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Title: Transport gap in SmB 6 protected against disorder

Abstract

The inverted resistance method was used in this study to extend the bulk resistivity of S m B 6 to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7–10 orders of magnitude, suggesting that S m B 6 is an ideal insulator that is immune to disorder.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1]; ORCiD logo [2];  [3]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Univ. of California, Irvine, CA (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1525533
Alternate Identifier(s):
OSTI ID: 1526955
Report Number(s):
LA-UR-18-28714
Journal ID: ISSN 0027-8424
Grant/Contract Number:  
89233218CNA000001; LDRD 20160085DR
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America; Journal ID: ISSN 0027-8424
Publisher:
National Academy of Sciences, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science

Citation Formats

Eo, Y. S., Rakoski, A., Lucien, J., Mihaliov, D., Kurdak, C., Ferrari Silveira Rosa, Priscila, and Fisk, Zachary. Transport gap in SmB6 protected against disorder. United States: N. p., 2019. Web. doi:10.1073/pnas.1901245116.
Eo, Y. S., Rakoski, A., Lucien, J., Mihaliov, D., Kurdak, C., Ferrari Silveira Rosa, Priscila, & Fisk, Zachary. Transport gap in SmB6 protected against disorder. United States. doi:10.1073/pnas.1901245116.
Eo, Y. S., Rakoski, A., Lucien, J., Mihaliov, D., Kurdak, C., Ferrari Silveira Rosa, Priscila, and Fisk, Zachary. Mon . "Transport gap in SmB6 protected against disorder". United States. doi:10.1073/pnas.1901245116.
@article{osti_1525533,
title = {Transport gap in SmB6 protected against disorder},
author = {Eo, Y. S. and Rakoski, A. and Lucien, J. and Mihaliov, D. and Kurdak, C. and Ferrari Silveira Rosa, Priscila and Fisk, Zachary},
abstractNote = {The inverted resistance method was used in this study to extend the bulk resistivity of S m B 6 to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7–10 orders of magnitude, suggesting that S m B 6 is an ideal insulator that is immune to disorder.},
doi = {10.1073/pnas.1901245116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1073/pnas.1901245116

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Works referenced in this record:

Topological Insulator Materials
journal, October 2013

  • Ando, Yoichi
  • Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001
  • DOI: 10.7566/JPSJ.82.102001