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Title: Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors

Abstract

Nanowire transistors are typically undoped devices whose characteristics depend strongly on the injection of carriers from the electrical contacts. Here in this letter, we fabricate and characterize SiGe nanowire transistors with an n-p-n doping profile and with a top gate covering only the p-doped section of the nanowire. For each device, we locate the p-segment with scanning capacitance microscopy, where the p-segment position varies along the channel due to the stochastic nature of our dropcast fabrication technique. The current–voltage characteristics for a series of transistors with different gate positions reveal that the on/off ratios for electrons is the highest when the gated p-type section is closest to the source contact, whereas the on/off ratios for holes is the highest when the gated p-type section is closest to the drain contact.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1511610
Report Number(s):
LA-UR-18-28409
Journal ID: ISSN 0741-3106
Grant/Contract Number:  
89233218CNA000001
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Electron Device Letters
Additional Journal Information:
Journal Volume: 40; Journal Issue: 5; Journal ID: ISSN 0741-3106
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Delker, Collin J., Yoo, Jinkyoung, Swartzentruber, Brian S., and Harris, C. Thomas. Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors. United States: N. p., 2019. Web. doi:10.1109/LED.2019.2905527.
Delker, Collin J., Yoo, Jinkyoung, Swartzentruber, Brian S., & Harris, C. Thomas. Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors. United States. doi:10.1109/LED.2019.2905527.
Delker, Collin J., Yoo, Jinkyoung, Swartzentruber, Brian S., and Harris, C. Thomas. Mon . "Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors". United States. doi:10.1109/LED.2019.2905527.
@article{osti_1511610,
title = {Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors},
author = {Delker, Collin J. and Yoo, Jinkyoung and Swartzentruber, Brian S. and Harris, C. Thomas},
abstractNote = {Nanowire transistors are typically undoped devices whose characteristics depend strongly on the injection of carriers from the electrical contacts. Here in this letter, we fabricate and characterize SiGe nanowire transistors with an n-p-n doping profile and with a top gate covering only the p-doped section of the nanowire. For each device, we locate the p-segment with scanning capacitance microscopy, where the p-segment position varies along the channel due to the stochastic nature of our dropcast fabrication technique. The current–voltage characteristics for a series of transistors with different gate positions reveal that the on/off ratios for electrons is the highest when the gated p-type section is closest to the source contact, whereas the on/off ratios for holes is the highest when the gated p-type section is closest to the drain contact.},
doi = {10.1109/LED.2019.2905527},
journal = {IEEE Electron Device Letters},
number = 5,
volume = 40,
place = {United States},
year = {2019},
month = {3}
}

Journal Article:
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This content will become publicly available on March 18, 2020
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