Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV
Journal Article
·
· Applied Physics Express
- Univ. of Miyazaki, Miyazaki (Japan)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Univ. of Utah, Salt Lake City, UT (United States)
The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm–3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm–3, yet we also demonstrate CdTe with >1017 cm–3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1526454
- Report Number(s):
- NREL/JA-5900-74157
- Journal Information:
- Applied Physics Express, Vol. 12, Issue 8; ISSN 1882-0778
- Publisher:
- Japan Society of Applied PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 16 works
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