Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

Anders, Mark A.; Lenahan, Patrick M.; Edwards, Arthur H.; Schultz, Peter A.; Van Ginhoven, Renee M.

doi:10.1063/1.5045668

Title: Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

Abstract

The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities. In this work, we investigate the effect of NO anneals on the interface density of states through density functional theory (DFT) calculations and electrically detected magnetic resonance (EDMR) measurements. EDMR measurements on 4H-silicon carbide (4H-SiC) MOSFETs indicate that NO annealing substantially reduces the density of near interface SiC silicon vacancy centers: it results in a 30-fold reduction in the EDMR amplitude. The anneal also alters post-NO anneal resonance line shapes significantly. EDMR measurements exclusively sensitive to interface traps with near midgap energy levels have line shapes relatively unaffected by NO anneals, whereas the measurements sensitive to defects with energy levels more broadly distributed in the 4H-SiC bandgap are significantly altered by the anneals. Using DFT, we show that the observed change in EDMR linewidth and the correlation with energy levels can be explained by nitrogen atoms introduced by the NO annealing substituting into nearby carbon sites of silicon vacancy defects.

Authors:

Anders, Mark A. ^[1]; Lenahan, Patrick M. ^[2]; Edwards, Arthur H. ^[3]; Schultz, Peter A. ^[4]; Van Ginhoven, Renee M. ^[5]

National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Pennsylvania State Univ., University Park, PA (United States)
Air Force Research Lab, Kirtland Air Force Base, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Air Force Research Laboratory, Kirtland Air Force Base, NM (United States)

Publication Date:: Tue Nov 13 00:00:00 EST 2018

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1528877

Report Number(s):: SAND-2019-6728J
Journal ID: ISSN 0021-8979; 676414

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 124; Journal Issue: 18; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Anders, Mark A., Lenahan, Patrick M., Edwards, Arthur H., Schultz, Peter A., and Van Ginhoven, Renee M. Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5045668.

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                    Anders, Mark A., Lenahan, Patrick M., Edwards, Arthur H., Schultz, Peter A., & Van Ginhoven, Renee M. Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels.  United States.  https://doi.org/10.1063/1.5045668

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                    Anders, Mark A., Lenahan, Patrick M., Edwards, Arthur H., Schultz, Peter A., and Van Ginhoven, Renee M. Tue .  
"Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels".  United States.  https://doi.org/10.1063/1.5045668.  https://www.osti.gov/servlets/purl/1528877.

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@article{osti_1528877,

  title        = {Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels},

  author       = {Anders, Mark A. and Lenahan, Patrick M. and Edwards, Arthur H. and Schultz, Peter A. and Van Ginhoven, Renee M.},

  abstractNote = {The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities. In this work, we investigate the effect of NO anneals on the interface density of states through density functional theory (DFT) calculations and electrically detected magnetic resonance (EDMR) measurements. EDMR measurements on 4H-silicon carbide (4H-SiC) MOSFETs indicate that NO annealing substantially reduces the density of near interface SiC silicon vacancy centers: it results in a 30-fold reduction in the EDMR amplitude. The anneal also alters post-NO anneal resonance line shapes significantly. EDMR measurements exclusively sensitive to interface traps with near midgap energy levels have line shapes relatively unaffected by NO anneals, whereas the measurements sensitive to defects with energy levels more broadly distributed in the 4H-SiC bandgap are significantly altered by the anneals. Using DFT, we show that the observed change in EDMR linewidth and the correlation with energy levels can be explained by nitrogen atoms introduced by the NO annealing substituting into nearby carbon sites of silicon vacancy defects.},

  doi          = {10.1063/1.5045668},

  journal      = {Journal of Applied Physics},

  number       = 18,

  volume       = 124,

  place        = {United States},

  year         = {Tue Nov 13 00:00:00 EST 2018},

  month        = {Tue Nov 13 00:00:00 EST 2018}

}

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Works referencing / citing this record:

Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors
journal, October 2019

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Title: Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

Abstract

Citation Formats

Generalized Gradient Approximation Made Simple journal, October 1996

Diffusion and Electrolytic Conduction in Crystals (Ionic Semiconductors) journal, July 1933

