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Title: Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si

Abstract

Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.

Authors:
ORCiD logo [1];  [1];  [1]
  1. Arizona State University, School of Electrical, Computer and Energy Engineering, Tempe, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1525543
Grant/Contract Number:  
EEC1041895
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Chemistry Chemical Physics. PCCP (Print)
Additional Journal Information:
Journal Name: Physical Chemistry Chemical Physics. PCCP (Print) Journal Volume: 21 Journal Issue: 24; Journal ID: ISSN 1463-9076
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Vatan Meidanshahi, Reza, Bowden, Stuart, and Goodnick, Stephen M. Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si. United Kingdom: N. p., 2019. Web. doi:10.1039/C9CP01121H.
Vatan Meidanshahi, Reza, Bowden, Stuart, & Goodnick, Stephen M. Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si. United Kingdom. doi:10.1039/C9CP01121H.
Vatan Meidanshahi, Reza, Bowden, Stuart, and Goodnick, Stephen M. Wed . "Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si". United Kingdom. doi:10.1039/C9CP01121H.
@article{osti_1525543,
title = {Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si},
author = {Vatan Meidanshahi, Reza and Bowden, Stuart and Goodnick, Stephen M.},
abstractNote = {Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.},
doi = {10.1039/C9CP01121H},
journal = {Physical Chemistry Chemical Physics. PCCP (Print)},
number = 24,
volume = 21,
place = {United Kingdom},
year = {2019},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1039/C9CP01121H

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