Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films
Abstract
Abstract Ternary metal‐oxide material systems commonly crystallize in the perovskite crystal structure, which is utilized in numerous electronic applications. In contrast to oxides, there are no known nitride perovskites, likely due to the competition with oxidation, which makes the formation of pure nitride materials difficult and synthesis of oxynitride materials more common. While deposition of oxynitride perovskite thin films is important for many electronic applications, it is difficult to control oxygen and nitrogen stoichiometry. Lanthanum tungsten oxynitride (LaWN 3− δ O δ ) thin films with varying La:W ratio are synthesized by combinatorial sputtering and characterized for their chemical composition, crystal structure, and microstructure. A three‐step synthesis method, which involves co‐sputtering, capping layer deposition, and rapid thermal annealing, is established for producing crystalline thin films while minimizing the oxygen content. Elemental depth profiling results show that the cation‐stoichiometric films contain approximately one oxygen for every five nitrogen (δ = 0.5). Synchrotron‐based diffraction indicates a tetragonal perovskite crystal structure. These results are discussed in terms of the perovskite tolerance factors, octahedral tilting, and bond valence. Overall, this synthesis and characterization is expected to pave the way toward future thin film property measurements of lanthanum tungsten oxynitrides and eventual synthesis of oxygen‐freemore »
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Univ. of California, Berkeley, CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Colorado School of Mines, Golden, CO (United States)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1526455
- Alternate Identifier(s):
- OSTI ID: 1524106
- Report Number(s):
- NREL/JA-5K00-71392
Journal ID: ISSN 2199-160X
- Grant/Contract Number:
- AC36-08GO28308; DE‐AC36‐08GO28308; DE‐AC02‐76SF00515
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 7; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; LaWON; oxynitride; perovskites; sputtering; thin films
Citation Formats
Talley, Kevin, Mangum, John, Perkins, Craig, Woods-Robinson, Rachel, Mehta, Apurva, Gorman, Brian, Brennecka, Geoff, and Zakutayev, Andriy A. Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films. United States: N. p., 2019.
Web. doi:10.1002/aelm.201900214.
Talley, Kevin, Mangum, John, Perkins, Craig, Woods-Robinson, Rachel, Mehta, Apurva, Gorman, Brian, Brennecka, Geoff, & Zakutayev, Andriy A. Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films. United States. https://doi.org/10.1002/aelm.201900214
Talley, Kevin, Mangum, John, Perkins, Craig, Woods-Robinson, Rachel, Mehta, Apurva, Gorman, Brian, Brennecka, Geoff, and Zakutayev, Andriy A. Mon .
"Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films". United States. https://doi.org/10.1002/aelm.201900214. https://www.osti.gov/servlets/purl/1526455.
@article{osti_1526455,
title = {Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films},
author = {Talley, Kevin and Mangum, John and Perkins, Craig and Woods-Robinson, Rachel and Mehta, Apurva and Gorman, Brian and Brennecka, Geoff and Zakutayev, Andriy A.},
abstractNote = {Abstract Ternary metal‐oxide material systems commonly crystallize in the perovskite crystal structure, which is utilized in numerous electronic applications. In contrast to oxides, there are no known nitride perovskites, likely due to the competition with oxidation, which makes the formation of pure nitride materials difficult and synthesis of oxynitride materials more common. While deposition of oxynitride perovskite thin films is important for many electronic applications, it is difficult to control oxygen and nitrogen stoichiometry. Lanthanum tungsten oxynitride (LaWN 3− δ O δ ) thin films with varying La:W ratio are synthesized by combinatorial sputtering and characterized for their chemical composition, crystal structure, and microstructure. A three‐step synthesis method, which involves co‐sputtering, capping layer deposition, and rapid thermal annealing, is established for producing crystalline thin films while minimizing the oxygen content. Elemental depth profiling results show that the cation‐stoichiometric films contain approximately one oxygen for every five nitrogen (δ = 0.5). Synchrotron‐based diffraction indicates a tetragonal perovskite crystal structure. These results are discussed in terms of the perovskite tolerance factors, octahedral tilting, and bond valence. Overall, this synthesis and characterization is expected to pave the way toward future thin film property measurements of lanthanum tungsten oxynitrides and eventual synthesis of oxygen‐free nitride perovskites.},
doi = {10.1002/aelm.201900214},
journal = {Advanced Electronic Materials},
number = 7,
volume = 5,
place = {United States},
year = {Mon Jun 03 00:00:00 EDT 2019},
month = {Mon Jun 03 00:00:00 EDT 2019}
}
Web of Science
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