The influence of point defects on the thermal conductivity of AlN crystals
Abstract
Here, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations is analyzed using the 3ω method in the temperature range of 30–325K. AlN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268W/m K and 339W/m K. AlN crystals grown by hydride vapor phase epitaxy yield values between 298W/m K and 341W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of AlN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100K. Lastly, phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AlN within the investigated temperature range.
- Authors:
-
[1];
[1];
[2];
[2];
- North Carolina State Univ., Raleigh, NC (United States)
- Leibniz Institute for Crystal Growth (IKZ), Berlin (Germany)
- Tokuyama Corporation, Tsukuba (Japan)
- North Carolina State Univ., Raleigh, NC (United States); Adroit Materials, Inc., Cary, NC (United States)
- Tokyo University of Agriculture and Technology, Koganei (Japan)
- Publication Date:
- Research Org.:
- Adroit Materials, Inc., Cary, NC (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1511154
- Alternate Identifier(s):
- OSTI ID: 1436905
- Grant/Contract Number:
- SC0011883
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 123; Journal Issue: 18; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Rounds, Robert, Sarkar, Biplab, Alden, Dorian, Guo, Qiang, Klump, Andrew, Hartmann, Carsten, Nagashima, Toru, Kirste, Ronny, Franke, Alexander, Bickermann, Matthias, Kumagai, Yoshinao, Sitar, Zlatko, and Collazo, Ramón. The influence of point defects on the thermal conductivity of AlN crystals. United States: N. p., 2018.
Web. doi:10.1063/1.5028141.
Rounds, Robert, Sarkar, Biplab, Alden, Dorian, Guo, Qiang, Klump, Andrew, Hartmann, Carsten, Nagashima, Toru, Kirste, Ronny, Franke, Alexander, Bickermann, Matthias, Kumagai, Yoshinao, Sitar, Zlatko, & Collazo, Ramón. The influence of point defects on the thermal conductivity of AlN crystals. United States. https://doi.org/10.1063/1.5028141
Rounds, Robert, Sarkar, Biplab, Alden, Dorian, Guo, Qiang, Klump, Andrew, Hartmann, Carsten, Nagashima, Toru, Kirste, Ronny, Franke, Alexander, Bickermann, Matthias, Kumagai, Yoshinao, Sitar, Zlatko, and Collazo, Ramón. Mon .
"The influence of point defects on the thermal conductivity of AlN crystals". United States. https://doi.org/10.1063/1.5028141. https://www.osti.gov/servlets/purl/1511154.
@article{osti_1511154,
title = {The influence of point defects on the thermal conductivity of AlN crystals},
author = {Rounds, Robert and Sarkar, Biplab and Alden, Dorian and Guo, Qiang and Klump, Andrew and Hartmann, Carsten and Nagashima, Toru and Kirste, Ronny and Franke, Alexander and Bickermann, Matthias and Kumagai, Yoshinao and Sitar, Zlatko and Collazo, Ramón},
abstractNote = {Here, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations is analyzed using the 3ω method in the temperature range of 30–325K. AlN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268W/m K and 339W/m K. AlN crystals grown by hydride vapor phase epitaxy yield values between 298W/m K and 341W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of AlN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100K. Lastly, phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AlN within the investigated temperature range.},
doi = {10.1063/1.5028141},
journal = {Journal of Applied Physics},
number = 18,
volume = 123,
place = {United States},
year = {Mon May 14 00:00:00 EDT 2018},
month = {Mon May 14 00:00:00 EDT 2018}
}
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Cited by: 15 works
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Figures / Tables:
FIG. 1: Thermal conductivity as a function of temperature for InAs, Si, and diamond with an θD of 280, 643, and 1870 K, respectively.
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Works referencing / citing this record:
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
journal, September 2018
- Rounds, Robert; Sarkar, Biplab; Sochacki, Tomasz
- Journal of Applied Physics, Vol. 124, Issue 10
Thermal conductivity of crystalline AlN and the influence of atomic-scale defects
journal, November 2019
- Xu, Runjie Lily; Muñoz Rojo, Miguel; Islam, S. M.
- Journal of Applied Physics, Vol. 126, Issue 18
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