Leakage and breakdown mechanisms of GaN vertical power FinFETs

Xiao, Ming; Gao, Xiang; Palacios, Tomás; Zhang, Yuhao

doi:10.1063/1.5092433

Title: Leakage and breakdown mechanisms of GaN vertical power FinFETs

Authors:

Xiao, Ming ^[1]; Gao, Xiang ^[2]; Palacios, Tomás ^[3];

^[1]

Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA
IQE RF LLC, Somerset, New Jersey 08873, USA
Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

Publication Date:: Mon Apr 22 00:00:00 EDT 2019

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1508681

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 114 Journal Issue: 16; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Xiao, Ming, Gao, Xiang, Palacios, Tomás, and Zhang, Yuhao. Leakage and breakdown mechanisms of GaN vertical power FinFETs.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5092433.

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                    Xiao, Ming, Gao, Xiang, Palacios, Tomás, & Zhang, Yuhao. Leakage and breakdown mechanisms of GaN vertical power FinFETs.  United States.  https://doi.org/10.1063/1.5092433

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                    Xiao, Ming, Gao, Xiang, Palacios, Tomás, and Zhang, Yuhao. Mon .  
"Leakage and breakdown mechanisms of GaN vertical power FinFETs".  United States.  https://doi.org/10.1063/1.5092433.

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@article{osti_1508681,

  title        = {Leakage and breakdown mechanisms of GaN vertical power FinFETs},

  author       = {Xiao, Ming and Gao, Xiang and Palacios, Tomás and Zhang, Yuhao},

  abstractNote = {},

  doi          = {10.1063/1.5092433},

  journal      = {Applied Physics Letters},

  number       = 16,

  volume       = 114,

  place        = {United States},

  year         = {Mon Apr 22 00:00:00 EDT 2019},

  month        = {Mon Apr 22 00:00:00 EDT 2019}

}

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Works referenced in this record:

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Title: Leakage and breakdown mechanisms of GaN vertical power FinFETs

Citation Formats

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors journal, July 2013

880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates journal, June 2018

Impacts of fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs conference, December 2014

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates journal, April 2017

Space-Charge-Limited Currents in Solids journal, March 1955

A 4.5 μ m PIN diamond diode for detecting slow neutrons journal, September 2018

1200 V GaN vertical fin power field-effect transistors conference, December 2017

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices conference, December 2017

The 2018 GaN power electronics roadmap journal, March 2018

FinFET scaling to 10 nm gate length conference, January 2002

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs journal, August 2015

Comprehensive study of a 4H–SiC MES–MOSFET journal, November 2015

Trench formation and corner rounding in vertical GaN power devices journal, May 2017

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates journal, September 2014

1.7 kV/1.0 mΩcm 2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure conference, December 2016

Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings conference, December 2016

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes journal, July 2015

Design space and origin of off-state leakage in GaN vertical power diodes conference, December 2015

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices journal, August 2012

Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV journal, June 2018

Analysis of the reverse I-V characteristics of diamond-based PIN diodes journal, July 2017

Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate conference, June 2016

Breakdown mechanism in 1 kA/cm 2 and 960 V E-mode β -Ga 2 O 3 vertical transistors journal, September 2018

Gallium nitride vertical power devices on foreign substrates: a review and outlook journal, June 2018

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit journal, January 2018

Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits journal, July 2012

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors journal, July 2013

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
journal, July 2013

880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates
journal, June 2018

Impacts of fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs
conference, December 2014

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
journal, April 2017

Space-Charge-Limited Currents in Solids
journal, March 1955

A 4.5 $μ$ m PIN diamond diode for detecting slow neutrons
journal, September 2018

1200 V GaN vertical fin power field-effect transistors
conference, December 2017

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
conference, December 2017

The 2018 GaN power electronics roadmap
journal, March 2018

FinFET scaling to 10 nm gate length
conference, January 2002

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs
journal, August 2015

Comprehensive study of a 4H–SiC MES–MOSFET
journal, November 2015

Trench formation and corner rounding in vertical GaN power devices
journal, May 2017

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates
journal, September 2014

1.7 kV/1.0 mΩcm 2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
conference, December 2016

Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
conference, December 2016

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
journal, July 2015

Design space and origin of off-state leakage in GaN vertical power diodes
conference, December 2015

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
journal, August 2012

Enhancement-Mode Ga ₂ O ₃ Vertical Transistors With Breakdown Voltage >1 kV
journal, June 2018

Analysis of the reverse I-V characteristics of diamond-based PIN diodes
journal, July 2017

Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate
conference, June 2016

Breakdown mechanism in 1 kA/cm ² and 960 V E-mode β -Ga ₂ O ₃ vertical transistors
journal, September 2018

Gallium nitride vertical power devices on foreign substrates: a review and outlook
journal, June 2018

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit
journal, January 2018

Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits
journal, July 2012

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
journal, July 2013