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Title: Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics

Abstract

Mg xZn 1-xO (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current-voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl 2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29 mA/cm 2 and efficiency above 16% are demonstrated.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [2];  [2]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [2];  [2];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado State Univ., Fort Collins, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1514844
Report Number(s):
NREL/JA-5K00-72393
Journal ID: ISSN 2156-3381
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 9; Journal Issue: 3; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; cadmium telluride; MgxZn1-xO; thin film solar cells; conduction band offset; interface

Citation Formats

Ablekim, Tursun, Perkins, Craig, Zheng, Xin, Reich, Carey, Swanson, Drew, Colegrove, Eric, Duenow, Joel N., Albin, David, Nanayakkara, Sanjini, Reese, Matthew O., Shimpi, Tushar, Sampath, Walajabad, and Metzger, Wyatt K. Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics. United States: N. p., 2019. Web. doi:10.1109/JPHOTOV.2018.2877982.
Ablekim, Tursun, Perkins, Craig, Zheng, Xin, Reich, Carey, Swanson, Drew, Colegrove, Eric, Duenow, Joel N., Albin, David, Nanayakkara, Sanjini, Reese, Matthew O., Shimpi, Tushar, Sampath, Walajabad, & Metzger, Wyatt K. Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics. United States. doi:10.1109/JPHOTOV.2018.2877982.
Ablekim, Tursun, Perkins, Craig, Zheng, Xin, Reich, Carey, Swanson, Drew, Colegrove, Eric, Duenow, Joel N., Albin, David, Nanayakkara, Sanjini, Reese, Matthew O., Shimpi, Tushar, Sampath, Walajabad, and Metzger, Wyatt K. Fri . "Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics". United States. doi:10.1109/JPHOTOV.2018.2877982.
@article{osti_1514844,
title = {Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics},
author = {Ablekim, Tursun and Perkins, Craig and Zheng, Xin and Reich, Carey and Swanson, Drew and Colegrove, Eric and Duenow, Joel N. and Albin, David and Nanayakkara, Sanjini and Reese, Matthew O. and Shimpi, Tushar and Sampath, Walajabad and Metzger, Wyatt K.},
abstractNote = {MgxZn1-xO (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current-voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29 mA/cm2 and efficiency above 16% are demonstrated.},
doi = {10.1109/JPHOTOV.2018.2877982},
journal = {IEEE Journal of Photovoltaics},
number = 3,
volume = 9,
place = {United States},
year = {2019},
month = {2}
}

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This content will become publicly available on February 15, 2020
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