Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

Chatterjee, Bikramjit; Zeng, Ke; Nordquist, Christopher; Singisetti, Uttam; Choi, Sukwon

doi:10.1109/TCPMT.2019.2923356

Title: Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

Abstract

The ultra-wide bandgap (~4.8 eV) and melt-grown substrate availability of β-Ga₂O₃ gives promise to the development of next generation power electronic devices with dramatically improved size, weight, power, and efficiency over current state-of-the-art wide bandgap devices based on 4H-SiC and GaN. Also, with recent advancements made in GHz frequency RF applications, the potential for monolithic or heterogenous integration of RF and power switches has attracted researchers’ attention. Yet, it is expected that Ga₂O₃ devices will suffer from self-heating due to the poor thermal conductivity of the material. Thermoreflectance thermal imaging and infrared thermography were used to understand the thermal characteristics of a MOSFET fabricated via homo-epitaxy. A 3D coupled electro-thermal model was constructed based on the electrical and thermal characterization results. The device model shows that a homo-epitaxial device suffers from an unacceptable junction temperature rise of ~1500°C under a targeted power density of 10 W/mm indicating the importance of employing device level thermal managements to individual Ga₂O₃ transistors. The effectiveness of various active and passive cooling solutions was tested to achieve a goal of reducing the device operating temperature below 200°C at a power density of 10 W/mm. Results show that flip-chip hetero-integration is a viable option to enhancemore »« less

Authors:

Chatterjee, Bikramjit ^[1]; Zeng, Ke ^[2]; Nordquist, Christopher ^[3]; Singisetti, Uttam ^[2]; Choi, Sukwon ^[1]

Pennsylvania State Univ., University Park, PA (United States)
Univ. at Buffalo, The State Univ. of New York, Buffalo, NY (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Mon Jun 17 00:00:00 EDT 2019

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1528871

Report Number(s):: SAND-2019-6758J
Journal ID: ISSN 2156-3950; 676431

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Components, Packaging, and Manufacturing Technology

Additional Journal Information:: Journal Volume: 9; Journal Issue: 12; Journal ID: ISSN 2156-3950

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; Electronics cooling; Gallium oxide; β-Ga2O3; Infrared imaging; Thermal management; Thermoreflectance; Flip-chip devices

Citation Formats


                    Chatterjee, Bikramjit, Zeng, Ke, Nordquist, Christopher, Singisetti, Uttam, and Choi, Sukwon. Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors.  United States: N. p., 2019. 
Web.  doi:10.1109/TCPMT.2019.2923356.

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                    Chatterjee, Bikramjit, Zeng, Ke, Nordquist, Christopher, Singisetti, Uttam, & Choi, Sukwon. Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors.  United States.  https://doi.org/10.1109/TCPMT.2019.2923356

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                    Chatterjee, Bikramjit, Zeng, Ke, Nordquist, Christopher, Singisetti, Uttam, and Choi, Sukwon. Mon .  
"Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors".  United States.  https://doi.org/10.1109/TCPMT.2019.2923356.  https://www.osti.gov/servlets/purl/1528871.

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@article{osti_1528871,

  title        = {Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors},

  author       = {Chatterjee, Bikramjit and Zeng, Ke and Nordquist, Christopher and Singisetti, Uttam and Choi, Sukwon},

  abstractNote = {The ultra-wide bandgap (~4.8 eV) and melt-grown substrate availability of β-Ga2O3 gives promise to the development of next generation power electronic devices with dramatically improved size, weight, power, and efficiency over current state-of-the-art wide bandgap devices based on 4H-SiC and GaN. Also, with recent advancements made in GHz frequency RF applications, the potential for monolithic or heterogenous integration of RF and power switches has attracted researchers’ attention. Yet, it is expected that Ga2O3 devices will suffer from self-heating due to the poor thermal conductivity of the material. Thermoreflectance thermal imaging and infrared thermography were used to understand the thermal characteristics of a MOSFET fabricated via homo-epitaxy. A 3D coupled electro-thermal model was constructed based on the electrical and thermal characterization results. The device model shows that a homo-epitaxial device suffers from an unacceptable junction temperature rise of ~1500°C under a targeted power density of 10 W/mm indicating the importance of employing device level thermal managements to individual Ga2O3 transistors. The effectiveness of various active and passive cooling solutions was tested to achieve a goal of reducing the device operating temperature below 200°C at a power density of 10 W/mm. Results show that flip-chip hetero-integration is a viable option to enhance both the steady-state and transient thermal characteristics of Ga2O3 devices without sacrificing the intrinsic advantage of high-quality native substrates. Also, it is not an active thermal management solution that entails peripherals requiring additional size and cost implications.},

  doi          = {10.1109/TCPMT.2019.2923356},

  journal      = {IEEE Transactions on Components, Packaging, and Manufacturing Technology},

  number       = 12,

  volume       = 9,

  place        = {United States},

  year         = {Mon Jun 17 00:00:00 EDT 2019},

  month        = {Mon Jun 17 00:00:00 EDT 2019}

}

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Works referencing / citing this record:

Materials issues and devices of α- and β-Ga ₂ O ₃
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Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
journal, January 2020

Chatterjee, Bikramjit; Dundar, Canberk; Beechem, Thomas E.
Journal of Applied Physics, Vol. 127, Issue 4
DOI: 10.1063/1.5123726

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