Controlling the Vapor Transport Crystal Growth of Hg3Se2I2 Hard Radiation Detector Using Organic Polymer

doi:10.1021/acs.cgd.8b01646

Title: Controlling the Vapor Transport Crystal Growth of Hg₃Se₂I₂ Hard Radiation Detector Using Organic Polymer

Abstract

The chalcohalide compound Hg₃Se₂I₂ with a defect anti-perovskite structure has been demonstrated to be a promising semiconductor for room temperature X- and gamma-ray detection. In this work, we use transport agents during the vapor growth of Hg₃Se₂I₂ crystals under gradient temperature profiles to dramatically improve the size and yield of Hg₃Se₂I₂ single crystals. Various growth conditions with combinations of organic polymer (polyethylene) with elemental Hg, Se, or 12 are compared. The largest single crystals (with size up to 7 x 5 x 3.5 mm³) were obtained using both polyethylene and excess I-2 as the transport agents. The as-prepared detector devices based on these crystals have excellent photo response to a series of radiation sources, including low flux X-ray source, alpha particles, and gamma-rays. The X-ray induced photocurrent of Hg₃Se₂I₂ detectors is 3 orders of magnitude higher than the dark current, indicating excellent X-ray photosensitivity. Under Am-241 alpha particle source (5.5 MeV), the best energy resolution obtained is similar to 8.1%. The Hg₃Se₂I₂ device also shows improved detector performance under Co-57 and Cs-137 gamma-ray sources. The improved crystal growth and detector performance using this polymer additive during the vapor transport process further confirms the great potential for the development of Hg₃Se₂I₂more » for radiation detection.« less

Authors:

^[1];

^[1]; Liu, Zhifu ^[1];

^[1];

^[2];

^[1]; Chung, Duck Young ^[2];

^[1];

^[2]

Northwestern Univ., Evanston, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)

Publication Date:: 2019-03-05

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: US Department of Homeland Security (DHS); USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1508977

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Crystal Growth and Design

Additional Journal Information:: Journal Volume: 19; Journal Issue: 4; Journal ID: ISSN 1528-7483

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    He, Yihui, Alexander, Grant C.  B., Das, Sanjib, Liu, Zhifu, Hadar, Ido, McCall, Kyle M., Lin, Wenwen, Xu, Yadong, Chung, Duck Young, Wessels, Bruce W., and Kanatzidis, Mercouri G. Controlling the Vapor Transport Crystal Growth of Hg3Se2I2 Hard Radiation Detector Using Organic Polymer.  United States: N. p., 2019. 
        Web.  doi:10.1021/acs.cgd.8b01646.

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                    He, Yihui, Alexander, Grant C.  B., Das, Sanjib, Liu, Zhifu, Hadar, Ido, McCall, Kyle M., Lin, Wenwen, Xu, Yadong, Chung, Duck Young, Wessels, Bruce W., & Kanatzidis, Mercouri G. Controlling the Vapor Transport Crystal Growth of Hg3Se2I2 Hard Radiation Detector Using Organic Polymer.  United States.  doi:10.1021/acs.cgd.8b01646.

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                    He, Yihui, Alexander, Grant C.  B., Das, Sanjib, Liu, Zhifu, Hadar, Ido, McCall, Kyle M., Lin, Wenwen, Xu, Yadong, Chung, Duck Young, Wessels, Bruce W., and Kanatzidis, Mercouri G. Tue .  
        "Controlling the Vapor Transport Crystal Growth of Hg3Se2I2 Hard Radiation Detector Using Organic Polymer".  United States.  doi:10.1021/acs.cgd.8b01646.  https://www.osti.gov/servlets/purl/1508977.

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@article{osti_1508977,

  title        = {Controlling the Vapor Transport Crystal Growth of Hg3Se2I2 Hard Radiation Detector Using Organic Polymer},

  author       = {He, Yihui and Alexander, Grant C.  B. and Das, Sanjib and Liu, Zhifu and Hadar, Ido and McCall, Kyle M. and Lin, Wenwen and Xu, Yadong and Chung, Duck Young and Wessels, Bruce W. and Kanatzidis, Mercouri G.},

  abstractNote = {The chalcohalide compound Hg3Se2I2 with a defect anti-perovskite structure has been demonstrated to be a promising semiconductor for room temperature X- and gamma-ray detection. In this work, we use transport agents during the vapor growth of Hg3Se2I2 crystals under gradient temperature profiles to dramatically improve the size and yield of Hg3Se2I2 single crystals. Various growth conditions with combinations of organic polymer (polyethylene) with elemental Hg, Se, or 12 are compared. The largest single crystals (with size up to 7 x 5 x 3.5 mm3) were obtained using both polyethylene and excess I-2 as the transport agents. The as-prepared detector devices based on these crystals have excellent photo response to a series of radiation sources, including low flux X-ray source, alpha particles, and gamma-rays. The X-ray induced photocurrent of Hg3Se2I2 detectors is 3 orders of magnitude higher than the dark current, indicating excellent X-ray photosensitivity. Under Am-241 alpha particle source (5.5 MeV), the best energy resolution obtained is similar to 8.1%. The Hg3Se2I2 device also shows improved detector performance under Co-57 and Cs-137 gamma-ray sources. The improved crystal growth and detector performance using this polymer additive during the vapor transport process further confirms the great potential for the development of Hg3Se2I2 for radiation detection.},

  doi          = {10.1021/acs.cgd.8b01646},

  journal      = {Crystal Growth and Design},

  number       = 4,

  volume       = 19,

  place        = {United States},

  year         = {2019},

  month        = {3}

}

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DOI: 10.1021/acs.cgd.8b01646

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Works referencing / citing this record:

CSD 1876748: Experimental Crystal Structure Determination
dataset, January 2019

He, Yihui; Alexander, Grant C. B.; Das, Sanjib
FIZ Karlsruhe – Leibniz Institute for Information Infrastructure
DOI: 10.25505/fiz.icsd.cc20zx86

Monte Carlo simulation of transport properties in wide gap Hg ₃ Se ₂ I ₂
journal, October 2019

Min, Lujin; Liu, Zhifu; Peters, J. A.
Semiconductor Science and Technology, Vol. 34, Issue 11
DOI: 10.1088/1361-6641/ab3fdd

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Title: Controlling the Vapor Transport Crystal Growth of Hg3Se2I2 Hard Radiation Detector Using Organic Polymer

Abstract

Citation Formats

CSD 1876748: Experimental Crystal Structure Determination dataset, January 2019

Monte Carlo simulation of transport properties in wide gap Hg 3 Se 2 I 2 journal, October 2019

Title: Controlling the Vapor Transport Crystal Growth of Hg₃Se₂I₂ Hard Radiation Detector Using Organic Polymer

CSD 1876748: Experimental Crystal Structure Determination
dataset, January 2019

Monte Carlo simulation of transport properties in wide gap Hg ₃ Se ₂ I ₂
journal, October 2019