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Title: Optical control of polarization in ferroelectric heterostructures

Abstract

In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO 3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS 2 as a top electrode. This effect is attributed to the redistribution of the photo-generated carriers and screening charges at the MoS 2/BaTiO 3 interface. Specifically, a two-step process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS 2 optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.

Authors:
 [1]; ORCiD logo [1];  [1];  [2];  [2];  [3];  [3];  [2];  [4]; ORCiD logo [1]; ORCiD logo [1]
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Univ. of Wisconsin, Madison, WI (United States)
  3. Univ. of Luxembourg (Luxembourg)
  4. Luxembourg Inst. of Science and Tech., Esch/Alzette (Luxembourg)
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1511703
Grant/Contract Number:  
FG02-06ER46327
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Tao, Lipatov, Alexey, Lu, Haidong, Lee, Hyungwoo, Lee, Jung-Woo, Torun, Engin, Wirtz, Ludger, Eom, Chang-Beom, Íñiguez, Jorge, Sinitskii, Alexander, and Gruverman, Alexei. Optical control of polarization in ferroelectric heterostructures. United States: N. p., 2018. Web. doi:10.1038/s41467-018-05640-4.
Li, Tao, Lipatov, Alexey, Lu, Haidong, Lee, Hyungwoo, Lee, Jung-Woo, Torun, Engin, Wirtz, Ludger, Eom, Chang-Beom, Íñiguez, Jorge, Sinitskii, Alexander, & Gruverman, Alexei. Optical control of polarization in ferroelectric heterostructures. United States. doi:10.1038/s41467-018-05640-4.
Li, Tao, Lipatov, Alexey, Lu, Haidong, Lee, Hyungwoo, Lee, Jung-Woo, Torun, Engin, Wirtz, Ludger, Eom, Chang-Beom, Íñiguez, Jorge, Sinitskii, Alexander, and Gruverman, Alexei. Tue . "Optical control of polarization in ferroelectric heterostructures". United States. doi:10.1038/s41467-018-05640-4. https://www.osti.gov/servlets/purl/1511703.
@article{osti_1511703,
title = {Optical control of polarization in ferroelectric heterostructures},
author = {Li, Tao and Lipatov, Alexey and Lu, Haidong and Lee, Hyungwoo and Lee, Jung-Woo and Torun, Engin and Wirtz, Ludger and Eom, Chang-Beom and Íñiguez, Jorge and Sinitskii, Alexander and Gruverman, Alexei},
abstractNote = {In the ferroelectric devices, polarization control is usually accomplished by application of an electric field. In this paper, we demonstrate optically induced polarization switching in BaTiO3-based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS2 as a top electrode. This effect is attributed to the redistribution of the photo-generated carriers and screening charges at the MoS2/BaTiO3 interface. Specifically, a two-step process, which involves formation of intra-layer excitons during light absorption followed by their decay into inter-layer excitons, results in the positive charge accumulation at the interface forcing the polarization reversal from the upward to the downward direction. Theoretical modeling of the MoS2 optical absorption spectra with and without the applied electric field provides quantitative support for the proposed mechanism. It is suggested that the discovered effect is of general nature and should be observable in any heterostructure comprising a ferroelectric and a narrow gap semiconductor.},
doi = {10.1038/s41467-018-05640-4},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {8}
}

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Works referenced in this record:

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