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Title: Creating localized plasma waves by ionization of doped semiconductors

Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Grant/Contract Number:  
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review E
Additional Journal Information:
Journal Name: Physical Review E Journal Volume: 99 Journal Issue: 6; Journal ID: ISSN 2470-0045
American Physical Society
Country of Publication:
United States

Citation Formats

Qu, Kenan, and Fisch, Nathaniel J. Creating localized plasma waves by ionization of doped semiconductors. United States: N. p., 2019. Web.
Qu, Kenan, & Fisch, Nathaniel J. Creating localized plasma waves by ionization of doped semiconductors. United States.
Qu, Kenan, and Fisch, Nathaniel J. Tue . "Creating localized plasma waves by ionization of doped semiconductors". United States.
title = {Creating localized plasma waves by ionization of doped semiconductors},
author = {Qu, Kenan and Fisch, Nathaniel J.},
abstractNote = {},
doi = {10.1103/PhysRevE.99.063201},
journal = {Physical Review E},
number = 6,
volume = 99,
place = {United States},
year = {2019},
month = {6}

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