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Title: Leakage and breakdown mechanisms of GaN vertical power FinFETs

Authors:
 [1];  [2];  [3]; ORCiD logo [1]
  1. Center for Power Electronics Systems, The Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA
  2. IQE RF LLC, Somerset, New Jersey 08873, USA
  3. Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1508681
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 114 Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Xiao, Ming, Gao, Xiang, Palacios, Tomás, and Zhang, Yuhao. Leakage and breakdown mechanisms of GaN vertical power FinFETs. United States: N. p., 2019. Web. doi:10.1063/1.5092433.
Xiao, Ming, Gao, Xiang, Palacios, Tomás, & Zhang, Yuhao. Leakage and breakdown mechanisms of GaN vertical power FinFETs. United States. doi:10.1063/1.5092433.
Xiao, Ming, Gao, Xiang, Palacios, Tomás, and Zhang, Yuhao. Mon . "Leakage and breakdown mechanisms of GaN vertical power FinFETs". United States. doi:10.1063/1.5092433.
@article{osti_1508681,
title = {Leakage and breakdown mechanisms of GaN vertical power FinFETs},
author = {Xiao, Ming and Gao, Xiang and Palacios, Tomás and Zhang, Yuhao},
abstractNote = {},
doi = {10.1063/1.5092433},
journal = {Applied Physics Letters},
number = 16,
volume = 114,
place = {United States},
year = {2019},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5092433

Citation Metrics:
Cited by: 5 works
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