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Title: Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures

Abstract

Here, we have examined the band alignment in SrIrO3/Nb:SrTiO3 (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

Authors:
 [1];  [2];  [1];  [3];  [4]
  1. Stanford Univ., Stanford, CA (United States)
  2. Stanford Univ., Stanford, CA (United States); Univ. of Twente (The Netherlands)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1528890
Alternate Identifier(s):
OSTI ID: 1505009
Grant/Contract Number:  
ECCS-1542152; AC02-76SF00515; GBMF4415
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Kim, B. S. Y., Birkhölzer, Y. A., Feng, X., Hikita, Y., and Hwang, H. Y. Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures. United States: N. p., 2019. Web. doi:10.1063/1.5087956.
Kim, B. S. Y., Birkhölzer, Y. A., Feng, X., Hikita, Y., & Hwang, H. Y. Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures. United States. doi:10.1063/1.5087956.
Kim, B. S. Y., Birkhölzer, Y. A., Feng, X., Hikita, Y., and Hwang, H. Y. Thu . "Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures". United States. doi:10.1063/1.5087956. https://www.osti.gov/servlets/purl/1528890.
@article{osti_1528890,
title = {Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures},
author = {Kim, B. S. Y. and Birkhölzer, Y. A. and Feng, X. and Hikita, Y. and Hwang, H. Y.},
abstractNote = {Here, we have examined the band alignment in SrIrO3/Nb:SrTiO3 (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.},
doi = {10.1063/1.5087956},
journal = {Applied Physics Letters},
number = 13,
volume = 114,
place = {United States},
year = {2019},
month = {4}
}

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