Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV
Abstract
The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.
- Authors:
-
- Univ. of Miyazaki, Miyazaki (Japan)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Univ. of Utah, Salt Lake City, UT (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1526454
- Report Number(s):
- NREL/JA-5900-74157
Journal ID: ISSN 1882-0778
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Express
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 8; Journal ID: ISSN 1882-0778
- Publisher:
- Japan Society of Applied Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; open-circuit voltage; power conversion efficiency; thin film CdTe photovoltaic devices
Citation Formats
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV. United States: N. p., 2019.
Web. doi:10.7567/1882-0786/ab27fb.
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, & Scarpulla, Michael A. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV. United States. https://doi.org/10.7567/1882-0786/ab27fb
Nagaoka, Akira, Nishioka, Kensuke, Yoshino, Kenji, Kuciauskas, Darius, and Scarpulla, Michael A. Mon .
"Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV". United States. https://doi.org/10.7567/1882-0786/ab27fb. https://www.osti.gov/servlets/purl/1526454.
@article{osti_1526454,
title = {Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV},
author = {Nagaoka, Akira and Nishioka, Kensuke and Yoshino, Kenji and Kuciauskas, Darius and Scarpulla, Michael A.},
abstractNote = {The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.},
doi = {10.7567/1882-0786/ab27fb},
journal = {Applied Physics Express},
number = 8,
volume = 12,
place = {United States},
year = {2019},
month = {7}
}
Web of Science
Figures / Tables:

Works referenced in this record:
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002
- Wei, Su-Huai; Zhang, S. B.
- Physical Review B, Vol. 66, Issue 15
Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013
- Ma, Jie; Kuciauskas, Darius; Albin, David
- Physical Review Letters, Vol. 111, Issue 6, Article No. 067402
First-principles study of roles of Cu and Cl in polycrystalline CdTe
journal, January 2016
- Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang
- Journal of Applied Physics, Vol. 119, Issue 4
CdTe solar cells with open-circuit voltage breaking the 1 V barrier
journal, February 2016
- Burst, J. M.; Duenow, J. N.; Albin, D. S.
- Nature Energy, Vol. 1, Issue 3
Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
journal, July 2015
- Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang
- Journal of Applied Physics, Vol. 118, Issue 2
Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe
journal, May 2016
- Colegrove, Eric; Harvey, Steven P.; Yang, Ji-Hui
- Physical Review Applied, Vol. 5, Issue 5
Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe
journal, January 2018
- Colegrove, E.; Yang, J-H; Harvey, S. P.
- Journal of Physics D: Applied Physics, Vol. 51, Issue 7
Self-compensation in arsenic doping of CdTe
journal, July 2017
- Ablekim, Tursun; Swain, Santosh K.; Yin, Wan-Jian
- Scientific Reports, Vol. 7, Issue 1
p-type doping efficiency in CdTe: Influence of second phase formation
journal, April 2018
- McCoy, Jedidiah J.; Swain, Santosh K.; Sieber, John R.
- Journal of Applied Physics, Vol. 123, Issue 16
Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
journal, September 2018
- McCandless, Brian E.; Buchanan, Wayne A.; Thompson, Christopher P.
- Scientific Reports, Vol. 8, Issue 1
Long‐lifetime photoconductivity effect in n ‐type GaAlAs
journal, September 1977
- Nelson, R. J.
- Applied Physics Letters, Vol. 31, Issue 5
Trapping characteristics and a donor-complex ( ) model for the persistent-photoconductivity trapping center in Te-doped
journal, January 1979
- Lang, D. V.; Logan, R. A.; Jaros, M.
- Physical Review B, Vol. 19, Issue 2
Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method
journal, June 2017
- Nagaoka, Akira; Han, Kyu-Bum; Misra, Sudhajit
- Journal of Crystal Growth, Vol. 467
Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior
journal, December 2017
- Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.
- Applied Physics Letters, Vol. 111, Issue 23
High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals
journal, May 2018
- Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah
- Applied Physics Letters, Vol. 112, Issue 19
Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation
journal, October 2013
- Kuciauskas, Darius; Kanevce, Ana; Burst, James M.
- IEEE Journal of Photovoltaics, Vol. 3, Issue 4
Understanding arsenic incorporation in CdTe with atom probe tomography
journal, August 2018
- Burton, G. L.; Diercks, D. R.; Ogedengbe, O. S.
- Solar Energy Materials and Solar Cells, Vol. 182
Intrinsic surface passivation of CdTe
journal, October 2015
- Reese, M. O.; Perkins, C. L.; Burst, J. M.
- Journal of Applied Physics, Vol. 118, Issue 15
Radiative and interfacial recombination in CdTe heterostructures
journal, December 2014
- Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G.
- Applied Physics Letters, Vol. 105, Issue 22
Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe
journal, November 2016
- Burst, James M.; Farrell, Stuart B.; Albin, David S.
- APL Materials, Vol. 4, Issue 11
Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003
- Metzger, W. K.; Albin, D.; Levi, D.
- Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells
journal, June 2017
- Kanevce, A.; Reese, M. O.; Barnes, T. M.
- Journal of Applied Physics, Vol. 121, Issue 21
Solar cell efficiency tables (Version 53)
journal, December 2018
- Green, Martin A.; Hishikawa, Yoshihiro; Dunlop, Ewan D.
- Progress in Photovoltaics: Research and Applications, Vol. 27, Issue 1
A comprehensive picture of Cu doping in CdTe solar cells
journal, November 2013
- Perrenoud, J.; Kranz, L.; Gretener, C.
- Journal of Applied Physics, Vol. 114, Issue 17
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