Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

Myers, Daniel J.; Gelžinytė, Kristina; Ho, Wan Ying; Iveland, Justin; Martinelli, Lucio; Peretti, Jacques; Weisbuch, Claude; Speck, James S.

doi:10.1063/1.5030208

Title: Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

Journal Article · 06 August 2018 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5030208 · OSTI ID:1511166

^[1]; Gelžinytė, Kristina ^[2];

^[3]; Iveland, Justin ^[3]; Martinelli, Lucio ^[4]; Peretti, Jacques ^[4]; Weisbuch, Claude ^[5]; Speck, James S. ^[3]

Univ. of California, Santa Barbara, CA (United States); none
Vilnius Univ., Vilnius (Lithuania)
Univ. of California, Santa Barbara, CA (United States)
Univ. Paris-Saclay, Palaiseau Cedex (France)
Univ. of California, Santa Barbara, CA (United States); Univ. Paris-Saclay, Palaiseau Cedex (France)

The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN light-emitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of a new low-energy feature in addition to the previously measured three peaks present in the electron emission spectrum from a forward biased LED. Photoemission measurements show that the two low-energy peaks correspond to photoemitted electrons from each of the p-contact metals, palladium and gold. Here we confirm that the mid and high-energy peaks are due to electrons which have transited the p-type region of the device and have been emitted from the semiconductor surface from the bulk Γ-valley or a high-energy side valley.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Grant/Contract Number:: EE0007096

OSTI ID:: 1511166

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 124; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (3)

Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs Espenlaub, Andrew C.; Myers, Daniel J.; Young, Erin C. Journal of Applied Physics, Vol. 126, Issue 18 https://doi.org/10.1063/1.5096773	journal	November 2019
Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop Myers, Daniel J.; Gelžinytė, Kristina; Alhassan, Abdullah I. Physical Review B, Vol. 100, Issue 12 https://doi.org/10.1103/physrevb.100.125303	journal	September 2019
Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future Weisbuch, Claude ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1 https://doi.org/10.1149/2.0392001jss	journal	January 2020

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Title: Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

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