DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quantification of Charge Transfer at the Interfaces of Oxide Thin Films

Journal Article · · Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment, and General Theory

The interfacial electronic distribution in transition metal oxide thin films is crucial to their interfacial physical or chemical behaviors. Core-loss electron energy-loss spectroscopy (EELS) may potentially give valuable information of local electronic density of state at high spatial resolution. Here, we studied the electronic properties at the interface of Pb(Zr0.2Ti0.8)O3 (PZT)/4.8-nm La0.8Sr0.2MnO3 (LSMO)/SrTiO3 (STO) using valance-EELS with a scanning transmission electron microscope (STEM). Modeled with dielectric function theory, the charge transfer in the vicinity of the interfaces of PZT/LSMO and LSMO/STO were determined from the shifts of plasma peaks of VEELS, agreeing with theoretical prediction. Our work demonstrates that VEELS method enables a high-efficient quantification of the charge transfer at interfaces, shedding the light on the charge transfer issues at heterogenous interfaces in physical and chemical devices.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE
Grant/Contract Number:
SC0012704
OSTI ID:
1513058
Alternate ID(s):
OSTI ID: 1513225
Report Number(s):
BNL-211623-2019-JAAM
Journal Information:
Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment, and General Theory, Vol. 123, Issue 21; ISSN 1089-5639
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Figures / Tables (5)