Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid

Wang, Laidong; Huang, Wen-Hsi; Shin, Woo Jung; Tao, Meng; Deng, Bowen; Wang, Dihua

doi:10.1149/2.0731809jes

Title: Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid

Abstract

Conventional electroplating of aluminum on silicon often requires a seed layer to overcome the high resistivity of the substrate. In this paper, light-induced plating of aluminum directly on a silicon substrate in an ionic liquid is reported. Without any seed layer, the deposited aluminum has good adhesion to the silicon surface. The resistivity of the aluminum deposits is as low as 4 × 10^-6 Ω-cm, which is only about 1.5 times that of bulk aluminum. The suitable wavelength for the light source is 600 nm to 1,000 nm. The effect of plating temperature on morphology of the aluminum deposits is analyzed.

Authors:

Wang, Laidong ^[1]; Huang, Wen-Hsi ^[1]; Shin, Woo Jung ^[1]; Tao, Meng ^[1]; Deng, Bowen ^[2];

^[2]

Arizona State Univ., Tempe, AZ (United States)
Wuhan Univ. (China)

Publication Date:: Fri Jun 08 00:00:00 EDT 2018

Research Org.:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1509874

Grant/Contract Number:: EE0008150

Resource Type:: Accepted Manuscript

Journal Name:: Journal of the Electrochemical Society

Additional Journal Information:: Journal Volume: 165; Journal Issue: 9; Journal ID: ISSN 0013-4651

Publisher:: The Electrochemical Society

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Aluminum; Ionic liquid; Light-induced plating

Citation Formats


                    Wang, Laidong, Huang, Wen-Hsi, Shin, Woo Jung, Tao, Meng, Deng, Bowen, and Wang, Dihua. Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid.  United States: N. p., 2018. 
Web.  doi:10.1149/2.0731809jes.

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                    Wang, Laidong, Huang, Wen-Hsi, Shin, Woo Jung, Tao, Meng, Deng, Bowen, & Wang, Dihua. Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid.  United States.  https://doi.org/10.1149/2.0731809jes

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                    Wang, Laidong, Huang, Wen-Hsi, Shin, Woo Jung, Tao, Meng, Deng, Bowen, and Wang, Dihua. Fri .  
"Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid".  United States.  https://doi.org/10.1149/2.0731809jes.  https://www.osti.gov/servlets/purl/1509874.

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@article{osti_1509874,

  title        = {Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid},

  author       = {Wang, Laidong and Huang, Wen-Hsi and Shin, Woo Jung and Tao, Meng and Deng, Bowen and Wang, Dihua},

  abstractNote = {Conventional electroplating of aluminum on silicon often requires a seed layer to overcome the high resistivity of the substrate. In this paper, light-induced plating of aluminum directly on a silicon substrate in an ionic liquid is reported. Without any seed layer, the deposited aluminum has good adhesion to the silicon surface. The resistivity of the aluminum deposits is as low as 4 × 10-6 Ω-cm, which is only about 1.5 times that of bulk aluminum. The suitable wavelength for the light source is 600 nm to 1,000 nm. The effect of plating temperature on morphology of the aluminum deposits is analyzed.},

  doi          = {10.1149/2.0731809jes},

  journal      = {Journal of the Electrochemical Society},

  number       = 9,

  volume       = 165,

  place        = {United States},

  year         = {Fri Jun 08 00:00:00 EDT 2018},

  month        = {Fri Jun 08 00:00:00 EDT 2018}

}

Copy to clipboard

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https://doi.org/10.1149/2.0731809jes

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Works referenced in this record:

Electrodeposition of aluminium in aluminium chloride/1-methyl-3-ethylimidazolium chloride
journal, July 1988

Lai, P. K.; Skyllas-Kazacos, M.
Journal of Electroanalytical Chemistry and Interfacial Electrochemistry, Vol. 248, Issue 2, p. 431-440
DOI: 10.1016/0022-0728(88)85103-9

Electrodeposition of Aluminum from the Aluminum Chloride-1-Methyl-3-ethylimidazolium Chloride Room Temperature Molten Salt + Benzene
journal, January 1997

Liao, Qing
Journal of The Electrochemical Society, Vol. 144, Issue 3
DOI: 10.1149/1.1837510

Nucleation and Morphology Studies of Aluminum Deposited from an Ambient‐Temperature Chloroaluminate Molten Salt
journal, January 1992

