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Title: Addition of the Lewis Acid Zn(C 6 F 5 ) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm 2 V −1 s −1

Authors:
 [1]; ORCiD logo [2];  [3];  [1]; ORCiD logo [1];  [4]; ORCiD logo [5]; ORCiD logo [5];  [1];  [4]; ORCiD logo [5]; ORCiD logo [1]
  1. Division of Physical Sciences and EngineeringKing Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi Arabia
  2. Department of PhysicsNational Technical University of Athens Athens GR‐15780 Greece
  3. Brookhaven National Lab Upton NY 11973 USA
  4. Core LabsKing Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi Arabia
  5. Department of Chemistry and Centre for Plastic ElectronicsImperial College London South Kensington SW7 2AZ London UK
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1511885
Grant/Contract Number:  
DE‐SC0012704
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Paterson, Alexandra F., Tsetseris, Leonidas, Li, Ruipeng, Basu, Aniruddha, Faber, Hendrik, Emwas, Abdul‐Hamid, Panidi, Julianna, Fei, Zhuping, Niazi, Muhammad R., Anjum, Dalaver H., Heeney, Martin, and Anthopoulos, Thomas D. Addition of the Lewis Acid Zn(C 6 F 5 ) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm 2 V −1 s −1. Germany: N. p., 2019. Web. doi:10.1002/adma.201900871.
Paterson, Alexandra F., Tsetseris, Leonidas, Li, Ruipeng, Basu, Aniruddha, Faber, Hendrik, Emwas, Abdul‐Hamid, Panidi, Julianna, Fei, Zhuping, Niazi, Muhammad R., Anjum, Dalaver H., Heeney, Martin, & Anthopoulos, Thomas D. Addition of the Lewis Acid Zn(C 6 F 5 ) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm 2 V −1 s −1. Germany. doi:10.1002/adma.201900871.
Paterson, Alexandra F., Tsetseris, Leonidas, Li, Ruipeng, Basu, Aniruddha, Faber, Hendrik, Emwas, Abdul‐Hamid, Panidi, Julianna, Fei, Zhuping, Niazi, Muhammad R., Anjum, Dalaver H., Heeney, Martin, and Anthopoulos, Thomas D. Fri . "Addition of the Lewis Acid Zn(C 6 F 5 ) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm 2 V −1 s −1". Germany. doi:10.1002/adma.201900871.
@article{osti_1511885,
title = {Addition of the Lewis Acid Zn(C 6 F 5 ) 2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm 2 V −1 s −1},
author = {Paterson, Alexandra F. and Tsetseris, Leonidas and Li, Ruipeng and Basu, Aniruddha and Faber, Hendrik and Emwas, Abdul‐Hamid and Panidi, Julianna and Fei, Zhuping and Niazi, Muhammad R. and Anjum, Dalaver H. and Heeney, Martin and Anthopoulos, Thomas D.},
abstractNote = {},
doi = {10.1002/adma.201900871},
journal = {Advanced Materials},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {5}
}

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