Leakage and breakdown mechanisms of GaN vertical power FinFETs
- Authors:
-
- Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA
- IQE RF LLC, Somerset, New Jersey 08873, USA
- Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Publication Date:
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1508681
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 114 Journal Issue: 16; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Xiao, Ming, Gao, Xiang, Palacios, Tomás, and Zhang, Yuhao. Leakage and breakdown mechanisms of GaN vertical power FinFETs. United States: N. p., 2019.
Web. doi:10.1063/1.5092433.
Xiao, Ming, Gao, Xiang, Palacios, Tomás, & Zhang, Yuhao. Leakage and breakdown mechanisms of GaN vertical power FinFETs. United States. https://doi.org/10.1063/1.5092433
Xiao, Ming, Gao, Xiang, Palacios, Tomás, and Zhang, Yuhao. Mon .
"Leakage and breakdown mechanisms of GaN vertical power FinFETs". United States. https://doi.org/10.1063/1.5092433.
@article{osti_1508681,
title = {Leakage and breakdown mechanisms of GaN vertical power FinFETs},
author = {Xiao, Ming and Gao, Xiang and Palacios, Tomás and Zhang, Yuhao},
abstractNote = {},
doi = {10.1063/1.5092433},
journal = {Applied Physics Letters},
number = 16,
volume = 114,
place = {United States},
year = {Mon Apr 22 00:00:00 EDT 2019},
month = {Mon Apr 22 00:00:00 EDT 2019}
}
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https://doi.org/10.1063/1.5092433
https://doi.org/10.1063/1.5092433
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Cited by: 32 works
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