Benchmarking Gate Fidelities in a Two-Qubit Device
Abstract
We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Z gate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.
- Authors:
- Publication Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1507615
- Alternate Identifier(s):
- OSTI ID: 1609468
- Grant/Contract Number:
- FG02-03ER46028
- Resource Type:
- Published Article
- Journal Name:
- Physical Review. X
- Additional Journal Information:
- Journal Name: Physical Review. X Journal Volume: 9 Journal Issue: 2; Journal ID: ISSN 2160-3308
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Physics; Quantum benchmarking; Quantum gates; Quantum information with solid state qubits; Physical Systems; Double quantum dots; Electron spin resonance; Condensed Matter & Materials Physics; Quantum Information
Citation Formats
Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., and Vandersypen, L. M. K. Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device. United States: N. p., 2019.
Web. doi:10.1103/PhysRevX.9.021011.
Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., & Vandersypen, L. M. K. Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device. United States. doi:10.1103/PhysRevX.9.021011.
Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., and Vandersypen, L. M. K. Thu .
"Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device". United States. doi:10.1103/PhysRevX.9.021011.
@article{osti_1507615,
title = {Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device},
author = {Xue, X. and Watson, T. F. and Helsen, J. and Ward, D. R. and Savage, D. E. and Lagally, M. G. and Coppersmith, S. N. and Eriksson, M. A. and Wehner, S. and Vandersypen, L. M. K.},
abstractNote = {We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Z gate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.},
doi = {10.1103/PhysRevX.9.021011},
journal = {Physical Review. X},
number = 2,
volume = 9,
place = {United States},
year = {2019},
month = {4}
}
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DOI: 10.1103/PhysRevX.9.021011
DOI: 10.1103/PhysRevX.9.021011
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