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Title: Strain-fluctuation-induced near quantization of valley Hall conductivity in graphene systems

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1512548
Grant/Contract Number:  
Pro-QM EFRC (DE-SC0019443)
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 99 Journal Issue: 20; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Shan, Wen-Yu, and Xiao, Di. Strain-fluctuation-induced near quantization of valley Hall conductivity in graphene systems. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.99.205416.
Shan, Wen-Yu, & Xiao, Di. Strain-fluctuation-induced near quantization of valley Hall conductivity in graphene systems. United States. doi:10.1103/PhysRevB.99.205416.
Shan, Wen-Yu, and Xiao, Di. Tue . "Strain-fluctuation-induced near quantization of valley Hall conductivity in graphene systems". United States. doi:10.1103/PhysRevB.99.205416.
@article{osti_1512548,
title = {Strain-fluctuation-induced near quantization of valley Hall conductivity in graphene systems},
author = {Shan, Wen-Yu and Xiao, Di},
abstractNote = {},
doi = {10.1103/PhysRevB.99.205416},
journal = {Physical Review B},
number = 20,
volume = 99,
place = {United States},
year = {2019},
month = {5}
}

Journal Article:
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This content will become publicly available on May 13, 2020
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Works referenced in this record:

The structure of suspended graphene sheets
journal, March 2007

  • Meyer, Jannik C.; Geim, A. K.; Katsnelson, M. I.
  • Nature, Vol. 446, Issue 7131, p. 60-63
  • DOI: 10.1038/nature05545

Electronic transport in two-dimensional graphene
journal, May 2011

  • Das Sarma, S.; Adam, Shaffique; Hwang, E. H.
  • Reviews of Modern Physics, Vol. 83, Issue 2, p. 407-470
  • DOI: 10.1103/RevModPhys.83.407

The electronic properties of graphene
journal, January 2009

  • Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
  • Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
  • DOI: 10.1103/RevModPhys.81.109

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172