Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.
Abstract
Epitaxial (111) Mg0 films were prepared on (0001) AlxGa1-xN via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of Mg0 to AlxGa1-xN were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and1.05 ± 0.09 eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between Mg0 and AlxGa1-xN provide a > 1 eV barrier height to the semiconductor.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1512899
- Alternate Identifier(s):
- OSTI ID: 1229658
- Report Number(s):
- SAND-2015-8002J
Journal ID: ISSN 0003-6951; 665186
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 10; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Paisley, Elizabeth A., Brumbach, Michael T., Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., and Ihlefeld, Jon F. Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.. United States: N. p., 2015.
Web. doi:10.1063/1.4930309.
Paisley, Elizabeth A., Brumbach, Michael T., Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., & Ihlefeld, Jon F. Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.. United States. https://doi.org/10.1063/1.4930309
Paisley, Elizabeth A., Brumbach, Michael T., Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., and Ihlefeld, Jon F. Wed .
"Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.". United States. https://doi.org/10.1063/1.4930309. https://www.osti.gov/servlets/purl/1512899.
@article{osti_1512899,
title = {Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.},
author = {Paisley, Elizabeth A. and Brumbach, Michael T. and Allerman, Andrew A. and Atcitty, Stanley and Baca, Albert G. and Armstrong, Andrew M. and Kaplar, Robert J. and Ihlefeld, Jon F.},
abstractNote = {Epitaxial (111) Mg0 films were prepared on (0001) AlxGa1-xN via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of Mg0 to AlxGa1-xN were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and1.05 ± 0.09 eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between Mg0 and AlxGa1-xN provide a > 1 eV barrier height to the semiconductor.},
doi = {10.1063/1.4930309},
journal = {Applied Physics Letters},
number = 10,
volume = 107,
place = {United States},
year = {Wed Sep 09 00:00:00 EDT 2015},
month = {Wed Sep 09 00:00:00 EDT 2015}
}
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Cited by: 11 works
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Figures / Tables:
Table I: Measured valence band offsets (VBO) and calculated conduction band offsets (CBO) for MgO) to each substrate as a function of aluminum content in the AlxGa1-xN substrate.
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Works referenced in this record:
Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy
journal, October 2007
- Craft, H. S.; Collazo, R.; Losego, M. D.
- Journal of Applied Physics, Vol. 102, Issue 7
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
journal, December 2004
- Allerman, A. A.; Crawford, M. H.; Fischer, A. J.
- Journal of Crystal Growth, Vol. 272, Issue 1-4, p. 227-241
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy
journal, February 2009
- Yang, A. L.; Song, H. P.; Liu, X. L.
- Applied Physics Letters, Vol. 94, Issue 5
Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy
journal, May 1996
- Waldrop, J. R.; Grant, R. W.
- Applied Physics Letters, Vol. 68, Issue 20
Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states
journal, September 2011
- Belabbes, A.; de Carvalho, L. C.; Schleife, A.
- Physical Review B, Vol. 84, Issue 12
The band-gap bowing of AlxGa1−xN alloys
journal, May 1999
- Lee, S. R.; Wright, A. F.; Crawford, M. H.
- Applied Physics Letters, Vol. 74, Issue 22
Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System
journal, December 2006
- Chen, J. -J.; Hlad, M.; Gerger, A. P.
- Journal of Electronic Materials, Vol. 36, Issue 4
Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy
journal, January 2006
- Chen, J. -J.; Gila, B. P.; Hlad, M.
- Applied Physics Letters, Vol. 88, Issue 4
Band offsets of high K gate oxides on high mobility semiconductors
journal, December 2006
- Robertson, J.; Falabretti, B.
- Materials Science and Engineering: B, Vol. 135, Issue 3
MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy
journal, May 2006
- Craft, H. S.; Ihlefeld, J. F.; Losego, M. D.
- Applied Physics Letters, Vol. 88, Issue 21
Epitaxial calcium oxide films deposited on gallium nitride surfaces
journal, January 2007
- Losego, Mark D.; Mita, Seiji; Collazo, Ramon
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 3
Smooth cubic commensurate oxides on gallium nitride
journal, February 2014
- Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.
