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Title: Hysteresis in the spontaneous emission induced by VO2 phase change

Abstract

We investigate the spontaneous emission of a two-level quantum emitter in the vicinity of a vanadium dioxide (VO2) thin film. By taking advantage of effective medium techniques to describe the dielectric constant of the VO2, we demonstrate that, in the near-field regime, the spontaneous emission rate of both electric and magnetic dipole emitters can be maximized at the insulator-to-metal phase transition temperature of the film. We find that VO2’s thermal hysteresis curve produces clear fingerprints in the emitter’s decay process, offering a new degree of freedom to dynamically control light emission at the nanoscale. We also find that the spontaneous emission rate is a non-monotonic function of the emitter transition wavelength, presenting a pronounced peak at infrared frequencies. Altogether, our results reveal that VO2 phase transition is a promising mechanism to achieve on-demand tuning of an emitter’s lifetime.

Authors:
 [1]; ORCiD logo [2];  [3];  [3];  [3]
  1. Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro (Brazil)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Federal Univ. of Rio de Janeiro, Rio de Janeiro (Brazil). Inst. de Física
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1511246
Alternate Identifier(s):
OSTI ID: 1497936
Report Number(s):
LA-UR-18-30372
Journal ID: ISSN 0740-3224; JOBPDE
Grant/Contract Number:  
89233218CNA000001; NA150208
Resource Type:
Accepted Manuscript
Journal Name:
Journal of the Optical Society of America. Part B, Optical Physics
Additional Journal Information:
Journal Volume: 36; Journal Issue: 4; Journal ID: ISSN 0740-3224
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Energy Sciences; Material Science

Citation Formats

Szilard, Daniela, de Melo Kort-Kamp, Wilton Junior, Rosa, F. S S, Pinheiro, F. A., and Farina, C. Hysteresis in the spontaneous emission induced by VO2 phase change. United States: N. p., 2019. Web. doi:10.1364/JOSAB.36.000C46.
Szilard, Daniela, de Melo Kort-Kamp, Wilton Junior, Rosa, F. S S, Pinheiro, F. A., & Farina, C. Hysteresis in the spontaneous emission induced by VO2 phase change. United States. doi:10.1364/JOSAB.36.000C46.
Szilard, Daniela, de Melo Kort-Kamp, Wilton Junior, Rosa, F. S S, Pinheiro, F. A., and Farina, C. Thu . "Hysteresis in the spontaneous emission induced by VO2 phase change". United States. doi:10.1364/JOSAB.36.000C46. https://www.osti.gov/servlets/purl/1511246.
@article{osti_1511246,
title = {Hysteresis in the spontaneous emission induced by VO2 phase change},
author = {Szilard, Daniela and de Melo Kort-Kamp, Wilton Junior and Rosa, F. S S and Pinheiro, F. A. and Farina, C.},
abstractNote = {We investigate the spontaneous emission of a two-level quantum emitter in the vicinity of a vanadium dioxide (VO2) thin film. By taking advantage of effective medium techniques to describe the dielectric constant of the VO2, we demonstrate that, in the near-field regime, the spontaneous emission rate of both electric and magnetic dipole emitters can be maximized at the insulator-to-metal phase transition temperature of the film. We find that VO2’s thermal hysteresis curve produces clear fingerprints in the emitter’s decay process, offering a new degree of freedom to dynamically control light emission at the nanoscale. We also find that the spontaneous emission rate is a non-monotonic function of the emitter transition wavelength, presenting a pronounced peak at infrared frequencies. Altogether, our results reveal that VO2 phase transition is a promising mechanism to achieve on-demand tuning of an emitter’s lifetime.},
doi = {10.1364/JOSAB.36.000C46},
journal = {Journal of the Optical Society of America. Part B, Optical Physics},
number = 4,
volume = 36,
place = {United States},
year = {2019},
month = {3}
}

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Cited by: 2 works
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Figures / Tables:

Fig. 1 Fig. 1: Schematic view of the system under investigation: a two-level emitter at a distance z of a VO2 thin film of width d = 200 nm, supported by a substrate of Sapphire.

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