Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V–1 s–1
Abstract
Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6F5)3] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6F5)3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6F5)2] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene–benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6F5)2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V–1 s–1. In conclusion, the work not only highlights Zn(C6F5)2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.
- Authors:
-
[2];
[1];
[4];
[4];
[4];
[1]
- King Abdullah Univ. of Science and Technology, Thuwal (Saudi Arabia)
- National Technical Univ. of Athens, Athens (Greece)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Imperial College London, London (United Kingdom)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1542777
- Alternate Identifier(s):
- OSTI ID: 1511885
- Report Number(s):
- BNL-211853-2019-JAAM
Journal ID: ISSN 0935-9648
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 31; Journal Issue: 27; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; carrier mobility; Lewis acid; molecular doping; organic semiconductors; organic thin‐film transistors
Citation Formats
Paterson, Alexandra F., Tsetseris, Leonidas, Li, Ruipeng, Basu, Aniruddha, Faber, Hendrik, Emwas, Abdul ‐Hamid, Panidi, Julianna, Fei, Zhuping, Niazi, Muhammad R., Anjum, Dalaver H., Heeney, Martin, and Anthopoulos, Thomas D. Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V–1 s–1. United States: N. p., 2019.
Web. doi:10.1002/adma.201900871.
Paterson, Alexandra F., Tsetseris, Leonidas, Li, Ruipeng, Basu, Aniruddha, Faber, Hendrik, Emwas, Abdul ‐Hamid, Panidi, Julianna, Fei, Zhuping, Niazi, Muhammad R., Anjum, Dalaver H., Heeney, Martin, & Anthopoulos, Thomas D. Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V–1 s–1. United States. https://doi.org/10.1002/adma.201900871
Paterson, Alexandra F., Tsetseris, Leonidas, Li, Ruipeng, Basu, Aniruddha, Faber, Hendrik, Emwas, Abdul ‐Hamid, Panidi, Julianna, Fei, Zhuping, Niazi, Muhammad R., Anjum, Dalaver H., Heeney, Martin, and Anthopoulos, Thomas D. Fri .
"Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V–1 s–1". United States. https://doi.org/10.1002/adma.201900871. https://www.osti.gov/servlets/purl/1542777.
@article{osti_1542777,
title = {Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V–1 s–1},
author = {Paterson, Alexandra F. and Tsetseris, Leonidas and Li, Ruipeng and Basu, Aniruddha and Faber, Hendrik and Emwas, Abdul ‐Hamid and Panidi, Julianna and Fei, Zhuping and Niazi, Muhammad R. and Anjum, Dalaver H. and Heeney, Martin and Anthopoulos, Thomas D.},
abstractNote = {Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6F5)3] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6F5)3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6F5)2] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene–benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6F5)2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V–1 s–1. In conclusion, the work not only highlights Zn(C6F5)2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.},
doi = {10.1002/adma.201900871},
journal = {Advanced Materials},
number = 27,
volume = 31,
place = {United States},
year = {Fri May 10 00:00:00 EDT 2019},
month = {Fri May 10 00:00:00 EDT 2019}
}
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