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Title: Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV

Abstract

The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.

Authors:
 [1];  [1];  [1]; ORCiD logo [2];  [3]
  1. Univ. of Miyazaki, Miyazaki (Japan)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Univ. of Utah, Salt Lake City, UT (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1526454
Report Number(s):
NREL/JA-5900-74157
Journal ID: ISSN 1882-0778
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Express
Additional Journal Information:
Journal Volume: 12; Journal Issue: 8; Journal ID: ISSN 1882-0778
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; open-circuit voltage; power conversion efficiency; thin film CdTe photovoltaic devices

Citation Formats

Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV. United States: N. p., 2019. Web. https://doi.org/10.7567/1882-0786/ab27fb.
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, & Scarpulla, Michael A. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV. United States. https://doi.org/10.7567/1882-0786/ab27fb
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Mon . "Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV". United States. https://doi.org/10.7567/1882-0786/ab27fb. https://www.osti.gov/servlets/purl/1526454.
@article{osti_1526454,
title = {Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV},
author = {Nagaoka, Akira and Nishioka, Kensuke and Yoshino, Kenji and Kuciauskas, Darius and Scarpulla, Michael A.},
abstractNote = {The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.},
doi = {10.7567/1882-0786/ab27fb},
journal = {Applied Physics Express},
number = 8,
volume = 12,
place = {United States},
year = {2019},
month = {7}
}

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