Carlin, Richard T.; Crawford, Wayne; Bersch, Michael
Journal of The Electrochemical Society, Vol. 139, Issue 10, p. 2720-2727
DOI: 10.1149/1.2068970

The Electrodeposition of Aluminum from Nonaqueous Solutions at Room Temperature
journal, January 1951

Hurley, Frank H.; WIer, Thomas P.
Journal of The Electrochemical Society, Vol. 98, Issue 5
DOI: 10.1149/1.2778133

Electrodeposition of aluminium from ionic liquids: Part I—electrodeposition and surface morphology of aluminium from aluminium chloride (AlCl₃)–1-ethyl-3-methylimidazolium chloride ([EMIm]Cl) ionic liquids
journal, September 2006

Jiang, T.; Chollier Brym, M. J.; Dubé, G.
Surface and Coatings Technology, Vol. 201, Issue 1-2, p. 1-9
DOI: 10.1016/j.surfcoat.2005.10.046

Electroplating of Aluminium on Silicon in an Ionic Liquid
journal, January 2015

Sun, W. -C.; Han, X.; Tao, M.
ECS Electrochemistry Letters, Vol. 4, Issue 4
DOI: 10.1149/2.0021504eel

Evolution of metal plating for silicon solar cell metallisation: Silicon solar cell metallisation
journal, May 2012

Lennon, Alison; Yao, Yu; Wenham, Stuart
Progress in Photovoltaics: Research and Applications, Vol. 21, Issue 7
DOI: 10.1002/pip.2221

Ni/Cu metallization for low-cost high-efficiency PERC cells
journal, October 2002

Lee, E. J.; Kim, D. S.; Lee, S. H.
Solar Energy Materials and Solar Cells, Vol. 74, Issue 1-4
DOI: 10.1016/S0927-0248(02)00049-1

Electrochemical methods to analyse the light-induced plating process
journal, December 2009

Bartsch, J.; Radtke, V.; Schetter, C.
Journal of Applied Electrochemistry, Vol. 40, Issue 4
DOI: 10.1007/s10800-009-0054-5

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Similar Records

Title: Communication—Light-Induced Plating of Aluminum on Silicon in a Lewis Acidic Chloroaluminate Ionic Liquid

Abstract

Citation Formats

Electrodeposition of aluminium in aluminium chloride/1-methyl-3-ethylimidazolium chloride journal, July 1988

Electrodeposition of Aluminum from the Aluminum Chloride-1-Methyl-3-ethylimidazolium Chloride Room Temperature Molten Salt + Benzene journal, January 1997

Nucleation and Morphology Studies of Aluminum Deposited from an Ambient‐Temperature Chloroaluminate Molten Salt journal, January 1992

The Electrodeposition of Aluminum from Nonaqueous Solutions at Room Temperature journal, January 1951

Electrodeposition of aluminium from ionic liquids: Part I—electrodeposition and surface morphology of aluminium from aluminium chloride (AlCl3)–1-ethyl-3-methylimidazolium chloride ([EMIm]Cl) ionic liquids journal, September 2006

Electroplating of Aluminium on Silicon in an Ionic Liquid journal, January 2015

Evolution of metal plating for silicon solar cell metallisation: Silicon solar cell metallisation journal, May 2012

Ni/Cu metallization for low-cost high-efficiency PERC cells journal, October 2002

Electrochemical methods to analyse the light-induced plating process journal, December 2009

Electrodeposition of aluminium in aluminium chloride/1-methyl-3-ethylimidazolium chloride
journal, July 1988

Electrodeposition of Aluminum from the Aluminum Chloride-1-Methyl-3-ethylimidazolium Chloride Room Temperature Molten Salt + Benzene
journal, January 1997

Nucleation and Morphology Studies of Aluminum Deposited from an Ambient‐Temperature Chloroaluminate Molten Salt
journal, January 1992

The Electrodeposition of Aluminum from Nonaqueous Solutions at Room Temperature
journal, January 1951

Electrodeposition of aluminium from ionic liquids: Part I—electrodeposition and surface morphology of aluminium from aluminium chloride (AlCl₃)–1-ethyl-3-methylimidazolium chloride ([EMIm]Cl) ionic liquids
journal, September 2006

Electroplating of Aluminium on Silicon in an Ionic Liquid
journal, January 2015

Evolution of metal plating for silicon solar cell metallisation: Silicon solar cell metallisation
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Ni/Cu metallization for low-cost high-efficiency PERC cells
journal, October 2002

Electrochemical methods to analyse the light-induced plating process
journal, December 2009