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Title: Transport gap in SmB 6 protected against disorder

Abstract

The inverted resistance method was used in this study to extend the bulk resistivity of S m B 6 to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7–10 orders of magnitude, suggesting that S m B 6 is an ideal insulator that is immune to disorder.

Authors:
ORCiD logo; ; ; ; ; ;
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1525533
Alternate Identifier(s):
OSTI ID: 1526955
Report Number(s):
[LA-UR-18-28714]
[Journal ID: ISSN 0027-8424; /pnas/116/26/12638.atom]
Grant/Contract Number:  
[LDRD 20160085DR; 89233218CNA000001]
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
[Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 116 Journal Issue: 26]; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science

Citation Formats

Eo, Yun Suk, Rakoski, Alexa, Lucien, Juniar, Mihaliov, Dmitri, Kurdak, Çağlıyan, Rosa, Priscila F. S., and Fisk, Zachary. Transport gap in SmB 6 protected against disorder. United States: N. p., 2019. Web. doi:10.1073/pnas.1901245116.
Eo, Yun Suk, Rakoski, Alexa, Lucien, Juniar, Mihaliov, Dmitri, Kurdak, Çağlıyan, Rosa, Priscila F. S., & Fisk, Zachary. Transport gap in SmB 6 protected against disorder. United States. doi:10.1073/pnas.1901245116.
Eo, Yun Suk, Rakoski, Alexa, Lucien, Juniar, Mihaliov, Dmitri, Kurdak, Çağlıyan, Rosa, Priscila F. S., and Fisk, Zachary. Mon . "Transport gap in SmB 6 protected against disorder". United States. doi:10.1073/pnas.1901245116.
@article{osti_1525533,
title = {Transport gap in SmB 6 protected against disorder},
author = {Eo, Yun Suk and Rakoski, Alexa and Lucien, Juniar and Mihaliov, Dmitri and Kurdak, Çağlıyan and Rosa, Priscila F. S. and Fisk, Zachary},
abstractNote = {The inverted resistance method was used in this study to extend the bulk resistivity of S m B 6 to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7–10 orders of magnitude, suggesting that S m B 6 is an ideal insulator that is immune to disorder.},
doi = {10.1073/pnas.1901245116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = [26],
volume = [116],
place = {United States},
year = {2019},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1073/pnas.1901245116

Citation Metrics:
Cited by: 3 works
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