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Title: Photocarrier Transfer across Monolayer MoS 2 –MoSe 2 Lateral Heterojunctions

Abstract

In-plane heterojuctions formed from two monolayer semiconductors represent the finest control of electrons in condensed matter and have attracted significant interest. Various device studies have shown the effectiveness of such structures to control electronic processes, illustrating their potentials for electronic and optoelectronic applications. However, information about the physical mechanisms of charge carrier transfer across the junctions is still rare, mainly due to the lack of adequate experimental techniques. Here we show that transient absorption measurements with high spatial and temporal resolution can be used to directly monitor such transfer processes. We studied MoS 2–MoSe 2 in-plane heterostructures fabricated by chemical vapor deposition and lithographic patterning followed by laser-generated vapor sulfurization. Transient absorption measurements in reflection geometry revealed evidence of exciton transfer from MoS 2 to MoSe 2. By comparing the experimental data with a simulation, we extracted an exciton transfer velocity of 10 4 m s–1. These results provide valuable information for understanding and controlling in-plane carrier transfer in two-dimensional lateral heterostructures for their electronic and optoelectronic applications.

Authors:
 [1]; ORCiD logo [2];  [1]; ORCiD logo [3]; ORCiD logo [4]; ORCiD logo [4]; ORCiD logo [5]; ORCiD logo [4]; ORCiD logo [1]
  1. Univ. of Kansas, Lawrence, KS (United States). Dept. of Physics and Astronomy
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Auburn Univ., AL (United States). Electrical and Computer Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center for Interdisciplinary Research and Graduate Education
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  5. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1528725
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 12; Journal Issue: 7; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
van der Waals interface; transition metal dichalcogenide; electron transfer; transient absorption; two-dimensional material

Citation Formats

Bellus, Matthew Z., Mahjouri-Samani, Masoud, Lane, Samuel D., Oyedele, Akinola D., Li, Xufan, Puretzky, Alexander A., Geohegan, David, Xiao, Kai, and Zhao, Hui. Photocarrier Transfer across Monolayer MoS2 –MoSe2 Lateral Heterojunctions. United States: N. p., 2018. Web. doi:10.1021/acsnano.8b02843.
Bellus, Matthew Z., Mahjouri-Samani, Masoud, Lane, Samuel D., Oyedele, Akinola D., Li, Xufan, Puretzky, Alexander A., Geohegan, David, Xiao, Kai, & Zhao, Hui. Photocarrier Transfer across Monolayer MoS2 –MoSe2 Lateral Heterojunctions. United States. doi:10.1021/acsnano.8b02843.
Bellus, Matthew Z., Mahjouri-Samani, Masoud, Lane, Samuel D., Oyedele, Akinola D., Li, Xufan, Puretzky, Alexander A., Geohegan, David, Xiao, Kai, and Zhao, Hui. Fri . "Photocarrier Transfer across Monolayer MoS2 –MoSe2 Lateral Heterojunctions". United States. doi:10.1021/acsnano.8b02843. https://www.osti.gov/servlets/purl/1528725.
@article{osti_1528725,
title = {Photocarrier Transfer across Monolayer MoS2 –MoSe2 Lateral Heterojunctions},
author = {Bellus, Matthew Z. and Mahjouri-Samani, Masoud and Lane, Samuel D. and Oyedele, Akinola D. and Li, Xufan and Puretzky, Alexander A. and Geohegan, David and Xiao, Kai and Zhao, Hui},
abstractNote = {In-plane heterojuctions formed from two monolayer semiconductors represent the finest control of electrons in condensed matter and have attracted significant interest. Various device studies have shown the effectiveness of such structures to control electronic processes, illustrating their potentials for electronic and optoelectronic applications. However, information about the physical mechanisms of charge carrier transfer across the junctions is still rare, mainly due to the lack of adequate experimental techniques. Here we show that transient absorption measurements with high spatial and temporal resolution can be used to directly monitor such transfer processes. We studied MoS2–MoSe2 in-plane heterostructures fabricated by chemical vapor deposition and lithographic patterning followed by laser-generated vapor sulfurization. Transient absorption measurements in reflection geometry revealed evidence of exciton transfer from MoS2 to MoSe2. By comparing the experimental data with a simulation, we extracted an exciton transfer velocity of 104 m s–1. These results provide valuable information for understanding and controlling in-plane carrier transfer in two-dimensional lateral heterostructures for their electronic and optoelectronic applications.},
doi = {10.1021/acsnano.8b02843},
journal = {ACS Nano},
number = 7,
volume = 12,
place = {United States},
year = {2018},
month = {6}
}

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