Transport gap in SmB 6 protected against disorder
Abstract
Significance The realization of modern electrical and optoelectrical devices is possible because of the successful control of point defects in semiconductors or narrow band-gapped insulators. Recently, a new subclass of these semiconductors has been discovered, so-called topological insulators (TIs). These 3D TIs harbor a unique 2D conduction layer on the surfaces that can be potentially applicable for novel quantum devices. The access of these surface states, however, is easily hindered by bulk conduction from unintentional defects. Surprisingly, by using a unique resistance measurement in a strongly correlated TI , we find that typical defect signatures of a semiconductor in electrical transport are absent in the bulk, including samples prepared with large samarium-to-boron off-stoichiometry.
- Authors:
-
[1];
- Department of Physics, University of Michigan, Ann Arbor, MI 48109-1040,
- Los Alamos National Laboratory, Los Alamos, NM 87545,
- Department of Physics and Astronomy, University of California, Irvine, CA 92697
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1525533
- Alternate Identifier(s):
- OSTI ID: 1526955
- Report Number(s):
- LA-UR-18-28714
Journal ID: ISSN 0027-8424
- Grant/Contract Number:
- LDRD 20160085DR; 89233218CNA000001
- Resource Type:
- Published Article
- Journal Name:
- Proceedings of the National Academy of Sciences of the United States of America
- Additional Journal Information:
- Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 116 Journal Issue: 26; Journal ID: ISSN 0027-8424
- Publisher:
- Proceedings of the National Academy of Sciences
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Material Science
Citation Formats
Eo, Yun Suk, Rakoski, Alexa, Lucien, Juniar, Mihaliov, Dmitri, Kurdak, Çağlıyan, Rosa, Priscila F. S., and Fisk, Zachary. Transport gap in SmB 6 protected against disorder. United States: N. p., 2019.
Web. doi:10.1073/pnas.1901245116.
Eo, Yun Suk, Rakoski, Alexa, Lucien, Juniar, Mihaliov, Dmitri, Kurdak, Çağlıyan, Rosa, Priscila F. S., & Fisk, Zachary. Transport gap in SmB 6 protected against disorder. United States. https://doi.org/10.1073/pnas.1901245116
Eo, Yun Suk, Rakoski, Alexa, Lucien, Juniar, Mihaliov, Dmitri, Kurdak, Çağlıyan, Rosa, Priscila F. S., and Fisk, Zachary. Mon .
"Transport gap in SmB 6 protected against disorder". United States. https://doi.org/10.1073/pnas.1901245116.
@article{osti_1525533,
title = {Transport gap in SmB 6 protected against disorder},
author = {Eo, Yun Suk and Rakoski, Alexa and Lucien, Juniar and Mihaliov, Dmitri and Kurdak, Çağlıyan and Rosa, Priscila F. S. and Fisk, Zachary},
abstractNote = {Significance The realization of modern electrical and optoelectrical devices is possible because of the successful control of point defects in semiconductors or narrow band-gapped insulators. Recently, a new subclass of these semiconductors has been discovered, so-called topological insulators (TIs). These 3D TIs harbor a unique 2D conduction layer on the surfaces that can be potentially applicable for novel quantum devices. The access of these surface states, however, is easily hindered by bulk conduction from unintentional defects. Surprisingly, by using a unique resistance measurement in a strongly correlated TI S m B 6 , we find that typical defect signatures of a semiconductor in electrical transport are absent in the S m B 6 bulk, including samples prepared with large samarium-to-boron off-stoichiometry.},
doi = {10.1073/pnas.1901245116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 26,
volume = 116,
place = {United States},
year = {2019},
month = {6}
}
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https://doi.org/10.1073/pnas.1901245116
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Works referenced in this record:
Topological Kondo Insulators
journal, March 2010
- Dzero, Maxim; Sun, Kai; Galitski, Victor
- Physical Review Letters, Vol. 104, Issue 10
Field-dependent heat transport in the Kondo insulator : Phonons scattered by magnetic impurities
journal, June 2018
- Boulanger, M-E.; Laliberté, F.; Dion, M.
- Physical Review B, Vol. 97, Issue 24
Screened moments and extrinsic in-gap states in samarium hexaboride
journal, April 2018
- Fuhrman, W. T.; Chamorro, J. R.; Alekseev, P. A.
- Nature Communications, Vol. 9, Issue 1
Nature of the low-temperature anomalies in the physical properties of the intermediate-valent compound SmB6
journal, March 1999
- Sluchanko, N. E.; Volkov, A. A.; Glushkov, V. V.
- Journal of Experimental and Theoretical Physics, Vol. 88, Issue 3
Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization
journal, July 2015
- Brahlek, Matthew; Koirala, Nikesh; Bansal, Namrata
- Solid State Communications, Vol. 215-216
Highly Asymmetric Nodal Semimetal in Bulk
journal, July 2018
- Harrison, N.
- Physical Review Letters, Vol. 121, Issue 2
Theory of dirty superconductors
journal, September 1959
- Anderson, P. W.
- Journal of Physics and Chemistry of Solids, Vol. 11, Issue 1-2
Intragap states in
journal, April 2000
- Sluchanko, N. E.; Ġlushkov, V. V.; Gorshunov, B. P.
