the Two-Dimensional Limit
journal, December 2017

Activation of ultrathin SrTiO ₃ with subsurface SrRuO ₃ for the oxygen evolution reaction
journal, January 2018

Bulk electronic structure of SrTiO3: Experiment and theory
journal, December 2001

Interface-driven topological Hall effect in SrRuO ₃ -SrIrO ₃ bilayer
journal, July 2016

Epitaxial growth and thermodynamic stability of SrIrO ₃ /SrTiO ₃ heterostructures
journal, July 2016

Electrical transport across Au/Nb:SrTiO ₃ Schottky interface with different Nb doping
journal, May 2012

Fundamental Transition in the Electronic Nature of Solids
journal, June 1969

Interface band profiles of $Mott-insulator / Nb : {SrTiO}_{3}$ heterojunctions as investigated by optical spectroscopy
journal, November 2010