Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si
Abstract
Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.
- Authors:
-
[1];
- Arizona State University, School of Electrical, Computer and Energy Engineering, Tempe, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1525543
- Grant/Contract Number:
- EEC1041895
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Chemistry Chemical Physics. PCCP
- Additional Journal Information:
- Journal Name: Physical Chemistry Chemical Physics. PCCP Journal Volume: 21 Journal Issue: 24; Journal ID: ISSN 1463-9076
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Vatan Meidanshahi, Reza, Bowden, Stuart, and Goodnick, Stephen M. Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si. United Kingdom: N. p., 2019.
Web. doi:10.1039/C9CP01121H.
Vatan Meidanshahi, Reza, Bowden, Stuart, & Goodnick, Stephen M. Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si. United Kingdom. https://doi.org/10.1039/C9CP01121H
Vatan Meidanshahi, Reza, Bowden, Stuart, and Goodnick, Stephen M. Wed .
"Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si". United Kingdom. https://doi.org/10.1039/C9CP01121H.
@article{osti_1525543,
title = {Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si},
author = {Vatan Meidanshahi, Reza and Bowden, Stuart and Goodnick, Stephen M.},
abstractNote = {Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.},
doi = {10.1039/C9CP01121H},
journal = {Physical Chemistry Chemical Physics. PCCP},
number = 24,
volume = 21,
place = {United Kingdom},
year = {Wed Jun 19 00:00:00 EDT 2019},
month = {Wed Jun 19 00:00:00 EDT 2019}
}
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https://doi.org/10.1039/C9CP01121H
https://doi.org/10.1039/C9CP01121H
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Works referenced in this record:
Large-Scale Simulations of -Si:H: The Origin of Midgap States Revisited
journal, December 2011
- Khomyakov, P. A.; Andreoni, Wanda; Afify, N. D.
- Physical Review Letters, Vol. 107, Issue 25
Origin of the photo-induced changes in hydrogenated amorphous silicon
journal, June 1983
- Adler, David
- Solar Cells, Vol. 9, Issue 1-2
Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters
journal, March 2013
- Pfanner, G.; Freysoldt, C.; Neugebauer, J.
- Physical Review B, Vol. 87, Issue 12
Generalized Gradient Approximation Made Simple
journal, October 1996
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
journal, July 1985
- Stutzmann, M.; Jackson, W. B.; Tsai, C. C.
- Physical Review B, Vol. 32, Issue 1
Microscopic Description of Light Induced Defects in Amorphous Silicon Solar Cells
journal, December 2008
- Wagner, Lucas K.; Grossman, Jeffrey C.
- Physical Review Letters, Vol. 101, Issue 26
Surface orientation effects in crystalline–amorphous silicon interfaces
journal, January 2012
- Nolan, Michael; Legesse, Merid; Fagas, Giorgos
- Physical Chemistry Chemical Physics, Vol. 14, Issue 43
Role of i-aSi:H Layers in aSi:H/cSi Heterojunction Solar Cells
journal, October 2013
- Hayashi, Yutaka; Li, Debin; Ogura, Atsushi
- IEEE Journal of Photovoltaics, Vol. 3, Issue 4
Morphology and Number Density of Voids in Hydrogenated Amorphous Silicon: An Ab Initio Study
journal, February 2017
- Biswas, Parthapratim; Paudel, Durga; Atta-Fynn, Raymond
- Physical Review Applied, Vol. 7, Issue 2
Atomistic Structure of Band-Tail States in Amorphous Silicon
journal, March 1998
- Dong, Jianjun; Drabold, D. A.
- Physical Review Letters, Vol. 80, Issue 9
Bond Selectivity in Silicon Film Growth
journal, May 1992
- Boland, J. J.; Parsons, G. N.
- Science, Vol. 256, Issue 5061
Thermally induced recrystallization of textured hydrogenated nanocrystalline silicon
journal, January 2014
- Fugallo, Giorgia; Mattoni, Alessandro
- Physical Review B, Vol. 89, Issue 4
Quantifying Chemical Structure and Machine‐Learned Atomic Energies in Amorphous and Liquid Silicon
journal, April 2019
- Bernstein, Noam; Bhattarai, Bishal; Csányi, Gábor
- Angewandte Chemie, Vol. 131, Issue 21
Field‐effect phenomena in hydrogenated amorphous silicon photoreceptors
journal, April 1984
- Mort, J.; Jansen, F.; Grammatica, S.
