Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

doi:10.1103/PhysRevX.9.021011

Title: Benchmarking Gate Fidelities in a $Si / SiGe$ Two-Qubit Device

Authors:: Xue, X.; Watson, T. F.; Helsen, J.; Ward, D. R.; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.; Wehner, S.; Vandersypen, L. M. K.

Publication Date:: 2019-04-18

Sponsoring Org.:: USDOE

OSTI Identifier:: 1507615

Grant/Contract Number:: FG02-03ER46028

Resource Type:: Published Article

Journal Name:: Physical Review X

Additional Journal Information:: Journal Name: Physical Review X Journal Volume: 9 Journal Issue: 2; Journal ID: ISSN 2160-3308

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., and Vandersypen, L. M. K. Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device.  United States: N. p., 2019. 
        Web.  doi:10.1103/PhysRevX.9.021011.

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                    Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., & Vandersypen, L. M. K. Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device.  United States.  doi:10.1103/PhysRevX.9.021011.

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                    Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., and Vandersypen, L. M. K. Thu .  
        "Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device".  United States.  doi:10.1103/PhysRevX.9.021011.

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@article{osti_1507615,

  title        = {Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device},

  author       = {Xue, X. and Watson, T. F. and Helsen, J. and Ward, D. R. and Savage, D. E. and Lagally, M. G. and Coppersmith, S. N. and Eriksson, M. A. and Wehner, S. and Vandersypen, L. M. K.},

  abstractNote = {},

  doi          = {10.1103/PhysRevX.9.021011},

  journal      = {Physical Review X},

  number       = 2,

  volume       = 9,

  place        = {United States},

  year         = {2019},

  month        = {4}

}

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DOI: 10.1103/PhysRevX.9.021011

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Works referenced in this record:

Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
journal, April 2012

Shulman, M. D.; Dial, O. E.; Harvey, S. P.
Science, Vol. 336, Issue 6078, p. 202-205
DOI: 10.1126/science.1217692

A two-qubit logic gate in silicon
journal, October 2015

Veldhorst, M.; Yang, C. H.; Hwang, J. C. C.
Nature, Vol. 526, Issue 7573, p. 410-414
DOI: 10.1038/nature15263

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Title: Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

Citation Formats

Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits journal, April 2012

A two-qubit logic gate in silicon journal, October 2015

Title: Benchmarking Gate Fidelities in a $Si / SiGe$ Two-Qubit Device

Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
journal, April 2012

A two-qubit logic gate in silicon
journal, October 2015