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Title: Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1511763
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 3 Journal Issue: 5; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Pandey, A., Liu, X., Deng, Z., Shin, W. J., Laleyan, D. A., Mashooq, K., Reid, E. T., Kioupakis, E., Bhattacharya, P., and Mi, Z. Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.053401.
Pandey, A., Liu, X., Deng, Z., Shin, W. J., Laleyan, D. A., Mashooq, K., Reid, E. T., Kioupakis, E., Bhattacharya, P., & Mi, Z. Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy. United States. doi:10.1103/PhysRevMaterials.3.053401.
Pandey, A., Liu, X., Deng, Z., Shin, W. J., Laleyan, D. A., Mashooq, K., Reid, E. T., Kioupakis, E., Bhattacharya, P., and Mi, Z. Thu . "Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy". United States. doi:10.1103/PhysRevMaterials.3.053401.
@article{osti_1511763,
title = {Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy},
author = {Pandey, A. and Liu, X. and Deng, Z. and Shin, W. J. and Laleyan, D. A. and Mashooq, K. and Reid, E. T. and Kioupakis, E. and Bhattacharya, P. and Mi, Z.},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.3.053401},
journal = {Physical Review Materials},
number = 5,
volume = 3,
place = {United States},
year = {2019},
month = {5}
}

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