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Title: Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.

Abstract

Epitaxial (111) Mg0 films were prepared on (0001) AlxGa1-xN via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of Mg0 to AlxGa1-xN were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and1.05 ± 0.09 eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between Mg0 and AlxGa1-xN provide a > 1 eV barrier height to the semiconductor.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1512899
Alternate Identifier(s):
OSTI ID: 1229658
Report Number(s):
SAND-2015-8002J
Journal ID: ISSN 0003-6951; 665186
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Paisley, Elizabeth A., Brumbach, Michael T., Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., and Ihlefeld, Jon F. Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.. United States: N. p., 2015. Web. doi:10.1063/1.4930309.
Paisley, Elizabeth A., Brumbach, Michael T., Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., & Ihlefeld, Jon F. Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.. United States. doi:10.1063/1.4930309.
Paisley, Elizabeth A., Brumbach, Michael T., Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., and Ihlefeld, Jon F. Wed . "Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.". United States. doi:10.1063/1.4930309. https://www.osti.gov/servlets/purl/1512899.
@article{osti_1512899,
title = {Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.},
author = {Paisley, Elizabeth A. and Brumbach, Michael T. and Allerman, Andrew A. and Atcitty, Stanley and Baca, Albert G. and Armstrong, Andrew M. and Kaplar, Robert J. and Ihlefeld, Jon F.},
abstractNote = {Epitaxial (111) Mg0 films were prepared on (0001) AlxGa1-xN via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of Mg0 to AlxGa1-xN were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and1.05 ± 0.09 eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between Mg0 and AlxGa1-xN provide a > 1 eV barrier height to the semiconductor.},
doi = {10.1063/1.4930309},
journal = {Applied Physics Letters},
number = 10,
volume = 107,
place = {United States},
year = {2015},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 4 works
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Figures / Tables:

Table I Table I: Measured valence band offsets (VBO) and calculated conduction band offsets (CBO) for MgO) to each substrate as a function of aluminum content in the AlxGa1-xN substrate.

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