Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si
Abstract
Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.
- Authors:
-
[1];
- Arizona State University, School of Electrical, Computer and Energy Engineering, Tempe, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1525543
- Grant/Contract Number:
- EEC1041895
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Chemistry Chemical Physics. PCCP (Print)
- Additional Journal Information:
- Journal Name: Physical Chemistry Chemical Physics. PCCP (Print) Journal Volume: 21 Journal Issue: 24; Journal ID: ISSN 1463-9076
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Vatan Meidanshahi, Reza, Bowden, Stuart, and Goodnick, Stephen M. Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si. United Kingdom: N. p., 2019.
Web. doi:10.1039/C9CP01121H.
Vatan Meidanshahi, Reza, Bowden, Stuart, & Goodnick, Stephen M. Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si. United Kingdom. https://doi.org/10.1039/C9CP01121H
Vatan Meidanshahi, Reza, Bowden, Stuart, and Goodnick, Stephen M. Wed .
"Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si". United Kingdom. https://doi.org/10.1039/C9CP01121H.
@article{osti_1525543,
title = {Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si},
author = {Vatan Meidanshahi, Reza and Bowden, Stuart and Goodnick, Stephen M.},
abstractNote = {Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.},
doi = {10.1039/C9CP01121H},
journal = {Physical Chemistry Chemical Physics. PCCP (Print)},
number = 24,
volume = 21,
place = {United Kingdom},
year = {2019},
month = {6}
}
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https://doi.org/10.1039/C9CP01121H
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