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Title: Enhancement of the open circuit voltage of Cu 2 O/Ga 2 O 3 heterojunction solar cells through the mitigation of interfacial recombination

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Harvard University, Cambridge, Massachusetts 02138, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1510373
Grant/Contract Number:  
EE0005329
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 9 Journal Issue: 5; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Chua, Danny, Kim, Sang Bok, and Gordon, Roy. Enhancement of the open circuit voltage of Cu 2 O/Ga 2 O 3 heterojunction solar cells through the mitigation of interfacial recombination. United States: N. p., 2019. Web. doi:10.1063/1.5096283.
Chua, Danny, Kim, Sang Bok, & Gordon, Roy. Enhancement of the open circuit voltage of Cu 2 O/Ga 2 O 3 heterojunction solar cells through the mitigation of interfacial recombination. United States. doi:10.1063/1.5096283.
Chua, Danny, Kim, Sang Bok, and Gordon, Roy. Wed . "Enhancement of the open circuit voltage of Cu 2 O/Ga 2 O 3 heterojunction solar cells through the mitigation of interfacial recombination". United States. doi:10.1063/1.5096283.
@article{osti_1510373,
title = {Enhancement of the open circuit voltage of Cu 2 O/Ga 2 O 3 heterojunction solar cells through the mitigation of interfacial recombination},
author = {Chua, Danny and Kim, Sang Bok and Gordon, Roy},
abstractNote = {},
doi = {10.1063/1.5096283},
journal = {AIP Advances},
number = 5,
volume = 9,
place = {United States},
year = {2019},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5096283

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