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Title: Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1507615
Grant/Contract Number:  
FG02-03ER46028
Resource Type:
Published Article
Journal Name:
Physical Review X
Additional Journal Information:
Journal Name: Physical Review X Journal Volume: 9 Journal Issue: 2; Journal ID: ISSN 2160-3308
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., and Vandersypen, L. M. K. Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device. United States: N. p., 2019. Web. doi:10.1103/PhysRevX.9.021011.
Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., & Vandersypen, L. M. K. Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device. United States. doi:10.1103/PhysRevX.9.021011.
Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., and Vandersypen, L. M. K. Thu . "Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device". United States. doi:10.1103/PhysRevX.9.021011.
@article{osti_1507615,
title = {Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device},
author = {Xue, X. and Watson, T. F. and Helsen, J. and Ward, D. R. and Savage, D. E. and Lagally, M. G. and Coppersmith, S. N. and Eriksson, M. A. and Wehner, S. and Vandersypen, L. M. K.},
abstractNote = {},
doi = {10.1103/PhysRevX.9.021011},
journal = {Physical Review X},
number = 2,
volume = 9,
place = {United States},
year = {2019},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevX.9.021011

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Works referenced in this record:

Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
journal, April 2012

  • Shulman, M. D.; Dial, O. E.; Harvey, S. P.
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  • DOI: 10.1126/science.1217692

A two-qubit logic gate in silicon
journal, October 2015

  • Veldhorst, M.; Yang, C. H.; Hwang, J. C. C.
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  • DOI: 10.1038/nature15263