Atomic parameters for paramagnetic resonance data journal, June 1978

Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO 2 interface journal, December 2017

A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors journal, March 2014

Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure journal, June 1999

Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect journal, August 2012

A reliable approach to charge-pumping measurements in MOS transistors journal, January 1984

Local electrostatic moments and periodic boundary conditions journal, July 1999

Explanation of the large spin-dependent recombination effect in semiconductors journal, January 1978

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide journal, March 2000

The E 1– E 2 center in gallium arsenide is the divacancy journal, January 2015

Behavior of nitrogen atoms in SiC-SiO 2 interfaces studied by electrically detected magnetic resonance journal, October 2011

Formation and annealing behaviors of qubit centers in 4H-SiC from first principles journal, November 2013

Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices journal, January 1993

Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC journal, June 2001

Charge pumping in MOS devices journal, March 1969

Modeling charged defects inside density functional theory band gaps journal, May 2014

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping journal, September 2008

Charged Local Defects in Extended Systems journal, February 2000

Fixed nitrogen atoms in the SiO 2 /SiC interface region and their direct relationship to interface trap density journal, October 2011

The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance journal, May 2013

Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors journal, August 2011

Self-Consistent Results for n -Type Si Inversion Layers journal, June 1972

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC journal, June 2009

Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation journal, July 1989

Theory of Defect Levels and the “Band Gap Problem” in Silicon journal, June 2006

Generalized norm-conserving pseudopotentials journal, August 1989

Off-center Tl and Na dopant centers in CsI journal, November 2013

Counter-doped MOSFETs of 4H-SiC journal, December 1999

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide journal, April 2001

Principles of Magnetic Resonance book, January 1990

Electronic Population Analysis on LCAO–MO Molecular Wave Functions. I journal, October 1955

Simple intrinsic defects in gallium arsenide journal, November 2009

Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors journal, October 2019

Generalized Gradient Approximation Made Simple
journal, October 1996

Diffusion and Electrolytic Conduction in Crystals (Ionic Semiconductors)
journal, July 1933

Atomic parameters for paramagnetic resonance data
journal, June 1978

Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO ₂ interface
journal, December 2017

A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors
journal, March 2014

Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure
journal, June 1999

Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect
journal, August 2012

A reliable approach to charge-pumping measurements in MOS transistors
journal, January 1984

Local electrostatic moments and periodic boundary conditions
journal, July 1999

Explanation of the large spin-dependent recombination effect in semiconductors
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Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
journal, March 2000

The E 1– E 2 center in gallium arsenide is the divacancy
journal, January 2015

Behavior of nitrogen atoms in SiC-SiO ₂ interfaces studied by electrically detected magnetic resonance
journal, October 2011

Formation and annealing behaviors of qubit centers in 4H-SiC from first principles
journal, November 2013

Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices
journal, January 1993

Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC
journal, June 2001

Charge pumping in MOS devices
journal, March 1969

Modeling charged defects inside density functional theory band gaps
journal, May 2014

The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
journal, September 2008

Charged Local Defects in Extended Systems
journal, February 2000

Fixed nitrogen atoms in the SiO ₂ /SiC interface region and their direct relationship to interface trap density
journal, October 2011

The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance
journal, May 2013

Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors
journal, August 2011

Self-Consistent Results for $n$ -Type Si Inversion Layers
journal, June 1972

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC
journal, June 2009

Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
journal, July 1989

Theory of Defect Levels and the “Band Gap Problem” in Silicon
journal, June 2006

Generalized norm-conserving pseudopotentials
journal, August 1989

Off-center Tl and Na dopant centers in CsI
journal, November 2013

Counter-doped MOSFETs of 4H-SiC
journal, December 1999

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
journal, April 2001

Principles of Magnetic Resonance
book, January 1990

Electronic Population Analysis on LCAO–MO Molecular Wave Functions. I
journal, October 1955

Simple intrinsic defects in gallium arsenide
journal, November 2009

Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors
journal, October 2019