DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV

Journal Article · · Applied Physics Express
 [1];  [1];  [1]; ORCiD logo [2];  [3]
  1. Univ. of Miyazaki, Miyazaki (Japan)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Univ. of Utah, Salt Lake City, UT (United States)

The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1526454
Report Number(s):
NREL/JA--5900-74157
Journal Information:
Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 8 Vol. 12; ISSN 1882-0778
Publisher:
Japan Society of Applied PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

References (24)

Solar cell efficiency tables (Version 53)
  • Green, Martin A.; Hishikawa, Yoshihiro; Dunlop, Ewan D.
  • Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 1 https://doi.org/10.1002/pip.3102
journal December 2018
Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method journal June 2017
Understanding arsenic incorporation in CdTe with atom probe tomography journal August 2018
CdTe solar cells with open-circuit voltage breaking the 1 V barrier journal February 2016
Self-compensation in arsenic doping of CdTe journal July 2017
Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping journal September 2018
Time-resolved photoluminescence studies of CdTe solar cells journal September 2003
A comprehensive picture of Cu doping in CdTe solar cells journal November 2013
Radiative and interfacial recombination in CdTe heterostructures journal December 2014
Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing journal July 2015
Intrinsic surface passivation of CdTe journal October 2015
First-principles study of roles of Cu and Cl in polycrystalline CdTe journal January 2016
Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe journal November 2016
The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells journal June 2017
Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior journal December 2017
p-type doping efficiency in CdTe: Influence of second phase formation journal April 2018
High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals journal May 2018
Long‐lifetime photoconductivity effect in n ‐type GaAlAs journal September 1977
Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe journal January 2018
Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe journal May 2016
Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As journal January 1979
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe journal October 2002
Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations journal August 2013
Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation journal October 2013