- Journal of Applied Physics, Vol. 55, Issue 8
Origins of Structural Hole Traps in Hydrogenated Amorphous Silicon
journal, April 2013
- Johlin, Eric; Wagner, Lucas K.; Buonassisi, Tonio
- Physical Review Letters, Vol. 110, Issue 14
Dangling-bond levels and structure relaxation in hydrogenated amorphous silicon
journal, October 1997
- Biswas, R.; Li, Qiming; Yoon, Y.
- Physical Review B, Vol. 56, Issue 15
Staebler-Wronski Effect in Hydrogenated Amorphous Silicon and Related Alloy Films
journal, June 2004
- Shimizu, Tatsuo
- Japanese Journal of Applied Physics, Vol. 43, Issue 6A
Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous silicon
journal, September 1993
- Branz, Howard M.; Schiff, Eric A.
- Physical Review B, Vol. 48, Issue 12
A first principles analysis of the effect of hydrogen concentration in hydrogenated amorphous silicon on the formation of strained Si-Si bonds and the optical and mobility gaps
journal, May 2014
- Legesse, Merid; Nolan, Michael; Fagas, Giorgos
- Journal of Applied Physics, Vol. 115, Issue 20
Hydrogen collision model: Quantitative description of metastability in amorphous silicon
journal, February 1999
- Branz, Howard M.
- Physical Review B, Vol. 59, Issue 8
Electron and hole drift mobility in amorphous silicon
journal, December 1977
- Moore, A. R.
- Applied Physics Letters, Vol. 31, Issue 11
Experimental evidence of photoinduced expansion in hydrogenated amorphous silicon using bending detected optical lever method
journal, June 1998
- Gotoh, T.; Nonomura, S.; Nishio, M.
- Applied Physics Letters, Vol. 72, Issue 23
Hydrogen-mediated structural changes of amorphous and microcrystalline silicon
journal, July 1998
- Kaiser, I.; Nickel, N. H.; Fuhs, W.
- Physical Review B, Vol. 58, Issue 4
Atomic modeling of structural and optical properties of amorphous silicon
journal, May 2013
- Vazhappilly, Tijo; Micha, David A.
- Chemical Physics Letters, Vol. 570
Amorphous silicon studied by ab initio molecular dynamics: Preparation, structure, and properties
journal, November 1991
- Štich, I.; Car, R.; Parrinello, M.
- Physical Review B, Vol. 44, Issue 20
Revisiting the Dependence of the Optical and Mobility Gaps of Hydrogenated Amorphous Silicon on Hydrogen Concentration
journal, October 2013
- Legesse, Merid; Nolan, Michael; Fagas, Giorgos
- The Journal of Physical Chemistry C, Vol. 117, Issue 45
Optimal atomic structure of amorphous silicon obtained from density functional theory calculations
journal, June 2017
- Pedersen, Andreas; Pizzagalli, Laurent; Jónsson, Hannes
- New Journal of Physics, Vol. 19, Issue 6
Band tails, entropy, and equilibrium defects in hydrogenated amorphous silicon
journal, August 1987
- Smith, Z. E.; Wagner, S.
- Physical Review Letters, Vol. 59, Issue 6
Self‐consistent molecular orbital methods. XX. A basis set for correlated wave functions
journal, January 1980
- Krishnan, R.; Binkley, J. S.; Seeger, R.
- The Journal of Chemical Physics, Vol. 72, Issue 1
Large and realistic models of amorphous silicon
journal, July 2018
- Igram, Dale; Bhattarai, Bishal; Biswas, Parthapratim
- Journal of Non-Crystalline Solids, Vol. 492
Photoinduced stress in hydrogenated amorphous silicon films
journal, March 2002
- Stratakis, E.; Spanakis, E.; Tzanetakis, P.
- Applied Physics Letters, Vol. 80, Issue 10
Mechanisms of thermal equilibration in doped amorphous silicon
journal, March 1988
- Street, R. A.; Hack, M.; Jackson, W. B.
