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Title: Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si

Journal Article · · Physical Chemistry Chemical Physics. PCCP
DOI: https://doi.org/10.1039/C9CP01121H · OSTI ID:1525543

Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.

Sponsoring Organization:
USDOE
Grant/Contract Number:
EEC1041895
OSTI ID:
1525543
Journal Information:
Physical Chemistry Chemical Physics. PCCP, Journal Name: Physical Chemistry Chemical Physics. PCCP Vol. 21 Journal Issue: 24; ISSN 1463-9076
Publisher:
Royal Society of Chemistry (RSC)Copyright Statement
Country of Publication:
United Kingdom
Language:
English
Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

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