Quantification of Charge Transfer at the Interfaces of Oxide Thin Films
- Brookhaven National Lab. (BNL), Upton, NY (United States). Dept. of Condensed Matter Physics and Materials Science
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
The interfacial electronic distribution in transition metal oxide thin films is crucial to their interfacial physical or chemical behaviors. Core-loss electron energy-loss spectroscopy (EELS) may potentially give valuable information of local electronic density of state at high spatial resolution. Here, we studied the electronic properties at the interface of Pb(Zr0.2Ti0.8)O3 (PZT)/4.8-nm La0.8Sr0.2MnO3 (LSMO)/SrTiO3 (STO) using valance-EELS with a scanning transmission electron microscope (STEM). Modeled with dielectric function theory, the charge transfer in the vicinity of the interfaces of PZT/LSMO and LSMO/STO were determined from the shifts of plasma peaks of VEELS, agreeing with theoretical prediction. Our work demonstrates that VEELS method enables a high-efficient quantification of the charge transfer at interfaces, shedding the light on the charge transfer issues at heterogenous interfaces in physical and chemical devices.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1513058
- Alternate ID(s):
- OSTI ID: 1513225
- Report Number(s):
- BNL-211623-2019-JAAM
- Journal Information:
- Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment, and General Theory, Vol. 123, Issue 21; ISSN 1089-5639
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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