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Title: Simulation of sub-nm carrier profiling by scanning frequency comb microscopy

Authors:
ORCiD logo [1];  [1]
  1. NewPath Research L.L.C., Salt Lake City, Utah 84115, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1515096
Grant/Contract Number:  
SC0006339
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 9 Journal Issue: 5; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Hagmann, M. J., and Wiedemeier, J. Simulation of sub-nm carrier profiling by scanning frequency comb microscopy. United States: N. p., 2019. Web. doi:10.1063/1.5092282.
Hagmann, M. J., & Wiedemeier, J. Simulation of sub-nm carrier profiling by scanning frequency comb microscopy. United States. doi:10.1063/1.5092282.
Hagmann, M. J., and Wiedemeier, J. Wed . "Simulation of sub-nm carrier profiling by scanning frequency comb microscopy". United States. doi:10.1063/1.5092282.
@article{osti_1515096,
title = {Simulation of sub-nm carrier profiling by scanning frequency comb microscopy},
author = {Hagmann, M. J. and Wiedemeier, J.},
abstractNote = {},
doi = {10.1063/1.5092282},
journal = {AIP Advances},
number = 5,
volume = 9,
place = {United States},
year = {2019},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5092282

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