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Title: Creating localized plasma waves by ionization of doped semiconductors

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1524468
Grant/Contract Number:  
NA0003871
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review E
Additional Journal Information:
Journal Name: Physical Review E Journal Volume: 99 Journal Issue: 6; Journal ID: ISSN 2470-0045
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Qu, Kenan, and Fisch, Nathaniel J. Creating localized plasma waves by ionization of doped semiconductors. United States: N. p., 2019. Web. doi:10.1103/PhysRevE.99.063201.
Qu, Kenan, & Fisch, Nathaniel J. Creating localized plasma waves by ionization of doped semiconductors. United States. doi:10.1103/PhysRevE.99.063201.
Qu, Kenan, and Fisch, Nathaniel J. Tue . "Creating localized plasma waves by ionization of doped semiconductors". United States. doi:10.1103/PhysRevE.99.063201.
@article{osti_1524468,
title = {Creating localized plasma waves by ionization of doped semiconductors},
author = {Qu, Kenan and Fisch, Nathaniel J.},
abstractNote = {},
doi = {10.1103/PhysRevE.99.063201},
journal = {Physical Review E},
number = 6,
volume = 99,
place = {United States},
year = {2019},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevE.99.063201

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