Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition

Abstract

III-IV-V heterovalent alloys have the potential to satisfy the need for infrared bandgap materials that also have lattice constants near GaAs. In this work, significant room temperature photoluminescence is reported for the first time in high quality III-IV-V alloys grown by metalorganic chemical vapor deposition. Pronounced phase separation, a characteristic suspected to quench luminescence in the alloys in the past, was successfully inhibited by a modified growth process. Small scale composition fluctuations were observed in the alloys; higher growth temperatures resulted in fluctuations with a striated morphology, while lower growth temperatures resulted in fluctuations with a speckled morphology. The composition fluctuations cause bandgap narrowing in the alloys—measurements of various compositions of (GaAs)1-x(Ge2)x alloys reveal a maximum energy transition of 0.8 eV under 20% Ge composition rather than a continuously increasing transition with the decreasing Ge composition. Additionally, luminescence intensity decreased with the decreasing Ge composition. The alloys appear to act as a Ge-like solid penetrating a GaAs lattice, resulting in optical properties similar to those of Ge but with a direct-bandgap nature; a decrease in the Ge composition corresponds to a reduction in the light-emitting Ge-like material within the lattice. An energy transition larger than 0.8 eV was obtained throughmore » the addition of silicon to the (GaAs)1-x(Ge2)x alloy. The results indicate significant promise for III-IV-V alloys as potential materials for small bandgap optical devices with previously unachievable lattice constants.« less

Authors:
 [1];  [1];  [1]; ORCiD logo [1]
+ Show Author Affiliations
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1511156
Alternate Identifier(s):
OSTI ID: 1435876
Grant/Contract Number:  
SC0001088
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 17; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jia, Roger, Zhu, Tony, Bulović, Vladimir, and Fitzgerald, Eugene A. Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition. United States: N. p., 2018. Web. doi:10.1063/1.5016443.
Copy to clipboard
Jia, Roger, Zhu, Tony, Bulović, Vladimir, & Fitzgerald, Eugene A. Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition. United States. https://doi.org/10.1063/1.5016443
Copy to clipboard
Jia, Roger, Zhu, Tony, Bulović, Vladimir, and Fitzgerald, Eugene A. Thu . "Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition". United States. https://doi.org/10.1063/1.5016443. https://www.osti.gov/servlets/purl/1511156.
Copy to clipboard
@article{osti_1511156,
title = {Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition},
author = {Jia, Roger and Zhu, Tony and Bulović, Vladimir and Fitzgerald, Eugene A.},
abstractNote = {III-IV-V heterovalent alloys have the potential to satisfy the need for infrared bandgap materials that also have lattice constants near GaAs. In this work, significant room temperature photoluminescence is reported for the first time in high quality III-IV-V alloys grown by metalorganic chemical vapor deposition. Pronounced phase separation, a characteristic suspected to quench luminescence in the alloys in the past, was successfully inhibited by a modified growth process. Small scale composition fluctuations were observed in the alloys; higher growth temperatures resulted in fluctuations with a striated morphology, while lower growth temperatures resulted in fluctuations with a speckled morphology. The composition fluctuations cause bandgap narrowing in the alloys—measurements of various compositions of (GaAs)1-x(Ge2)x alloys reveal a maximum energy transition of 0.8 eV under 20% Ge composition rather than a continuously increasing transition with the decreasing Ge composition. Additionally, luminescence intensity decreased with the decreasing Ge composition. The alloys appear to act as a Ge-like solid penetrating a GaAs lattice, resulting in optical properties similar to those of Ge but with a direct-bandgap nature; a decrease in the Ge composition corresponds to a reduction in the light-emitting Ge-like material within the lattice. An energy transition larger than 0.8 eV was obtained through the addition of silicon to the (GaAs)1-x(Ge2)x alloy. The results indicate significant promise for III-IV-V alloys as potential materials for small bandgap optical devices with previously unachievable lattice constants.},
doi = {10.1063/1.5016443},
journal = {Journal of Applied Physics},
number = 17,
volume = 123,
place = {United States},
year = {Thu May 03 00:00:00 EDT 2018},
month = {Thu May 03 00:00:00 EDT 2018}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5016443
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Structural studies of natural superlattices in group III-V alloy epitaxial layers
journal, January 1993

  • Norman, A. G.; Seong, T. -Y; Ferguson, I. T.
  • Semiconductor Science and Technology, Vol. 8, Issue 1S
  • DOI: 10.1088/0268-1242/8/1S/003

Growth of (GaAs)1_x(Ge2)x by metalorganic chemical vapor deposition
journal, February 1994