- Physical Review B, Vol. 61, Issue 15
Surface Hall Effect and Nonlocal Transport in SmB6: Evidence for Surface Conduction
journal, November 2013
- Kim, D. J.; Thomas, S.; Grant, T.
- Scientific Reports, Vol. 3, Issue 1
Surface state reconstruction in ion-damaged
journal, February 2015
- Wakeham, N.; Wang, Y. Q.; Fisk, Z.
- Physical Review B, Vol. 91, Issue 8
Inverted Resistance Measurements as a Method for Characterizing the Bulk and Surface Conductivities of Three-Dimensional Topological Insulators
journal, April 2018
- Eo, Y. S.; Sun, K.; Kurdak, Ç.
- Physical Review Applied, Vol. 9, Issue 4
Excitons in topological Kondo insulators: Theory of thermodynamic and transport anomalies in
journal, March 2017
- Knolle, Johannes; Cooper, Nigel R.
- Physical Review Letters, Vol. 118, Issue 9
One-dimensional edge state transport in a topological Kondo insulator
journal, November 2015
- Nakajima, Yasuyuki; Syers, Paul; Wang, Xiangfeng
- Nature Physics, Vol. 12, Issue 3
Unconventional Fermi surface in an insulating state
journal, July 2015
- Tan, B. S.; Hsu, Y. - T.; Zeng, B.
- Science, Vol. 349, Issue 6245
Partial Lattice Defects in Higher-Order Topological Insulators
journal, December 2019
- Queiroz, Raquel; Fulga, Ion Cosma; Avraham, Nurit
- Physical Review Letters, Vol. 123, Issue 26
Magnetotransport measurements of the surface states of samarium hexaboride using Corbino structures
journal, September 2015
- Wolgast, S.; Eo, Y. S.; Öztürk, T.
- Physical Review B, Vol. 92, Issue 11
Topological Band Theory for Non-Hermitian Hamiltonians
journal, April 2018
- Shen, Huitao; Zhen, Bo; Fu, Liang
- Physical Review Letters, Vol. 120, Issue 14
Topological Insulator Materials
journal, October 2013
- Ando, Yoichi
- Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001
Weak antilocalization and linear magnetoresistance in the surface state of
journal, November 2016
- Thomas, S.; Kim, D. J.; Chung, S. B.
- Physical Review B, Vol. 94, Issue 20
Mixed-valence insulators with neutral Fermi surfaces
journal, May 2018
- Chowdhury, Debanjan; Sodemann, Inti; Senthil, T.
- Nature Communications, Vol. 9, Issue 1
Tuning Bulk and Surface Conduction in the Proposed Topological Kondo Insulator
journal, March 2015
- Syers, Paul; Kim, Dohun; Fuhrer, Michael S.
- Physical Review Letters, Vol. 114, Issue 9
Anomalous three-dimensional bulk ac conduction within the Kondo gap of single crystals
journal, October 2016
- Laurita, N. J.; Morris, C. M.; Koohpayeh, S. M.
- Physical Review B, Vol. 94, Issue 16
SmB 6 : A Promising Candidate for a Topological Insulator
journal, December 2011
- Takimoto, Tetsuya
- Journal of the Physical Society of Japan, Vol. 80, Issue 12
Quantum Oscillation in Narrow-Gap Topological Insulators
journal, January 2016
- Zhang, Long; Song, Xue-Yang; Wang, Fa
- Physical Review Letters, Vol. 116, Issue 4
Low-temperature surface conduction in the Kondo insulator SmB
journal, November 2013
- Wolgast, Steven; Kurdak, Çağlıyan; Sun, Kai
- Physical Review B, Vol. 88, Issue 18
Kondo Breakdown and Quantum Oscillations in
journal, January 2016
- Erten, Onur; Ghaemi, Pouyan; Coleman, Piers
- Physical Review Letters, Vol. 116, Issue 4
Breakdown of the Kondo insulating state in by introducing Sm vacancies
journal, August 2016
- Valentine, Michael E.; Koohpayeh, Seyed; Phelan, W. Adam
- Physical Review B, Vol. 94, Issue 7
Mechanisms for anomalous properties in SmB6
journal, February 1983
- Kasuya, T.; Kasaya, M.; Takegahara, K.
- Journal of Magnetism and Magnetic Materials, Vol. 31-34
Magnetic and defect probes of the SmB 6 surface state
journal, November 2018
- Jiao, Lin; Rößler, Sahana; Kasinathan, Deepa
- Science Advances, Vol. 4, Issue 11
One-dimensional topologically protected modes in topological insulators with lattice dislocations
journal, March 2009
- Ran, Ying; Zhang, Yi; Vishwanath, Ashvin
- Nature Physics, Vol. 5, Issue 4
Skyrme Insulators: Insulators at the Brink of Superconductivity
journal, August 2017
- Erten, Onur; Chang, Po-Yao; Coleman, Piers
- Physical Review Letters, Vol. 119, Issue 5
Large low-temperature Hall effect and resistivity in mixed-valent Sm
journal, December 1979
- Allen, J. W.; Batlogg, B.; Wachter, P.
- Physical Review B, Vol. 20, Issue 12