skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

Abstract

Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.

Authors:
 [1];  [1];  [1]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Physics
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1511312
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 94; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lee, H. -J., Helgren, E., and Hellman, F. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O. United States: N. p., 2009. Web. doi:10.1063/1.3147856.
Lee, H. -J., Helgren, E., & Hellman, F. Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O. United States. doi:10.1063/1.3147856.
Lee, H. -J., Helgren, E., and Hellman, F. Mon . "Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O". United States. doi:10.1063/1.3147856. https://www.osti.gov/servlets/purl/1511312.
@article{osti_1511312,
title = {Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O},
author = {Lee, H. -J. and Helgren, E. and Hellman, F.},
abstractNote = {Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. In conclusion, the ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.},
doi = {10.1063/1.3147856},
journal = {Applied Physics Letters},
number = 21,
volume = 94,
place = {United States},
year = {2009},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 20 works
Citation information provided by
Web of Science

Figures / Tables:

FIG. 1 FIG. 1: Schematic energy band diagram for reverse (EG<0) , neutral (EG=0) , and forward (EG>0) biased (Zn,Al,Co)O-based FET device. Positive gate electric field increases electron concentration in the depletion layer (Zn,Co)O resulting in enhancement of the ferromagnetic interaction between Co ions, whereas negative gate voltage decreases the concentration andmore » reduces the interaction.« less

Save / Share:

Works referenced in this record:

Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO
journal, January 2001


Paramagnetism of the Co sublattice in ferromagnetic Zn 1 x Co x O films
journal, September 2007


Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor
journal, March 2004

  • Toyosaki, Hidemi; Fukumura, Tomoteru; Yamada, Yasuhiro
  • Nature Materials, Vol. 3, Issue 4
  • DOI: 10.1038/nmat1099

Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped ZnO
journal, January 2006


Microstructural and magnetic properties of ZnO:TM (TM=Co,Mn) diluted magnetic semiconducting nanoparticles
journal, November 2006

  • Mandal, S. K.; Das, A. K.; Nath, T. K.
  • Journal of Applied Physics, Vol. 100, Issue 10
  • DOI: 10.1063/1.2360387

Metal-insulator transition in Co-doped ZnO : Magnetotransport properties
journal, May 2006


Origin of ferromagnetism in ZnO codoped with Ga and Co: Experiment and theory
journal, October 2008


Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95Co0.05O1−δ
journal, January 2008

  • Liu, Q.; Gan, C. L.; Yuan, C. L.
  • Applied Physics Letters, Vol. 92, Issue 3
  • DOI: 10.1063/1.2835702

Making Nonmagnetic Semiconductors Ferromagnetic
journal, August 1998


Impurity control in Co-doped ZnO films through modifying cooling atmosphere
journal, January 2009

  • Liu, Yinglin; MacManus-Driscoll, Judith L.
  • Applied Physics Letters, Vol. 94, Issue 2
  • DOI: 10.1063/1.3068753

Ferromagnetism in Ni-doped ZnO films: Extrinsic or intrinsic?
journal, January 2009

  • Snure, Michael; Kumar, Dhananjay; Tiwari, Ashutosh
  • Applied Physics Letters, Vol. 94, Issue 1
  • DOI: 10.1063/1.3067998

First principles materials design for semiconductor spintronics
journal, March 2002


MATERIALS SCIENCE: Seeking Room-Temperature Ferromagnetic Semiconductors
journal, June 2006


Magnetism of (Zn,Co)O thin films probed by x-ray absorption spectroscopies
journal, January 2008

  • Rode, K.; Mattana, R.; Anane, A.
  • Applied Physics Letters, Vol. 92, Issue 1
  • DOI: 10.1063/1.2829610

Direct Kinetic Correlation of Carriers and Ferromagnetism in Co 2 + : ZnO
journal, July 2006


Electric-field control of ferromagnetism
journal, December 2000

  • Ohno, H.; Chiba, D.; Matsukura, F.
  • Nature, Vol. 408, Issue 6815
  • DOI: 10.1038/35050040

    Works referencing / citing this record:

    Control of magnetism by electric fields
    journal, March 2015

    • Matsukura, Fumihiro; Tokura, Yoshinori; Ohno, Hideo
    • Nature Nanotechnology, Vol. 10, Issue 3
    • DOI: 10.1038/nnano.2015.22

    Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate
    journal, May 2012


    Interface-induced phenomena in magnetism
    journal, June 2017


      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.