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Title: Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

Abstract

Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 10 20 cm -3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.

Authors:
 [1];  [1];  [1]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Physics
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1511312
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 94; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lee, H. -J., Helgren, E., and Hellman, F. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O. United States: N. p., 2009. Web. doi:10.1063/1.3147856.
Lee, H. -J., Helgren, E., & Hellman, F. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O. United States. doi:10.1063/1.3147856.
Lee, H. -J., Helgren, E., and Hellman, F. Mon . "Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O". United States. doi:10.1063/1.3147856. https://www.osti.gov/servlets/purl/1511312.
@article{osti_1511312,
title = {Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O},
author = {Lee, H. -J. and Helgren, E. and Hellman, F.},
abstractNote = {Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.},
doi = {10.1063/1.3147856},
journal = {Applied Physics Letters},
number = 21,
volume = 94,
place = {United States},
year = {2009},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 19 works
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