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Title: The Effect of Gamma Radiation Exposure on Active Silicon Photonic Device Performance Metrics

Abstract

In this study, we test Si vertical junction disk modulators and waveguide-integrated Ge PIN photodiodes to see how the key performance metrics are affected by 60Co gamma radiation (total ionizing dose), a common proxy for simulating a mix of high energy ion particle flux. It is found that reverse bias dark current increases significantly for both devices after 1 Mrad(Si) exposure. Whereas the bandwidth of the Si disk modulator decreases by 6.5 % after 1 Mrad(Si) dose, the bandwidth of the Ge PIN photodiode appears to be unaffected. The increased sensitivity of the Si disk modulator bandwidth to gamma radiation is hypothesized to be caused by a decrease in the carrier concentration of the junction with a resulting increase in p-n junction RC time constant. The Ge PIN photodiode is relatively insensitive to the surface effects because the absorption happens away from the SiO2-Ge interface and the gamma radiation has a minimal effect on carrier mobility.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1507411
Report Number(s):
SAND-2019-3639J
Journal ID: ISSN 0018-9499; 674260
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Name: IEEE Transactions on Nuclear Science; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; electrooptic modulators; photodetectors; photodiodes; silicon photonics; integrated optoelectronics; integrated optics; gamma-ray effects; total ionizing dose; space radiation; optical fiber communication

Citation Formats

Hoffman, Galen B., Gehl, M., Martinez, N. J., Trotter, D. C., Starbuck, A. L., Pomerene, A., Dallo, C. M., Hood, D., Dodd, P. E., Swanson, S. E., Long, C. M., DeRose, C. T., and Lentine, A. L. The Effect of Gamma Radiation Exposure on Active Silicon Photonic Device Performance Metrics. United States: N. p., 2019. Web. doi:10.1109/TNS.2019.2907582.
Hoffman, Galen B., Gehl, M., Martinez, N. J., Trotter, D. C., Starbuck, A. L., Pomerene, A., Dallo, C. M., Hood, D., Dodd, P. E., Swanson, S. E., Long, C. M., DeRose, C. T., & Lentine, A. L. The Effect of Gamma Radiation Exposure on Active Silicon Photonic Device Performance Metrics. United States. doi:10.1109/TNS.2019.2907582.
Hoffman, Galen B., Gehl, M., Martinez, N. J., Trotter, D. C., Starbuck, A. L., Pomerene, A., Dallo, C. M., Hood, D., Dodd, P. E., Swanson, S. E., Long, C. M., DeRose, C. T., and Lentine, A. L. Tue . "The Effect of Gamma Radiation Exposure on Active Silicon Photonic Device Performance Metrics". United States. doi:10.1109/TNS.2019.2907582.
@article{osti_1507411,
title = {The Effect of Gamma Radiation Exposure on Active Silicon Photonic Device Performance Metrics},
author = {Hoffman, Galen B. and Gehl, M. and Martinez, N. J. and Trotter, D. C. and Starbuck, A. L. and Pomerene, A. and Dallo, C. M. and Hood, D. and Dodd, P. E. and Swanson, S. E. and Long, C. M. and DeRose, C. T. and Lentine, A. L.},
abstractNote = {In this study, we test Si vertical junction disk modulators and waveguide-integrated Ge PIN photodiodes to see how the key performance metrics are affected by 60Co gamma radiation (total ionizing dose), a common proxy for simulating a mix of high energy ion particle flux. It is found that reverse bias dark current increases significantly for both devices after 1 Mrad(Si) exposure. Whereas the bandwidth of the Si disk modulator decreases by 6.5 % after 1 Mrad(Si) dose, the bandwidth of the Ge PIN photodiode appears to be unaffected. The increased sensitivity of the Si disk modulator bandwidth to gamma radiation is hypothesized to be caused by a decrease in the carrier concentration of the junction with a resulting increase in p-n junction RC time constant. The Ge PIN photodiode is relatively insensitive to the surface effects because the absorption happens away from the SiO2-Ge interface and the gamma radiation has a minimal effect on carrier mobility.},
doi = {10.1109/TNS.2019.2907582},
journal = {IEEE Transactions on Nuclear Science},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {3}
}

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This content will become publicly available on March 26, 2020
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