Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si
Journal Article
·
· Physical Chemistry Chemical Physics. PCCP
- Arizona State University, School of Electrical, Computer and Energy Engineering, Tempe, USA
Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- EEC1041895
- OSTI ID:
- 1525543
- Journal Information:
- Physical Chemistry Chemical Physics. PCCP, Journal Name: Physical Chemistry Chemical Physics. PCCP Vol. 21 Journal Issue: 24; ISSN 1463-9076
- Publisher:
- Royal Society of Chemistry (RSC)Copyright Statement
- Country of Publication:
- United Kingdom
- Language:
- English
Cited by: 13 works
Citation information provided by
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