Properties of in-plane graphene/MoS2 heterojunctions
Abstract
The graphene/MoS2 heterojunction formed by joining the two components laterally in a single plane promises to exhibit a low-resistance contact according to the Schottky–Mott rule. Here we provide an atomic-scale description of the structural, electronic, and magnetic properties of this type of junction. We first identify the energetically favorable structures in which the preference of forming C–S or C–Mo bonds at the boundary depends on the chemical conditions. We find that significant non-carrier related charge transfer between graphene and undoped MoS2 is localized at the boundary. We show that the abundant 1D boundary states substantially pin the Fermi level in the lateral contact between graphene and MoS2, in close analogy to the effect of 2D interfacial states in the contacts between 3D materials. Furthermore, we propose specific ways in which these effects can be exploited to achieve spin-polarized currents.
- Authors:
-
- Harvard Univ., Cambridge, MA (United States). School of Engineering and Applied Sciences (SEAS), Dept. of Physics; Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, ICQD
- Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry and Chemical Biology
- Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, ICQD
- Harvard Univ., Cambridge, MA (United States). School of Engineering and Applied Sciences (SEAS), Dept. of Physics
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1523648
- Resource Type:
- Accepted Manuscript
- Journal Name:
- 2D Materials
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 4; Journal ID: ISSN 2053-1583
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Chen, Wei, Yang, Yuan, Zhang, Zhenyu, and Kaxiras, Efthimios. Properties of in-plane graphene/MoS2 heterojunctions. United States: N. p., 2017.
Web. doi:10.1088/2053-1583/aa8313.
Chen, Wei, Yang, Yuan, Zhang, Zhenyu, & Kaxiras, Efthimios. Properties of in-plane graphene/MoS2 heterojunctions. United States. https://doi.org/10.1088/2053-1583/aa8313
Chen, Wei, Yang, Yuan, Zhang, Zhenyu, and Kaxiras, Efthimios. Thu .
"Properties of in-plane graphene/MoS2 heterojunctions". United States. https://doi.org/10.1088/2053-1583/aa8313. https://www.osti.gov/servlets/purl/1523648.
@article{osti_1523648,
title = {Properties of in-plane graphene/MoS2 heterojunctions},
author = {Chen, Wei and Yang, Yuan and Zhang, Zhenyu and Kaxiras, Efthimios},
abstractNote = {The graphene/MoS2 heterojunction formed by joining the two components laterally in a single plane promises to exhibit a low-resistance contact according to the Schottky–Mott rule. Here we provide an atomic-scale description of the structural, electronic, and magnetic properties of this type of junction. We first identify the energetically favorable structures in which the preference of forming C–S or C–Mo bonds at the boundary depends on the chemical conditions. We find that significant non-carrier related charge transfer between graphene and undoped MoS2 is localized at the boundary. We show that the abundant 1D boundary states substantially pin the Fermi level in the lateral contact between graphene and MoS2, in close analogy to the effect of 2D interfacial states in the contacts between 3D materials. Furthermore, we propose specific ways in which these effects can be exploited to achieve spin-polarized currents.},
doi = {10.1088/2053-1583/aa8313},
journal = {2D Materials},
number = 4,
volume = 4,
place = {United States},
year = {Thu Aug 17 00:00:00 EDT 2017},
month = {Thu Aug 17 00:00:00 EDT 2017}
}
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