- Journal of Applied Physics, Vol. 115, Issue 6
Band offsets in the Sc2O3∕GaN heterojunction system
journal, April 2006
- Chen, J. -J.; Gila, B. P.; Hlad, M.
- Applied Physics Letters, Vol. 88, Issue 14
Schottky contact formation on polar and non-polar AlN
journal, November 2014
- Reddy, Pramod; Bryan, Isaac; Bryan, Zachary
- Journal of Applied Physics, Vol. 116, Issue 19
AlGaN composition dependence of the band offsets for epitaxial Gd 2 O 3 /Al x Ga 1− x N (0 ≤ x ≤ 0.67) heterostructures
journal, July 2014
- Ihlefeld, Jon F.; Brumbach, Michael; Allerman, Andrew A.
- Applied Physics Letters, Vol. 105, Issue 1
Band offsets of La 2 O 3 on (0001) GaN grown by reactive molecular-beam epitaxy
journal, April 2013
- Ihlefeld, Jon F.; Brumbach, Michael; Atcitty, Stanley
- Applied Physics Letters, Vol. 102, Issue 16
Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations
journal, January 2009
- Schleife, A.; Fuchs, F.; Rödl, C.
- Applied Physics Letters, Vol. 94, Issue 1
Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN
journal, January 2005
- Hansen, P. J.; Vaithyanathan, V.; Wu, Y.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 2
Interface chemistry of metal‐GaAs Schottky‐barrier contacts
journal, May 1979
- Waldrop, J. R.; Grant, R. W.
- Applied Physics Letters, Vol. 34, Issue 10
Band offset measurements of the Si3N4/GaN (0001) interface
journal, September 2003
- Cook, T. E.; Fulton, C. C.; Mecouch, W. J.
- Journal of Applied Physics, Vol. 94, Issue 6
Spectroscopic analysis of the epitaxial CaO (111)–GaN (0002) interface
journal, February 2008
- Craft, H. S.; Collazo, R.; Losego, M. D.
- Applied Physics Letters, Vol. 92, Issue 8
Band offsets, Schottky barrier heights, and their effects on electronic devices
journal, September 2013
- Robertson, John
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5
Surface oxide relationships to band bending in GaN
journal, January 2006
- Garcia, Michael A.; Wolter, Scott D.; Kim, Tong-Ho
- Applied Physics Letters, Vol. 88, Issue 1
Formation and Schottky barrier height of metal contacts to β‐SiC
journal, February 1990
- Waldrop, J. R.; Grant, R. W.
- Applied Physics Letters, Vol. 56, Issue 6
Surfactant assisted growth of MgO films on GaN
journal, August 2012
- Paisley, E. A.; Shelton, T. C.; Mita, S.
- Applied Physics Letters, Vol. 101, Issue 9
Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN
journal, February 2011
- Craft, H. S.; Rice, A. L.; Collazo, R.
- Applied Physics Letters, Vol. 98, Issue 8
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
journal, February 2000
- Khan, M. A.; Hu, X.; Sumin, G.
- IEEE Electron Device Letters, Vol. 21, Issue 2
Works referencing / citing this record:
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
journal, December 2017
- Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.
- Advanced Electronic Materials, Vol. 4, Issue 1
Energy band offsets of dielectrics on InGaZnO 4
journal, June 2017
- Hays, David C.; Gila, B. P.; Pearton, S. J.
- Applied Physics Reviews, Vol. 4, Issue 2
Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces
journal, February 2018
- Paisley, Elizabeth A.; Brumbach, Michael T.; Shelton, Christopher T.
- Applied Physics Letters, Vol. 112, Issue 9
Band alignments of sputtered dielectrics on GaN
journal, December 2019
- Supardan, S. N.; Das, P.; Major, J. D.
- Journal of Physics D: Applied Physics, Vol. 53, Issue 7
Figures / Tables found in this record:
Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.