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Title: Strain engineering 4H-SiC with ion beams

Abstract

Single crystals of 4H-SiC irradiated with 900 keV Si and 21 MeV Ni ions separately and sequentially were examined by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC irradiated with 900 keV Si ions to a fluence of 6.3 × 10 14 ions/cm 2 experiences 7.3% strain over the depth of 650 nm. Strain relaxation from ionization-induced annealing was directly studied due to subsequent irradiation with 21 MeV Ni ions to a fluence of 2 × 10 14 ions/cm 2. These competitive processes suggest the use of ion irradiation to create a specific strain state in 4H-SiC, particularly in films.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [1];  [3];  [4]; ORCiD logo [5]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States)
  3. Institut de Recherche sur les Céramiques (IRCER), Limoges (France)
  4. Univ. Paris-Sud, Orsay (France)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
OSTI Identifier:
1524859
Alternate Identifier(s):
OSTI ID: 1525512
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 22; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhang, Fuxiang, Tong, Yang, Xue, Haizhou, Keum, Jong K., Zhang, Yanwen, Boulle, Alexandre, Debelle, Aurelien, and Weber, William J. Strain engineering 4H-SiC with ion beams. United States: N. p., 2019. Web. doi:10.1063/1.5109226.
Zhang, Fuxiang, Tong, Yang, Xue, Haizhou, Keum, Jong K., Zhang, Yanwen, Boulle, Alexandre, Debelle, Aurelien, & Weber, William J. Strain engineering 4H-SiC with ion beams. United States. doi:10.1063/1.5109226.
Zhang, Fuxiang, Tong, Yang, Xue, Haizhou, Keum, Jong K., Zhang, Yanwen, Boulle, Alexandre, Debelle, Aurelien, and Weber, William J. Wed . "Strain engineering 4H-SiC with ion beams". United States. doi:10.1063/1.5109226.
@article{osti_1524859,
title = {Strain engineering 4H-SiC with ion beams},
author = {Zhang, Fuxiang and Tong, Yang and Xue, Haizhou and Keum, Jong K. and Zhang, Yanwen and Boulle, Alexandre and Debelle, Aurelien and Weber, William J.},
abstractNote = {Single crystals of 4H-SiC irradiated with 900 keV Si and 21 MeV Ni ions separately and sequentially were examined by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC irradiated with 900 keV Si ions to a fluence of 6.3 × 1014 ions/cm2 experiences 7.3% strain over the depth of 650 nm. Strain relaxation from ionization-induced annealing was directly studied due to subsequent irradiation with 21 MeV Ni ions to a fluence of 2 × 1014 ions/cm2. These competitive processes suggest the use of ion irradiation to create a specific strain state in 4H-SiC, particularly in films.},
doi = {10.1063/1.5109226},
journal = {Applied Physics Letters},
number = 22,
volume = 114,
place = {United States},
year = {2019},
month = {6}
}

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