- Physical Review B, Vol. 37, Issue 8
Generation of amorphous silicon structures by rapid quenching: A molecular-dynamics study
journal, December 1997
- Ishimaru, Manabu; Munetoh, Shinji; Motooka, Teruaki
- Physical Review B, Vol. 56, Issue 23
Atomistic Origin of Urbach Tails in Amorphous Silicon
journal, May 2008
- Pan, Y.; Inam, F.; Zhang, M.
- Physical Review Letters, Vol. 100, Issue 20
The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries
journal, September 2012
- Freysoldt, Christoph; Pfanner, Gernot; Neugebauer, Jörg
- Journal of Non-Crystalline Solids, Vol. 358, Issue 17
Space-charge-limited conduction for the determination of the midgap density of states in amorphous silicon: Theory and experiment
journal, September 1984
- Solomon, I.; Benferhat, R.; Quoc, H. Tran
- Physical Review B, Vol. 30, Issue 6
Theoretical study on the nature of band-tail states in amorphous Si
journal, December 1998
- Fedders, P. A.; Drabold, D. A.; Nakhmanson, S.
- Physical Review B, Vol. 58, Issue 23
Thermal-equilibrium processes in amorphous silicon
journal, January 1987
- Street, R.; Kakalios, J.; Tsai, C.
- Physical Review B, Vol. 35, Issue 3
Amorphous silicon solar cell
journal, June 1976
- Carlson, D. E.; Wronski, C. R.
- Applied Physics Letters, Vol. 28, Issue 11
Modeling noncrystalline materials: Use of vibrational spectra as a protocol for validation
journal, June 2009
- Gaspari, F.; Kupchak, I. M.; Shkrebtii, A. I.
- Physical Review B, Vol. 79, Issue 22
Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study
journal, January 2019
- Santos, Iván; Aboy, María; Marqués, Luis A.
- Journal of Non-Crystalline Solids, Vol. 503-504
Ferromagnetic Properties of Y-Doped AlN Nanorods
journal, August 2010
- Lei, Weiwei; Liu, Dan; Chen, Xin
- The Journal of Physical Chemistry C, Vol. 114, Issue 37
Dangling Bond in
journal, May 1986
- Bar-Yam, Y.; Joannopoulos, J. D.
- Physical Review Letters, Vol. 56, Issue 20
First-Principles Prediction of Densities of Amorphous Materials: The Case of Amorphous Silicon
journal, February 2018
- Furukawa, Yoritaka; Matsushita, Yu-ichiro
- Journal of the Physical Society of Japan, Vol. 87, Issue 2
Density‐functional thermochemistry. III. The role of exact exchange
journal, April 1993
- Becke, Axel D.
- The Journal of Chemical Physics, Vol. 98, Issue 7, p. 5648-5652
High Resolution Radial Distribution Function of Pure Amorphous Silicon
journal, April 1999
- Laaziri, Khalid; Kycia, S.; Roorda, S.
- Physical Review Letters, Vol. 82, Issue 17
Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning
journal, March 2014
- Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.
- Physical Review B, Vol. 89, Issue 11
Microscopic nature of coordination defects in amorphous silicon
journal, November 1989
- Stutzmann, Martin; Biegelsen, David K.
- Physical Review B, Vol. 40, Issue 14
Modeling solid-state chemistry: Interatomic potentials for multicomponent systems
journal, March 1989
- Tersoff, J.
- Physical Review B, Vol. 39, Issue 8
First-principles simulations of vibrational decay and lifetimes in -Si:H and -Si:D
journal, March 2017
- Atta-Fynn, Raymond; Drabold, David A.; Elliott, Stephen R.
- Physical Review B, Vol. 95, Issue 10
Density of amorphous Si
journal, January 1994
- Custer, J. S.; Thompson, Michael O.; Jacobson, D. C.
- Applied Physics Letters, Vol. 64, Issue 4
Atomistic simulation of nearly defect-free models of amorphous silicon: An information-based approach
journal, January 2019
- Limbu, Dil K.; Atta-Fynn, Raymond; Biswas, Parthapratim
- MRS Advances, Vol. 4, Issue 2
Thermal equilibration in doped amorphous silicon
journal, August 1986
- Street, R. A.; Kakalios, J.; Hayes, T. M.
