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Title: Low Contact Barrier in 2H/1T' MoTe 2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Abstract

Metal–semiconductor contact has been an important topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. Here, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe 2) planarly contacted by its metallic phase (1T' MoTe 2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe 2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation reflects a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2];  [1]; ORCiD logo [1];  [3]; ORCiD logo [1];  [4];  [1];  [1];  [1]; ORCiD logo [5]; ORCiD logo [6];  [2];  [1]; ORCiD logo [1]; ORCiD logo [3];  [3];  [1]
  1. Rice Univ., Houston, TX (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Northrop Grumman Corp., Redondo Beach, CA (United States)
  4. Rice Univ., Houston, TX (United States); Indian Inst. of Technology Kharagpur, West Bengal (India)
  5. Rice Univ., Houston, TX (United States); Univ. Szeged, Szeged (Hungary)
  6. Rice Univ., Houston, TX (United States); Univ. of Cambridge, Cambridge (United Kingdom)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1507842
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 11; Journal Issue: 13; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; chemical vapor deposition; contact resistance; in-plane heterostructure; metal−semiconductor junction; MoTe2; two-dimensional materials

Citation Formats

Zhang, Xiang, Jin, Zehua, Wang, Luqing, Hachtel, Jordan A., Villarreal, Eduardo, Wang, Zixing, Ha, Teresa, Nakanishi, Yusuke, Tiwary, Chandra Sekhar, Lai, Jiawei, Dong, Liangliang, Yang, Jihui, Vajtai, Robert, Ringe, Emilie, Idrobo, Juan Carlos, Yakobson, Boris I., Lou, Jun, Gambin, Vincent, Koltun, Rachel, and Ajayan, Pulickel M.. Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition. United States: N. p., 2019. Web. doi:10.1021/acsami.9b00306.
Zhang, Xiang, Jin, Zehua, Wang, Luqing, Hachtel, Jordan A., Villarreal, Eduardo, Wang, Zixing, Ha, Teresa, Nakanishi, Yusuke, Tiwary, Chandra Sekhar, Lai, Jiawei, Dong, Liangliang, Yang, Jihui, Vajtai, Robert, Ringe, Emilie, Idrobo, Juan Carlos, Yakobson, Boris I., Lou, Jun, Gambin, Vincent, Koltun, Rachel, & Ajayan, Pulickel M.. Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition. United States. doi:10.1021/acsami.9b00306.
Zhang, Xiang, Jin, Zehua, Wang, Luqing, Hachtel, Jordan A., Villarreal, Eduardo, Wang, Zixing, Ha, Teresa, Nakanishi, Yusuke, Tiwary, Chandra Sekhar, Lai, Jiawei, Dong, Liangliang, Yang, Jihui, Vajtai, Robert, Ringe, Emilie, Idrobo, Juan Carlos, Yakobson, Boris I., Lou, Jun, Gambin, Vincent, Koltun, Rachel, and Ajayan, Pulickel M.. Mon . "Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition". United States. doi:10.1021/acsami.9b00306.
@article{osti_1507842,
title = {Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition},
author = {Zhang, Xiang and Jin, Zehua and Wang, Luqing and Hachtel, Jordan A. and Villarreal, Eduardo and Wang, Zixing and Ha, Teresa and Nakanishi, Yusuke and Tiwary, Chandra Sekhar and Lai, Jiawei and Dong, Liangliang and Yang, Jihui and Vajtai, Robert and Ringe, Emilie and Idrobo, Juan Carlos and Yakobson, Boris I. and Lou, Jun and Gambin, Vincent and Koltun, Rachel and Ajayan, Pulickel M.},
abstractNote = {Metal–semiconductor contact has been an important topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. Here, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T' MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation reflects a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.},
doi = {10.1021/acsami.9b00306},
journal = {ACS Applied Materials and Interfaces},
number = 13,
volume = 11,
place = {United States},
year = {2019},
month = {3}
}

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