Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O
Abstract
Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.
- Authors:
-
- Univ. of California, Berkeley, CA (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1511312
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 94; Journal Issue: 21; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lee, H. -J., Helgren, E., and Hellman, F. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O. United States: N. p., 2009.
Web. doi:10.1063/1.3147856.
Lee, H. -J., Helgren, E., & Hellman, F. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O. United States. https://doi.org/10.1063/1.3147856
Lee, H. -J., Helgren, E., and Hellman, F. Mon .
"Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O". United States. https://doi.org/10.1063/1.3147856. https://www.osti.gov/servlets/purl/1511312.
@article{osti_1511312,
title = {Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O},
author = {Lee, H. -J. and Helgren, E. and Hellman, F.},
abstractNote = {Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.},
doi = {10.1063/1.3147856},
journal = {Applied Physics Letters},
number = 21,
volume = 94,
place = {United States},
year = {Mon May 25 00:00:00 EDT 2009},
month = {Mon May 25 00:00:00 EDT 2009}
}
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Cited by: 22 works
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Figures / Tables:
FIG. 1: Schematic energy band diagram for reverse (EG<0) , neutral (EG=0) , and forward (EG>0) biased (Zn,Al,Co)O-based FET device. Positive gate electric field increases electron concentration in the depletion layer (Zn,Co)O resulting in enhancement of the ferromagnetic interaction between Co ions, whereas negative gate voltage decreases the concentration andmore »
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- Matsukura, Fumihiro; Tokura, Yoshinori; Ohno, Hideo
- Nature Nanotechnology, Vol. 10, Issue 3
Influence of free charge carrier density on the magnetic behavior of (Zn,Co)O thin film studied by Field Effect modulation of magnetotransport
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Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
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Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass
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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.