- Physical Review B, Vol. 34, Issue 4
Role of Si–H bonding in a ‐Si:H metastability
journal, July 1996
- Godet, Christian; Roca i. Cabarrocas, Pere
- Journal of Applied Physics, Vol. 80, Issue 1
Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the “Chemical Annealing”
journal, April 1991
- Shirai, Hajime; Hanna, Jun-ichi; Shimizu, Isamu
- Japanese Journal of Applied Physics, Vol. 30, Issue Part 2, No. 4B
Mechanism of hydrogen-induced crystallization of amorphous silicon
journal, July 2002
- Sriraman, Saravanapriyan; Agarwal, Sumit; Aydil, Eray S.
- Nature, Vol. 418, Issue 6893
Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H
journal, February 1988
- Morigaki, Kazuo
- Japanese Journal of Applied Physics, Vol. 27, Issue Part 1, No. 2
Molecular-dynamics simulations of defect formation in hydrogenated amorphous silicon
journal, February 1992
- Kwon, I.; Biswas, R.; Soukoulis, C. M.
- Physical Review B, Vol. 45, Issue 7
Hydrogen-mediated creation and annihilation of strain in amorphous silicon
journal, February 1995
- Nickel, N. H.; Jackson, W. B.
- Physical Review B, Vol. 51, Issue 8
Realistic inversion of diffraction data for an amorphous solid: The case of amorphous silicon
journal, December 2016
- Pandey, Anup; Biswas, Parthapratim; Bhattarai, Bishal
- Physical Review B, Vol. 94, Issue 23
Hydrogen diffusion and mobile hydrogen in amorphous silicon
journal, September 1999
- Branz, Howard M.
- Physical Review B, Vol. 60, Issue 11
Realistic Atomistic Structure of Amorphous Silicon from Machine-Learning-Driven Molecular Dynamics
journal, May 2018
- Deringer, Volker L.; Bernstein, Noam; Bartók, Albert P.
- The Journal of Physical Chemistry Letters, Vol. 9, Issue 11
On the generation and annealing of dangling bond defects in hydrogenated amorphous silicon
journal, January 1988
- M�ller, G.
- Applied Physics A Solids and Surfaces, Vol. 45, Issue 1
Signal, noise, and readout considerations in the development of amorphous silicon photodiode arrays for radiotherapy and diagnostic x-ray imaging
conference, July 1991
- Antonuk, Larry E.; Boudry, John M.; Kim, Chung-Won
- Medical Imaging '91, San Jose, CA, SPIE Proceedings
Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
journal, November 1981
- Cody, G. D.; Tiedje, T.; Abeles, B.
- Physical Review Letters, Vol. 47, Issue 20
Vacancies and voids in hydrogenated amorphous silicon
journal, March 2003
- Smets, A. H. M.; Kessels, W. M. M.; van de Sanden, M. C. M.
- Applied Physics Letters, Vol. 82, Issue 10
Electron drift mobility in amorphous Si: H
journal, July 1986
- Marshall, J. M.; Street, R. A.; Thompson, M. J.
- Philosophical Magazine B, Vol. 54, Issue 1
Influence of disorder on the electronic structure of amorphous silicon
journal, April 1981
- Singh, Jasprit
- Physical Review B, Vol. 23, Issue 8
Hydrogen dynamics and light-induced structural changes in hydrogenated amorphous silicon
journal, August 2006
- Abtew, T. A.; Drabold, D. A.
- Physical Review B, Vol. 74, Issue 8
ISAACS – interactive structure analysis of amorphous and crystalline systems
journal, January 2010
- Le Roux, Sébastien; Petkov, Valeri
- Journal of Applied Crystallography, Vol. 43, Issue 1
First-principles study of hydrogenated amorphous silicon
journal, April 2009
- Jarolimek, K.; de Groot, R. A.; de Wijs, G. A.
- Physical Review B, Vol. 79, Issue 15
The physics of amorphous-silicon thin-film transistors
journal, December 1989
- Powell, M. J.
- IEEE Transactions on Electron Devices, Vol. 36, Issue 12, p. 2753-2763
Nearly hyperuniform network models of amorphous silicon
journal, June 2013
- Hejna, Miroslav; Steinhardt, Paul J.; Torquato, Salvatore
- Physical Review B, Vol. 87, Issue 24
Microstructure from joint analysis of experimental data and ab initio interactions: Hydrogenated amorphous silicon
journal, December 2014
- Biswas, Parthapratim; Drabold, D. A.; Atta-Fynn, Raymond
- Journal of Applied Physics, Vol. 116, Issue 24