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Title: Modeling and Analysis of Gallium Oxide Vertical Transistors

Abstract

Gallium oxide (Ga 2O 3) based semiconductor devices are expected to disrupt power electronic applications in the near future. Due to the wide bandgap of Ga 2O 3, it should be possible to fabricate power devices with higher breakdown voltages and lower on-state resistances compared to incumbent Silicon (Si) and Silicon Carbide (SiC) technologies. In particular, vertical metal-oxide field effect transistor (MOSFETs) and vertical Fin Field Effect Transistor (FinFETs) devices based on Ga 2O 3 have been recently reported. Here, we present a comparative modelling study of such vertical Ga 2O 3 power transistors using use Technology Computer Aided Design (TCAD) and analyze their electro-thermal performance under static and dynamic operating conditions. We find that the MOSFETs show a trade-off between the current gains and threshold voltages, as a function of device geometry and acceptor concentrations in the body region. In contrast, in the FinFETs structures it is possible to achieve normally-off operation by proper design of the fin width and its donor concentration, without p-type doping. Overall, the modeling and analysis results presented here can be used as a guide for experimental improvement of the vertical Ga 2O 3 device performance for future power electronic applications.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3]; ORCiD logo [1]; ORCiD logo [2]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States). Transportation and Hydrogen Systems Center
  2. National Renewable Energy Laboratory (NREL), Golden, CO (United States). Materials Science Center
  3. National Renewable Energy Laboratory (NREL), Golden, CO (United States). Power System Engineering Center
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1507618
Alternate Identifier(s):
OSTI ID: 1509976
Report Number(s):
NREL/JA-5K00-73523
Journal ID: ISSN 2162-8769
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Published Article
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 8; Journal Issue: 7; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Ga2O3; vertical transistor; TCAD modeling; electron devices; semiconductors

Citation Formats

Kotecha, Ramchandra M., Metzger, Wyatt K., Mather, Barry A., Narumanchi, Sreekant V., and Zakutayev, Andriy A. Modeling and Analysis of Gallium Oxide Vertical Transistors. United States: N. p., 2019. Web. doi:10.1149/2.0401907jss.
Kotecha, Ramchandra M., Metzger, Wyatt K., Mather, Barry A., Narumanchi, Sreekant V., & Zakutayev, Andriy A. Modeling and Analysis of Gallium Oxide Vertical Transistors. United States. doi:10.1149/2.0401907jss.
Kotecha, Ramchandra M., Metzger, Wyatt K., Mather, Barry A., Narumanchi, Sreekant V., and Zakutayev, Andriy A. Thu . "Modeling and Analysis of Gallium Oxide Vertical Transistors". United States. doi:10.1149/2.0401907jss.
@article{osti_1507618,
title = {Modeling and Analysis of Gallium Oxide Vertical Transistors},
author = {Kotecha, Ramchandra M. and Metzger, Wyatt K. and Mather, Barry A. and Narumanchi, Sreekant V. and Zakutayev, Andriy A.},
abstractNote = {Gallium oxide (Ga2O3) based semiconductor devices are expected to disrupt power electronic applications in the near future. Due to the wide bandgap of Ga2O3, it should be possible to fabricate power devices with higher breakdown voltages and lower on-state resistances compared to incumbent Silicon (Si) and Silicon Carbide (SiC) technologies. In particular, vertical metal-oxide field effect transistor (MOSFETs) and vertical Fin Field Effect Transistor (FinFETs) devices based on Ga2O3 have been recently reported. Here, we present a comparative modelling study of such vertical Ga2O3 power transistors using use Technology Computer Aided Design (TCAD) and analyze their electro-thermal performance under static and dynamic operating conditions. We find that the MOSFETs show a trade-off between the current gains and threshold voltages, as a function of device geometry and acceptor concentrations in the body region. In contrast, in the FinFETs structures it is possible to achieve normally-off operation by proper design of the fin width and its donor concentration, without p-type doping. Overall, the modeling and analysis results presented here can be used as a guide for experimental improvement of the vertical Ga2O3 device performance for future power electronic applications.},
doi = {10.1149/2.0401907jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 7,
volume = 8,
place = {United States},
year = {2019},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1149/2.0401907jss

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