Water‐Assisted Liftoff of Polycrystalline CdS/CdTe Thin Films Using Heterogeneous Interfacial Engineering

Magginetti, David J.; Aguiar, Jeffery A.; Winger, Joshua R.; Scarpulla, Michael A.; Pourshaban, Erfan; Yoon, Heayoung P.

doi:10.1002/admi.201900300

Title: Water‐Assisted Liftoff of Polycrystalline CdS/CdTe Thin Films Using Heterogeneous Interfacial Engineering

Journal Article · 26 May 2019 · Advanced Materials Interfaces

DOI: https://doi.org/10.1002/admi.201900300 · OSTI ID:1515801

Magginetti, David J. ^[1]; Aguiar, Jeffery A. ^[2]; Winger, Joshua R. ^[1]; Scarpulla, Michael A. ^[3]; Pourshaban, Erfan ^[4];

^[3]

Materials Science and Engineering University of Utah Salt Lake City UT 84102 USA
Materials Science and Engineering University of Utah Salt Lake City UT 84102 USA, Nuclear Materials Department Idaho National Laboratory Idaho Falls ID 83415 USA
Materials Science and Engineering University of Utah Salt Lake City UT 84102 USA, Electrical and Computer Engineering University of Utah Salt Lake City UT 84102 USA
Electrical and Computer Engineering University of Utah Salt Lake City UT 84102 USA

Abstract Recent advances in device design and process optimizations have enabled the production of CdTe devices on flexible substrates, but the necessary high‐temperature processing (>450 °C) to recrystallize grains limits the use of alternative lightweight substrates. Here, a new synthesis method is reported to create a freestanding CdS/CdTe film by combining high‐temperature depositions (CdS/CdTe on Si/SiO ₂ ) and a simple lift‐off process in a water environment at room temperature. Analysis of the results indicate that the delamination is facilitated by the innate lattice mismatch as well as the presence of an unexpected Te‐rich layer (≈20 nm), which accumulates on the SiO ₂ surface. High‐resolution electron microscopy and spectroscopy measurements confirm that the CdS/CdTe film is physically liberated from the substrate without leaving any residue, while also preserving their initial structural and compositional properties.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 1515801

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 14 Vol. 6; ISSN 2196-7350

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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