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Title: Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

Abstract

The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN light-emitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of a new low-energy feature in addition to the previously measured three peaks present in the electron emission spectrum from a forward biased LED. Photoemission measurements show that the two low-energy peaks correspond to photoemitted electrons from each of the p-contact metals, palladium and gold. Here we confirm that the mid and high-energy peaks are due to electrons which have transited the p-type region of the device and have been emitted from the semiconductor surface from the bulk Γ-valley or a high-energy side valley.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1];  [1];  [3];  [3];  [4];  [1]
  1. Univ. of California, Santa Barbara, CA (United States)
  2. Vilnius Univ., Vilnius (Lithuania)
  3. Univ. Paris-Saclay, Palaiseau Cedex (France)
  4. Univ. of California, Santa Barbara, CA (United States); Univ. Paris-Saclay, Palaiseau Cedex (France)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1511166
Alternate Identifier(s):
OSTI ID: 1463053
Grant/Contract Number:  
EE0007096
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Myers, Daniel J., Gelžinytė, Kristina, Ho, Wan Ying, Iveland, Justin, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, and Speck, James S. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes. United States: N. p., 2018. Web. doi:10.1063/1.5030208.
Myers, Daniel J., Gelžinytė, Kristina, Ho, Wan Ying, Iveland, Justin, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, & Speck, James S. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes. United States. doi:10.1063/1.5030208.
Myers, Daniel J., Gelžinytė, Kristina, Ho, Wan Ying, Iveland, Justin, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, and Speck, James S. Mon . "Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes". United States. doi:10.1063/1.5030208. https://www.osti.gov/servlets/purl/1511166.
@article{osti_1511166,
title = {Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes},
author = {Myers, Daniel J. and Gelžinytė, Kristina and Ho, Wan Ying and Iveland, Justin and Martinelli, Lucio and Peretti, Jacques and Weisbuch, Claude and Speck, James S.},
abstractNote = {The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN light-emitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of a new low-energy feature in addition to the previously measured three peaks present in the electron emission spectrum from a forward biased LED. Photoemission measurements show that the two low-energy peaks correspond to photoemitted electrons from each of the p-contact metals, palladium and gold. Here we confirm that the mid and high-energy peaks are due to electrons which have transited the p-type region of the device and have been emitted from the semiconductor surface from the bulk Γ-valley or a high-energy side valley.},
doi = {10.1063/1.5030208},
journal = {Journal of Applied Physics},
number = 5,
volume = 124,
place = {United States},
year = {2018},
month = {8}
}

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