  • Vernon, S. M.; Sanfacon, M. M.; Ahrenkiel, R. K.
  • Journal of Electronic Materials, Vol. 23, Issue 2
  • DOI: 10.1007/BF02655261

Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys
journal, January 1982

  • Barnett, S. A.; Ray, M. A.; Lastras, A.
  • Electronics Letters, Vol. 18, Issue 20
  • DOI: 10.1049/el:19820604

Naturally formed In x Al 1− x As/In y Al 1− y As vertical superlattices
journal, June 1996

  • Jun, Sung Won; Seong, Tae‐Yeon; Lee, J. H.
  • Applied Physics Letters, Vol. 68, Issue 24
  • DOI: 10.1063/1.115787

Ge-related faceting and segregation during the growth of metastable (GaAs)1−x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy
journal, March 1999

  • Norman, A. G.; Olson, J. M.; Geisz, J. F.
  • Applied Physics Letters, Vol. 74, Issue 10
  • DOI: 10.1063/1.123557

Polar-on-nonpolar epitaxy
journal, February 1987

High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007

  • Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W.
  • Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502
  • DOI: 10.1063/1.2753729

Two-dimensional phase separation and surface-reconstruction driven atomic ordering in mixed III–V layers
journal, March 1995

Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
journal, March 2012

  • Kim, T. W.; Garrod, T. J.; Kim, K.
  • Applied Physics Letters, Vol. 100, Issue 12
  • DOI: 10.1063/1.3693160

Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition
journal, October 2008

  • Bai, Yu; Lee, Kenneth E.; Cheng, Chengwei
  • Journal of Applied Physics, Vol. 104, Issue 8
  • DOI: 10.1063/1.3005886

Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates
journal, March 2000

  • Ting, S. M.; Fitzgerald, E. A.
  • Journal of Applied Physics, Vol. 87, Issue 5
  • DOI: 10.1063/1.372227

Correlation effects in metastable (Ga As)1−x Ge2x alloys
journal, September 1985

On the Chemical Origin of the Gap Bowing in (GaAs)1−x Ge2x Alloys: A Combined DFT–QSGW Study
journal, January 2010

  • Giorgi, Giacomo; Schilfgaarde, Mark; Korkin, Anatoli
  • Nanoscale Research Letters, Vol. 5, Issue 3
  • DOI: 10.1007/s11671-009-9516-2

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates
journal, May 2013

  • Mukherjee, K.; Beaton, D. A.; Christian, T.
  • Journal of Applied Physics, Vol. 113, Issue 18
  • DOI: 10.1063/1.4804264

Optical Absorption in Single-Crystal Metastable ( GaAs ) 1 − x ( Ge 2 ) x Alloys: Evidence for a Zinc-Blende-Diamond Order-Disorder Transition
journal, May 1983

Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys
journal, April 1995

A review of recent research on the growth and physical properties of single crystal metastable elemental and alloy semiconductors
journal, January 1983

  • Greene, J. E.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 1, Issue 2
  • DOI: 10.1116/1.582492

Zinc-blende—diamond order-disorder transition in metastable crystalline ( GaAs ) 1 − x Ge 2 x alloys
journal, June 1983

Immiscibility and spinodal decomposition in III/V alloys
journal, December 1983

1-eV solar cells with GaInNAs active layer
journal, December 1998

Structure of the alloy (GaAs ) 1 − x Ge 2 x and its electronic properties
journal, February 1992

Surface layer spinodal decomposition in In 1− x Ga x As y P 1− y and In 1− x Ga x As grown by hydride transport vapor‐phase epitaxy
journal, May 1985

  • Chu, S. N. G.; Nakahara, S.; Strege, K. E.
  • Journal of Applied Physics, Vol. 57, Issue 10
  • DOI: 10.1063/1.335368

Thermal conductivity of GaAs/Ge nanostructures
journal, May 2017

  • Jia, Roger; Zeng, Lingping; Chen, Gang
  • Applied Physics Letters, Vol. 110, Issue 22
  • DOI: 10.1063/1.4984957

Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers
journal, October 1996

  • Diéguez, A.; Peiró, F.; Cornet, A.
  • Journal of Applied Physics, Vol. 80, Issue 7
  • DOI: 10.1063/1.363332
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures
    journal, January 2018

    • Liu, Hongfei; Jin, Yunjiang; Lin, Ming
    • Journal of Materials Chemistry C, Vol. 6, Issue 47
    • DOI: 10.1039/c8tc04799e
      Sort by:
      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: